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Samsung Semiconductor, Inc.

Product Selection Guide

Memory and Storage

August 2007

DDR2 SDRAM REGISTERED MODULES

Parity

Density Org Speed (Mbps) Part Number Register Rank Composition Package

512MB 64Mx72 400/533/667 M393T6553EZA-C(CC/D5/E6) Y 1 (64M x8)*9 Lead-free

1GB 128Mx72 400/533 M393T2950EZ3-C(CC/D5) N 1 (128M x4)*18 Lead-free

1GB 128Mx72 400/533 M393T2953EZ3-C(CC/D5) N 2 (64M x8)*18 Lead-free

1GB 128Mx72 400/533/667 M393T2950EZA-C(CC/D5/E6) Y 1 (128M x4)*18 Lead-free

1GB 128Mx72 400/533/667 M393T2953EZA-C(CC/D5/E6) Y 2 (64M x8)*18 Lead-free

2GB 256Mx72 400/533 M393T5750EZ3-C(CC/D5) N 2 (128M x4)*36 Lead-free

2GB 256Mx72 400/533 M393T5660CZ3-C(CC/D5) N 1 (256M x4)*18 Lead-free

2GB 256Mx72 400/533 M393T5663CZ3-C(CC/D5) N 2 (128M x8)*18 Lead-free

2GB 256Mx72 400/533/667 M393T5750EZ3-C(CC/D5/E6) Y 2 (128M x4)*36 Lead-free

2GB 256Mx72 400/533/667 M393T5660CZA-C(CC/D5/E6) Y 1 (256M x4)*18 Lead-free

2GB 256Mx72 533/667 M393T5663CZA-C(D5/E6) Y 2 (128M x8)*18 Lead-free

4GB 512Mx72 400/533 M393T5160CZ0-C(CC/D5) N 2 st. (512M x4)*18 Lead-free

4GB 512Mx72 400/533/667 M393T5160CZA-C(CC/D5/E6) Y 2 st. (512M x4)*18 Lead-free

NOTES: CC=PC2-3200 (DDR2-400 @ CL=3) D5=PC2-4200 (DDR2-533 @ CL=4) E6=PC2-5300 (DDR2-667 @ CL=5) Voltage:1.8V Module Height=1.2"

DDR2 SDRAM FULLY BUFFERED MODULES

Density Org Speed (Mbps) Part Number Rank Composition Package

512MB 64Mx72 533 M395T6553EZ4-CD5(50/60/20) 1 (64M x8)*9 Lead-free

512MB 64Mx72 667 M395T6553EZ4-CE6(50/60/20) 1 (64M x8)*9 Lead-free

1GB 128Mx72 533 M395T2953EZ4-CD5(50/60/20) 2 (64M x8)*18 Lead-free

1GB 128Mx72 667 M395T2953EZ4-CE6(50/60/20) 2 Lead-free

2GB 256Mx72 533 M395T5750EZ4-CD5(50/60/20) 2 Lead-free

2GB 256Mx72 667 M395T5750EZ4-CE6(50/60/20) 2 (128M x4)*36 Lead-free

4GB 512Mx72 533 M395T5160CZ4-CD5(50/60/20) 2 st. (512M x4)*18 Lead-free

4GB 512Mx72 533 M395T5160CZ4-CE6(50/60/20) 2 st. (512M x4)*18 Lead-free

NOTES: 50=Intel AMB 60: IDT AMB Voltage for AMB:1.5V Voltage for DRAM:1.8V Module Height=1.2" 20: NEC AMB

MEMORY AND STORAGE

DDR3 / DDR2 SDRAM

SAMSUNG SEMICONDUCTOR, INC.

AUGUST 2007

BR-07-ALL-001

DDR3 SDRAM COMPONENTS

Package

Density Org Speed (Mbps) Part Number Package Dimension

1Gb 256M x4 800/1066/1333 K4B1G0446C-ZC(F7/F8/H9) 94ball FBGA 11x18mm

1Gb 128M x8 800/1066/1333 K4B1G0846C-ZC(F7/F8/H9) 94ball FBGA 11x18mm

1Gb 64M x16 800/1066/1333 K4B1G1646C-ZC(F7/F8/H9) 112ball FBGA 11x18mm

NOTES: E7=DDR3-800 (6-6-6) F8 = DDR3-1066 (7-7-7) G9=DDR3-1333 (9-9-9) Voltage: 1.5V

