5
TS5MP645
www.ti.com.cn
ZHCSHH3B –JANUARY 2018 –REVISED JULY 2018
版权 © 2018, Texas Instruments Incorporated
(1) Stresses beyond those listed under Absolute Maximum Rating may cause permanent damage to the device. These are stress ratings
only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended
Operating Condition. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) All voltage are with respect to ground, unless otherwise specified
6 Specifications
6.1 Absolute Maximum Ratings
Over operating free-air temperature range (unless otherwise noted)
(1) (2)
MIN MAX UNIT
V
DD
Supply Voltage -0.5 6 V
V
I/O
Analog voltage range (DxN, CLKN, DxP, CLKP, DAxN, CLKAN, DAxP, CLKAP, DBxN,
CLKBN, DBxP, CLKBP)
-0.5 4 V
V
SEL
, V
OE
Digital Input Voltage (SEL, OE) -0.5 6 V
T
J
Junction temperature -65 150 °C
T
stg
Storage temperature -65 150 °C
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
6.2 ESD Ratings
VALUE UNIT
V
(ESD)
Electrostatic discharge
Human body model (HBM), per
ANSI/ESDA/JEDEC JS-001, all pins
(1)
±2000
V
Charged device model (CDM), per JEDEC
specification JESD22-C101, all pins
(2)
±250
6.3 Recommended Operating Conditions
Over operating free-air temperature range (unless otherwise noted)
MIN NOM MAX UNIT
V
DD
Supply Voltage 1.65 5.5 V
V
I/O
Analog voltage range (DxN, CLKN, DxP, CLKP, DAxN, CLKAN, DAxP,
CLKAP, DBxN, CLKBN, DBxP, CLKBP)
0 3.6 V
V
SEL
, V
OE
Digital Input Voltage (SEL, OE) 0 5.5 V
I
I/O
Continuous I/O current -35 35 mA
T
A
Operating ambient temperature -40 85 °C
T
J
Junction temperature -65 150 °C
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report.
6.4 Thermal Information
THERMAL METRIC
(1)
TS5MP645
UNITYFP
36
R
θJA
Junction-to-ambient thermal resistance 57.6 °C/W
R
θJC(top)
Junction-to-case (top) thermal resistance 0.3 ° C/W
R
θJB
Junction-to-board thermal resistance 12.6 °C/W
Ψ
JT
Junction-to-top characterization parameter 0.2 ° C/W
Ψ
JB
Junction-to-board characterization parameter 12.7 °C/W