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NCV7430 汽车 LIN RGB LED 驱动器-综合文档
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NCV7430 汽车 LIN RGB LED 驱动器
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© Semiconductor Components Industries, LLC, 2015
June, 2017 − Rev. 10
1 Publication Order Number:
NCV7430/D
NCV7430
Automotive LIN RGB LED
Driver
The NCV7430 is a single−chip RGB driver intended for dedicated
multicolor LED applications. The RGB LED driver contains a LIN
interface (slave) for parametric programming of LED color and intensity.
The device receives instructions through the LIN bus and
subsequently drives the LEDs independently.
The NCV7430 acts as a slave on the LIN bus and the master can
request specific status information (parameter values and error flags).
The LIN address of the NCV7430 can be programmed in the internal
memory of the device.
The NCV7430 is fully compatible with automotive requirements.
PRODUCT FEATURES
LED Driver
• 3 Independent LED Current Regulators
• LED Currents Adjustable with External Resistors
• Power Dissipation Option with External Ballast Transistor
Controller with One−Time−Programmable Memory (OTP)
• LED Modulation Controller for 3 LEDs
• Full LED Calibration Support
♦ Internal LED Color Calibration via Matrix Calculation
♦ Intensity Control (linear or logarithmic)
♦ Dimming and Color Transition (linear) Function
with Programmable Transition Time
LIN Interface
• LIN Physical Layer according to LIN 2.1/ SAE J2602
• OTP−programmable Device Node Number
• OTP−programmable Group Address
• Diagnostics and Status Information
• LIN Bus Short Circuit Protection to Supply and Ground
Protection and Diagnostics
• Overcurrent Detection
• Short Circuit Detection to GND and VBB
• Open LED Detection
• High Temperature Warning and Shutdown
• Retry Mode on Error Detection
Power Saving
• Sleep Mode Supply Current 10 mA
• Compliant with 14 V Automotive Systems
EMI Compatibility
• LIN Bus Integrated Slope Control
• EMC Reduced LED Modulation Mode
Quality
• NCV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q100
Qualified and PPAP Capable
• These Devices are Pb−Free and are RoHS Compliant
MARKING
DIAGRAM
www.
onsemi.com
1
14
SOIC−14
D2 SUFFIX
CASE 751A
NCV7430−0
AWLYWWG
1
14
NCV7430 = Specific Device Code
A = Assembly Location
WL = Wafer Lot
Y = Year
WW = Work Week
G = Pb−Free Package
14
13
12
11
10
9
8
1
2
3
4
5
6
7
ANODE
VBIAS
VBB
LIN
GND
TST2
GND
LED3C
LED1C
LED2C
TST1
LED2R
LED1R
LED3R
PIN CONNECTIONS
NCV7430
Device Package Shipping
†
ORDERING INFORMATION
NCV7430D20G SOIC−14
(Pb−Free)
55 Units / Tube
NCV7430D20R2G SOIC−14
(Pb−Free)
3000 / Tape &
Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
NCV7430
www.onsemi.com
2
BLOCK DIAGRAM
Figure 1. Simple Block Diagram
modulator
325 mV
LIN
and
Optional Ballast Control
LED1C
LED2C
LED3C
ANODE
VBIAS
Error
LED3RLED2RLED1RGND
LIN
VBB
GND
LEDxC
LEDxR
325 mV325 mV
Detection
Communication
Programming
Figure 2. Detailed Block Diagram
BUS
Interface
Oscillator
Vref
Temp
sense
Voltage
Regulator
TST1
LIN
LED1C
LED1R
Main Control Processor,
Registers
OTP memory
NCV7430
ANODE ERROR
OPEN
LED1
LED2C
LED2R
Analog
Error
Handler
LED2
LED3
ANODE
VBIAS
LED3C
LED3R
VBB GNDGND
TST2
Current−reg−
−Fet
VRef
OPA
Vref1
D
Vref2
Modulator
ERROR
NCV7430
www.onsemi.com
3
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
NCV7430
GND
LIN
LIN bus
2
VBB
TST1
4
57
10 nF
VBAT
C2
C3
C1
100 nF
GND
14
12
ANODE
LED1C
11
13
LED3C
8
9
LED1R
Rsense
10 ohm for 30 mA
D1
1
470
VBIAS
LED2C
LED2R
LED3R
10
TST2
6
3
Optional
R1
Q1
Optional
123
MRA4003T3G
NJD2873T4G*
C4
1 nF
R
G
B
RGB
Figure 3. Typical Application with Ballast Transistor
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
NCV7430
GND
LIN
LIN bus
2
VBB
TST1
4
57
10 nF
VBAT
C2
C3
C1
100 nF
GND
14
12
ANODE
LED1C
11
13
LED3C
8
9
LED1R
Rsense
10 ohm for 30 mA
D1
1
LED2C
LED2R
LED3R
10
TST2
6
3
Optional
123
MRA4003T3G
VBIAS
R
G
B
RGB
Figure 4. Typical Application without Ballast Transistor
NOTES:
C
1
must be close to pins V
BB
and GND
C
2
and C
3
is placed for EMC reasons; value depends on EMC requirements of the application
R1 and Q1 and reverse polarity protection D1 and C2 are optional.
