TI-TS5N118.pdf资源-CSDN文库

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www.ti.com

FEATURES APPLICATIONS

GND

DBQ OR PW PACKAGE

(TOP VIEW)

NC − No internal connection

DESCRIPTION/ORDERING INFORMATION

TS5N118

1-OF-8 FET MULTIPLEXER/DEMULTIPLEXER

HIGH-BANDWIDTH BUS SWITCH

SCDS205 – AUGUST 2005

• PCI Interface

• Low and Flat ON-State Resistance (r

)

Characteristics Over Operating Range

• Differential Signal Interface

= 3 Ω Typ)

• Memory Interleaving

• 0- to 10-V Switching on Data I/O Ports

• Bus Isolation

• Low-Distortion Signal Gating

• Bidirectional Data Flow With Near-Zero

Propagation Delay

• Low Input/Output Capacitance Minimizes

Loading and Signal Distortion

io(OFF)

= 20 pF Max, B Port)

• V

Operating Range From 4.75 V to 5.25 V

• Latch-Up Performance Exceeds 100 mA Per

JESD 78, Class II

• ESD Performance Tested Per JESD 22

– 2000-V Human-Body Model

(A114-B, Class II)

– 1000-V Charged-Device Model (C101)

• Supports Both Digital and Analog

Applications

The TS5N118 is a high-bandwidth FET bus switch utilizing a charge pump to elevate the gate voltage of the pass

transistor, providing a low and flat ON-state resistance (r

). The low and flat ON-state resistance allows for

minimal propagation delay and supports rail-to-rail switching on the data input/output (I/O) ports. The device also

features low data I/O capacitance to minimize capacitive loading and signal distortion on the data bus.

Specifically designed to support high-bandwidth applications, the TS5N118 provides an optimized interface

solution ideally suited for broadband communications, networking, and data-intensive computing systems.

The TS5N118 is a 1-of-8 multiplexer/demultiplexer with a single output-enable ( OE) input. The select (S0, S1,

S2) inputs control the data path of the multiplexer/demultiplexer. When OE is low, the multiplexer/demultiplexer is

enabled and the A port is connected to the B port, allowing bidirectional data flow between ports. When OE is

high, the multiplexer/demultiplexer is disabled and a high-impedance state exists between the A and B ports.

This device is fully specified for partial-power-down applications using I

off

. The I

off

circuitry prevents damaging

current backflow through the device when it is powered down. The device has isolation during power off.

To ensure the high-impedance state during power up or power down, OE should be tied to V

through a pullup

resistor; the minimum value of the resistor is determined by the current-sinking capability of the driver.

ORDERING INFORMATION

PACKAGE

(1)

ORDERABLE PART NUMBER TOP-SIDE MARKING

SSOP (QSOP) – DBQ Tape and reel TS5N118DBQR

–40 ° C to 85 ° C YB118

TSSOP – PW Tape and reel TS5N118PWR

(1) Package drawings, standard packing quantities, thermal data, symbolization, and PCB design guidelines are available at

www.ti.com/sc/package.

Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas

Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.

PRODUCTION DATA information is current as of publication date.

Products conform to specifications per the terms of the Texas

Instruments standard warranty. Production processing does not

necessarily include testing of all parameters.

www.ti.com

Electrical Characteristics

(1)

Switching Characteristics

Dynamic Characteristics

TS5N118

1-OF-8 FET MULTIPLEXER/DEMULTIPLEXER

HIGH-BANDWIDTH BUS SWITCH

SCDS205 – AUGUST 2005

over recommended operating free-air temperature range (unless otherwise noted)

PARAMETER TEST CONDITIONS MIN TYP

(2)

MAX UNIT

Control inputs V

= 5.25 V, V

= 0 to V

10 µ A

= 0 to 10 V, Switch OFF, 10

= 5.25 V,

= 0, V

= V

or GND

(3)

µ A

= 0 V, V

= Open, V

= 0 to 10 V 10

I/O

= 0, 10

= 5.25 V, V

= V

or GND mA

Switch ON or OFF,

Control inputs V

= 5 V, V

= 10 V or 0 10 pF

Switch OFF, 120

A port V

= 5 V, V

I/O

= 10 V or 0

= V

or GND,

io(OFF)

Switch OFF, 20

B port V

= 5 V, V

I/O

= 10 V or 0

= V

or GND,

Switch ON, 160

io(ON)

= 5 V, V

I/O

= 10 V or 0 pF

= V

or GND,

= 0, I

= 50 mA 3 7.5

= 4.75 V,

(4)

= 8 V, I

= –50 mA 7.5 Ω

TYP at V

= 5 V

= 10 V, I

= –50 mA 12.5

(1) V

and I

refer to control inputs. V

, V

, I

, and I

refer to data pins

(2) All typical values are at V

= 5 V (unless otherwise noted), T

= 25 ° C.

(3) For I/O ports, the parameter I

includes the I/O leakage current.

(4) Measured by the voltage drop between the A and B terminals at the indicated current through the switch. ON-state resistance is

determined by the lower of the voltages of the two (A or B) terminals.

over recommended operating free-air temperature range (unless otherwise noted) (see Figure 3 )

= 5 V

FROM TO

± 0.25 V

PARAMETER UNIT

(INPUT) (OUTPUT)

MIN MAX

(1)

A or B B or A 0.1 ns

pd(s)

S A 200 ns

S B 200

OE A or B 200

S B 200

dis

OE A or B 200

(1) The propagation delay is the calculated RC time constant of the typical ON-state resistance of the switch and the specified load

capacitance, when driven by an ideal voltage source (zero output impedance).

over recommended operating free-air temperature range, V

= 5 V ± 5% (unless otherwise noted)

PARAMETER TEST CONDITIONS MIN TYP

(1)

MAX UNIT

Bandwidth (BW)

(2)

= 50 Ω , V

= 0.632 V (P-P), See Figure 4 25 MHz

OFF isolation (O

ISO

) R

= 50 Ω , V

= 0.632 V (P-P), f = 25 MHz, See Figure 5 –50 dB

Crosstalk (X

TALK

) R

= 50 Ω , V

= 0.632 V (P-P), f = 25 MHz, See Figure 6 –50 dB

(1) All typical values are at V

= 5 V (unless otherwise noted), T

= 25 ° C.

(2) Bandwidth is the frequency at which the gain is –3 dB below the DC gain.

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