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4.7PF

4.7uH

OUTP

2.5V to 4.8V

4.7PF

POS

4.6V/250mA

PGND

NEG

-4.9V/250mA

GND

4.7PF

100nF

VIN

SWP

TPS65137AS

CTRL

4.7PH

SWN

OUTN

EN and

Program V

NEG

4.7PF

TPS65137AS

www.ti.com.cn

ZHCSBI8B –AUGUST 2011–REVISED SEPTEMBER 2013

250mA 双双路路输输出出有有源源矩矩阵阵有有机机发发光光二二极极管管 (AMOLED) 显显示示屏屏电电源源

查查询询样样品品: TPS65137AS

特特性性

说说明明

• 2.5V 至至 4.8V 输输入入电电压压范范围围

TPS65137AS 被设计用于驱动需要正负电压电源轨的

AMOLED 显示屏（有源矩阵有机发光二极管）。此器

• 0.8% 输输出出电电压压精精度度 V

正正向向

件集成了一个具有低压降 (LDO) 后置稳压器的升压转

• 出出色色的的线线路路瞬瞬态态稳稳压压

换器和一个适合于电池供电类产品的反相降压-升压转

• 250mA 输输出出电电流流

换器。数字控制引脚 (CTRL) 允许用数字步进设定负

• 固固定定 4.6V V

正正向向

输输出出电电压压

输出电压。 TPS65137AS 使用一个可实现出色线路和

• 数数字字可可编编程程 V

负负向向

，，-2.2V 至至 -5.2V

负载稳压的全新技术。需要使用此技术来避免手机发

• V

负负向向

的的缺缺省省值值为为 -4.9V

送阶段产生的输入电压干扰对 AMOLED 显示屏造成的

• 短短路路保保护护

影响。

• 热热关关断断

• 3mm × 3mm 10 引引脚脚四四方方扁扁平平无无引引线线 (QFN) 封封装装

应应用用范范围围

• 有有源源矩矩阵阵 OLED

典典型型应应用用

Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of

Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.

PRODUCTION DATA information is current as of publication date.

Products conform to specifications per the terms of the Texas

Instruments standard warranty. Production processing does not English Data Sheet: SLVSB21

necessarily include testing of all parameters.

TPS65137AS

ZHCSBI8B –AUGUST 2011–REVISED SEPTEMBER 2013

www.ti.com.cn

This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with

appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.

ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more

susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.

ORDERING INFORMATION

(1) (2)

PACKAGE

(2)

ORDERABLE PART TOP-SIDE MARKING

NUMBER

–40°C to 85°C 10-Pin 3x3 QFN TPS65137ASDSCR PPGC

(1) For the most current package and ordering information, see the Package Option Addendum at the end of this document, or see the TI

web site at www.ti.com.

(2) Package drawings, thermal data, and symbolization are available at www.ti.com/packaging.

ABSOLUTE MAXIMUM RATINGS

over operating free-air temperature range (unless otherwise noted)

(1)

VALUE

UNIT

MIN MAX

PVIN, SWP, OUTP, CTRL, VL, CB 5.5 V

OUTN –6.5 V

Pin Voltage

(2)

SWN –6.5 5.5 V

CT 3.6 V

HBM 2 kV

ESD rating MM 200 V

CDM 500 V

Operating junction temperature range –40 50 °C

Operating ambient temperature range –40 85 °C

stg

Storage temperature range –65 150 °C

(1) Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings

only, and functional operation of the device at these or any other conditions beyond those indicated under recommended operating

conditions is not implied. Exposure to absolute–maximum–rated conditions for extended periods may affect device reliability.

(2) With respect to GND pin.

THERMAL INFORMATION

TPS65137AS

THERMAL METRIC

(1)

DSC UNITS

Junction-to-ambient thermal resistance 56.5

Junction-to-board thermal resistance 25.2

°C/W

Junction-to-top characterization parameter 1.0

Junction-to-board characterization parameter 17.9

(1) For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.

RECOMMENDED OPERATING CONDITIONS

MIN TYP MAX UNIT

Input supply voltage range 2.5 3.7 4.8 V

Operating ambient temperature –40 25 85 °C

Operating junction temperature –40 85 125 °C

TPS65137AS

www.ti.com.cn

ZHCSBI8B –AUGUST 2011–REVISED SEPTEMBER 2013

ELECTRICAL CHARACTERISTICS

= 3.7V, CTRL = V

, V

POS

= 4.6V, V

NEG

= –4.9V, T

= –40°C to 85°C, typical values are at T

= 25°C (unless otherwise

noted)

PARAMETER TEST CONDITIONS MIN TYP MAX UNIT

SUPPLY CURRENT AND THERMAL PROTECTION

Input voltage range 2.5 4.8 V

Operating quiescent current into V

POS

and V

NEG

have no load

(1)

16 mA

Shutdown current into V

CTRL = GND 0.1 μA

falling 2.0

UVLO

Under-voltage lockout threshold V

rising 2.3

Thermal shutdown 145 °C

OUTPUT V

POS

Positive output voltage regulation –0.8% 4.6 0.8% V

SWP MOSFET on-resistance I

SWP

= 200 mA 200 mΩ

DS(ON)

SWP MOSFET rectifier on-resistance I

SWP

= 200 mA 250 mΩ

SWP

SWP Switching frequency I

POS

= 0 mA 1.6 MHz

SWP

SWP switch current limit Inductor valley current 0.9 1.2 A

P(SCP)

Short circuit threshold in operation V

POS

falling 3.7 V

PLEAK

Leakage current into V

POS

CTRL = GND 2 5 µA

DROP

LDO drop out voltage I

POS

= 100 mA 400 mV

Line regulation I

POS

= 0 mA 0 %/V

Load regulation I

POS

= 0 to 250 mA 0.28 %/A

OUTPUT V

NEG

Negative output voltage default –4.9 V

Negative output voltage range –2.2 –5.2 V

Negative output voltage regulation –5.2 ≤ V

NEG

≤ –4.2 –1% 1%

–4.2 < V

NEG

≤ –2.2 –1.5% 1.5%

SWN MOSFET on-resistance I

SWN

= 200 mA 200

DS(ON)

mΩ

SWN MOSFET rectifier on-resistance I

SWN

= 200 mA 300

SWN

SWN switching frequency I

NEG

= 100 mA 1.7 MHz

SWN

SWN switch current limit V

= 2.9 V 1.2 2.2 A

N(SCP)

Short circuit threshold in operation Voltage drop from programmed V

NEG

420 mV

Short circuit threshold in start-up 0.18 0.21 0.24 V

N(SCP)

Short circuit detection time in start-up 10 ms

NLEAK

Leakage current out of V

NEG

CTRL = GND 2 5 µA

N(PD)

NEG

Pull down resistor before start up I

NEG

= 1 mA 300 Ω

Line regulation 0 %/V

Load regulation I

NEG

= 0 to 250 mA 0.28 %/A

CTRL INTERFACE

Logic high-level voltage 1.2 V

Logic low-level voltage 0.4 V

R Pull down resistor 150 400 860 kΩ

INIT

Initialization time 300 400 μs

OFF

Shutdown time period 30 80 μs

HIGH

Pulse high level time period 2 10 25 μs

low

Pulse low level time period 2 10 25 μs

STORE

Data storage/accept time period 30 80 μs

pin output impedance 150 325 500 kΩ

(1) With inductor DFE252012C 4.7 µH from TOKO

剩余20页未读，继续阅读

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