When Q1 is not used, connect VBB to the ANODE pin. VBIAS output is kept open in this case.
Rsense_1, Rsense_2 and Rsense_3 have to be calculated for LED current settings.
“R”, “G”, “B” designators refer to the ON Semiconductor evaluation board software associations.
* For lower power applications, a PZT3904T1G device can be substituted.
RGB LED, OSRAM MULTILED LRTB GVSG or DOMINANT Multi DomiLED D6RTB−PJG
Table 1. OPERATING RANGES
Parameter Min Max Unit
V
BB
Supply voltage +5.5 +18 V
T
J
Operating temperature range −40 +125 °C
NCV7430
www.onsemi.com
4
Table 2. PIN FUNCTION DESCRIPTION (14 LEAD SON Package)
Pin #
Label Pin Description
1 ANODE Anode input for LED fault detection
2 VBIAS Bias output for ballast transistor
3 VBB VBB (14 V) Supply Voltage
4 LIN LIN−bus connection
5 GND Supply GND
6 TST2 Test pin (ground pin)
7 GND Supply GND
8 LED3R Current program resistor to ground for LED3C
9 LED1R Current program resistor to ground for LED1C
10 LED2R Current program resistor to ground for LED2C
11 TST1 Test pin (float pin) (Note 1)
12 LED2C Channel 2 regulated current output to LED cathode
13 LED1C Channel 1 regulated current output to LED cathode
14 LED3C Channel 3 regulated current output to LED cathode
1. Floating pin 11 eliminates the possibility of a short to ground of the adjacent pin (LED2C).
Table 3. MAXIMUM RATINGS
Parameter Min Max Unit
V
BB
Supply voltage −0.3 +43 (Note 2) V
Supply voltage −0.3 28 (Note 3) V
Vlin Bus input voltage (LIN) −45 +45 V
VVBIAS Ballast Transistor Drive Voltage Pin (VBIAS) −0.3 VANODE V
IBIAS Ballast Output Drive (VBIAS) − 10 mA
VANODE LED Fault Sense Pin (ANODE) voltage −0.3 VBB V
VLEDC LED Current Pin (LEDxC) voltage (Note 7) −0.3 VBB V
VLEDR Program Current Pin (LEDxR) voltage (Note 4) −0.3 3.6 V
T
J
Junction temperature range (Note 5) −50 +175 °C
Tflw Peak Reflow Soldering Temperature: Pb−Free
60 to 150 seconds at 217°C (Note 6)
− 260 peak
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
2. For limited time: t < 0.5 s.
3. t < 3 minutes
4. VLEDR cannot exceed VLEDC.
5. The circuit functionality is not fully guaranteed outside operating temperature range.
6. For additional information, see or download ON Semiconductor’s Soldering and Mounting Techniques Reference Manual, SOLDERRM/D,
and Application Note AND8003/D.
