SPP80P06PBKSA1 INFINEON 英飞凌 电子元器件芯片.pdf
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1999-11-22
Page 1
SPP80P06P
SPB80P06P
Preliminary data
SIPMOS
Power-Transistor
Features
·
P-Channel
·
Enhancement mode
·
Avalanche rated
·
d
v
/d
t
rated
·
175°C operating temperature
Product Summary
Drain source voltage V
V
DS
-60
Drain-source on-state resistance
R
DS(on)
0.023
W
Continuous drain current A
I
D
-80
Type Package Ordering Code
SPP80P06P P-TO220-3-1 Q67042-S4017
SPB80P06P P-TO263-3-2 Q67042-S4016
Pin 1 PIN 2/4 PIN 3
G D S
Maximum Ratings,at
T
j
= 25 °C, unless otherwise specified
Parameter Symbol UnitValue
-80
-64
Continuous drain current
T
C =
25 °C,
1)
T
C
= 100 °C
A
I
D
Pulsed drain current
T
C
= 25 °C
I
D puls
-320
Avalanche energy, single pulse
I
D
= -80 A ,
V
DD
= -25 V,
R
GS
= 25
W
823 mJ
E
AS
Avalanche energy, periodic limited by
T
jmax
E
AR
34
d
v
/d
t
6Reverse diode d
v
/d
t
I
S
= -80 A,
V
DS
= -48 , d
i
/d
t
= 200 A/µs,
T
jmax
= 175 °C
kV/µs
Gate source voltage
V
GS
±20 V
Power dissipation
T
C
= 25 °C
P
tot
340 W
Operating and storage temperature
T
j
,
T
stg
-55...+175 °C
IEC climatic category; DIN IEC 68-1 55/175/56
1
Current limited by bondwire; with an
R
thJC
= 0.4 K/W the chip is able to carry
I
D
= -91A
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