SPP15P10PL H INFINEON 英飞凌芯片 中文版规格书手册.pdf
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SPP15P10PLH
SIPMOS
®
Power-Transistor
Features
• P-Channel
• Enhancement mode
• logic level
• Avalanche rated
• Pb-free lead plating; RoHS compliant
Maximum ratings, at T
j
=25 °C, unless otherwise specified
Parameter Symbol Conditions Unit
Continuous drain current
I
D
T
C
=25 °C
A
T
C
=100 °C
Pulsed drain current
I
D,pulse
T
C
=25 °C
Avalanche energy, single pulse
E
AS
I
D
=-15 A, R
GS
=25 :
mJ
Gate source voltage
V
GS
V
Power dissipation
P
tot
T
C
=25 °C
W
Operating and storage temperature
T
j
, T
stg
°C
ESD Class
Soldering temperature
IEC climatic category; DIN IEC 68-1
-15
11.3
128
Value
230
-60
55/175/56
-55 ... 175
±20
260 °C
1C (1kV to 2kV)
V
DS
-100 V
R
DS(on),max
0.20
:
I
D
-15 A
Product Summary
Type Package Marking Lead free Packing
SPP15P10PL H PG-TO220-3 15P10PL Yes Non dry
Rev 1.4 page 12011-09-01
PG-TO220-3
° Halogen-free according to IEC61249-2-21
° Qualified according to AEC Q101
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