7. Capacitive loading on LEDxC pins is limited to < 200 pF for proper functionality.
Table 4. ATTRIBUTES
Characteristics Value
ESD Capability Human Body Model (LIN Pin)
(Note 8) Human Body Model (All Remaining Pins)
Machine Model
> ± 4 kV
> ± 2 kV
> ± 200 V
Moisture Sensitivity Level (Note 6) MSL 2
Storage Temperature −55°C to 150°C
Package Thermal Resistance
Junction−to−Ambient (R
q
JA
) (2S2P) (Note 9)
Junction−to−Pin (R
y
JL
) (Pins 4 & 11)
100°K/W
53°K/W
Meets or exceeds JEDEC Spec EIA/JESD78 IC Latchup Test
8. HBM according to AEC−Q100: EIA−JESD22−A114−B (100 pF via 1.5 kW) and MM according to AEC−Q100: EIA−JESD22−A115−A.
9. Simulated conform JEDEC JESD51
NCV7430
www.onsemi.com
5
Table 5. ELECTRICAL CHARACTERISTICS (5.5 V < V
BB
< 18 V, −40°C < T
J
< 125°C, R
sense
= 10 W TWPROG = TWPROG2 =
0, unless otherwise specified).
Symbol
Pin(s) Characteristic Conditions Min Typ Max Unit
LED DRIVER
I
LEDmax
LED1C
LED2C
LED3C
Single LED current in nor-
mal operation
V
BB
= 14 V
For individual LED driven
− − 32 mA
I
LEDmaxTotal
All LED currents in normal
operation
V
BB
= 14 V
For all LEDs driven
− − 96 mA
I
LEDxC
LED current Uncalibrated Max ON Duty
Cycle
R
SENSE
= 10 W
R
SENSE
= 100 W
28
2.8
30.5
3.05
32
3.2
mA
I
MSabs
Absolute error on LED
current
Calibrated
V
BB
= 14 V,
3 mA < I
LEDxC
< 30 mA
R
SENSE
= 10 W
R
SENSE
= 100 W
−1
−3
−
−
1
3
%
V
Vref1
Reference voltage for cur-
rent regulators (High)
state
V
BB
= 14 V − 325 −
mV
V
Vref2
Reference voltage for cur-
rent regulators (Low) state
V
BB
= 14 V − 20 −
mV
LIN TRANSMITTER
I
bus_off
LIN
Dominant state, driver off V
linbus
= 0 V,
V
BB
= 8 V & 18 V
−1 − − mA
I
bus_off
Recessive state, driver off V
linbus
= V
bat
,
V
BB
= 8 V & 18 V
− − 20
mA
I
bus_lim
Current limitation V
BB
= 8 V & 18 V 40 75 200 mA
R
slave
Pull−up resistance V
BB
= 8 V & 18 V 20 30 47
kW
LIN RECEIVER
V
bus_dom
LIN
Receiver dominant state V
BB
= 8 V & 18 V 0 − 0.4 * V
BB
V
V
bus_rec
Receiver recessive state V
BB
= 8 V & 18 V 0.6 * V
BB
− V
BB
V
V
bus_hys
Receiver hysteresis V
BB
= 8 V & 18 V 0.05 * V
BB
− 0.175 * V
BB
V
Vrec_th_wake LIN wake−up threshold V
BB
= 8 V & 18 V V
BB
− 1.1 − V
BB
− 3.3 V
THERMAL WARNING & SHUTDOWN
T
tw
Thermal warning
(Notes 10, 11)
107 115 123 °C
T
twhyst
Thermal warning hyster-
esis
− 10 −
T
tsd
Thermal shutdown
(Note 10)
147 155 163 °C
THERMAL CONTROL
TH_Ired_step
LED Drive Current change
at Thermal Warning
−
−6.25
− %
per
step
VBIAS OUTPUT
V
bias
Output voltage
V
BB
= 14 V, I
bias
= 5 mA 7.3 − 8.3 V
VBB SUPPLY
VBB_UV
VBB Undervoltage
for LIN Communication
5.40 5.8 6.0 V
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
10.Parameter guaranteed by trimming in production test.
11. No more than 2000 cumulative hours in life time above Tw.
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