The quantum yield formula for the reflection-mode GaAs photocathode is revised by taking into account the influencing factors of active-layer thickness and interface recombination velocity. By using the revised quantum yield formula, the experimental quantum yield data of three different-structure reflection-mode GaAs photocathodes grown by molecular beam epitaxy are well fitted to compare the cathode performance parameters. The fitted results show that the GaAlAs buffer layer-based gradient-dop
