IPD50N06S2-14
OptiMOS
®
Power-Transistor
Features
• N-channel - Enhancement mode
• Automotive AEC Q101 qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green package (lead free)
• Ultra low Rds(on)
• 100% Avalanche tested
Maximum ratings, at T
j
=25 °C, unless otherwise specified
Parameter Symbol Conditions Unit
Continuous drain current
I
D
T
C
=25 °C, V
GS
=10 V
50
1)
A
T
C
=100 °C,
V
GS
=10 V
2)
49
Pulsed drain current
2)
I
D,pulse
T
C
=25 °C
200
Avalanche energy, single pulse
E
AS
I
D
=50A
240 mJ
Gate source voltage
V
GS
±20 V
Power dissipation
P
tot
T
C
=25 °C
136 W
Operating and storage temperature
T
j
, T
stg
-55 ... +175 °C
IEC climatic category; DIN IEC 68-1 55/175/56
Value
V
DS
55 V
R
DS(on),max
(SMD version) 14.4
mΩ
I
D
50 A
Product Summary
PG-TO252-3-11
Type Package Marking
IPD50N06S2-14 PG-TO252-3-11 PN0614
Rev. 1.1 page 1 2008-10-21