IPD50N06S4L08ATMA2 INFINEON 英飞凌芯片 中文版规格书.pdf
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IPD50N06S4L-08
OptiMOS
®
-T2 Power-Transistor
Features
• N-channel - Enhancement mode
• AEC Q101 qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green Product (RoHS compliant)
• 100% Avalanche tested
Maximum ratings, at T
j
=25 °C, unless otherwise specified
Parameter Symbol Conditions Unit
Continuous drain current
1)
I
D
T
C
=25°C, V
GS
=10V
50 A
T
C
=100°C, V
GS
=10V
2)
47
Pulsed drain current
2)
I
D,pulse
T
C
=25°C
200
Avalanche energy, single pulse
2)
E
AS
I
D
=25A
87 mJ
Avalanche current, single pulse
I
AS
-
50 A
Gate source voltage
V
GS
- ±16 V
Power dissipation
P
tot
T
C
=25°C
71 W
Operating and storage temperature
T
j
, T
stg
- -55 ... +175 °C
IEC climatic category; DIN IEC 68-1 - - 55/175/56
−
Value
V
DS
60 V
R
DS(on),max
7.8
mΩ
I
D
50 A
Product Summary
PG-TO252-3-11
Type Package Marking
IPD50N06S4L-08 PG-TO252-3-11 4N06L08
Rev. 1.0 page 1 2009-03-24
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