DDR3 SDRAM UNBUFFERED MODULES

Density Org Speed (Mbps) Part Number Rank Composition Package

512MB 64Mx64 800/1066/1333 M378B6474CZ0-C(F7/F8/H9) 1 1Gb(64M x16) * 4 RoHS

1GB 128Mx64 800/1066/1333 M378B2873CZ0-C(F7/F8/H9) 1 1Gb(128M x8) * 8 RoHS

2GB 256Mx64 800/1066/1333 M378B5673CZ0-C(F7/F8/H9) 2 1Gb(128M x8) * 16 RoHS

NOTES: E7=DDR3-800 (5-5-5) F8 = DDR3-1066 (7-7-7) G9=DDR3-1333 (8-8-8) Voltage: 1.5V

DDR2 DRAM SODIMM MODULES

Density Org Speed (Mbps) Part Number Rank Composition Package

512MB 64Mx64 533/667 M470T6554EZ3-C(D5/E6) 2 (32M x16)*8 Lead-free

1GB 128Mx64 533/667 M470T2953EZ3-C(D5/E6) 2 (64M x8)*16 Lead-free

1GB 128Mx64 533/667 M470T2864DZ3-C(D5/E6) 2 (64M x16)*8 Lead-free

2GB 256Mx64 533/667 M470T5663CZ3-C(D5/E6) 2 st.(256M x8)*8 Lead-free

NOTES: CC=PC2-3200 (DDR2-400 @ CL=3) D5 =PC2-4200 (DDR2-533 @ CL=4) E6=PC2-5300 (DDR2-667 @ CL=5) Voltage: 1.8V Module Height=1.2"

MEMORY AND STORAGE

DDR2 / DDR SDRAM

SAMSUNG SEMICONDUCTOR, INC.

AUGUST 2007

BR-07-ALL-001

DDR SDRAM DIMM MODULES: UNBUFFERED

Density Org Speed (Mbps) Composition Part Number Notes

512MB 64MX64 333/400 (64M x8) *8 M368L6523DUS-CB3/CCC Pb-free

512MB 64Mx72 333/400 (64M x 8)*9 M381L6523DUM-CB3/CCC Pb-free

1GB 128Mx64 333/400 (64M x 8)*16 M368L2923DUN-CB3/CCC Pb-free

1GB 128Mx72 333/400 (64M x 8)*18 M381L2923DUM-CB3/CCC Pb-free

NOTES: B0 = DDR266 (133MHz @ CL=2.5) A2 = DDR266 (133MHz @ Cl=2) B3 = DDR333 (166MHz @ CL=2.5) CC = DDR400 (200MHz @ CL=3)

Type: 184-pin Package:TSOP components Voltage: 2.5V

DDR SDRAM 1U DIMM MODULES: REGISTERED

Component # Banks

Density Org Speed (Mbps) Composition Part Number Package Module Notes

512MB 64Mx72 333/400 (64Mx8)*9 M312L6523DZ3 - CB3/CCC FBGA 1 Pb-free

1GB 128Mx72 333/400 (128Mx4)*18 M312L2920DZ3 -CB3/CCC FBGA 1 Pb-free

2GB 256Mx72 333/400 (128Mx4)*36 M312L5720DZ3-CB3/CCC FBGA 2 Pb-free

NOTES: B0 = DDR266 (133MHz @ CL=2.5) A2 = DDR266 (133MHz @ Cl=2) B3 = DDR333 (166MHz @ CL=2.5) CC = DDR400 (200MHz @ CL=3)

Type: 184-pin

DDR DRAM SODIMM MODULES

Density Org Speed (Mbps) Composition Part Number Notes

512MB 64Mx64 333 (32M x 16)*4 M470L6524DU0-CB300 Pb-free

1GB 128MX64 333 (64M x 8)*16 M470L2923BN0 - C(L)B3

1GB 128MX64 333 (64M x 8)*16 M470L2923DV0-CB300 Pb-free

NOTES: B0 = DDR266 (133MHz @ CL=2.5) A2 = DDR266 (133MHz @ Cl=2) B3 = DDR333 (166MHz @ CL=2.5) CC = DDR400 (200MHz @ CL=3)

Type: 200-pin,Double Sided Height(in): 1.25

DDR2 SDRAM COMPONENTS

Package

Density Org Speed (Mbps) Part Number Package Dimension

512Mb 128M x4 400/533/667 K4T51043QE-ZC(CC/D5/E6) 60ball FBGA 10x11mm

512Mb 64M x8 400/533/667/800 K4T51083QE-ZC(CC/D5/E6/E7) 60ball FBGA 10x11mm

512Mb 32M x16 400/533/667 K4T51163QE-ZC(CC/D5/E6) 84ball FBGA 11x13mm

1Gb 256M x4 533/667 K4T1G044QC-ZC(D5/E6) 68ball FBGA 11x18mm

1Gb 128M x8 533/667 K4T1G084QD-ZC(D5/E6) 68ball FBGA 11x18mm

1Gb 64M x16 533/667 K4T1G164QD-ZC(D5/E6) 84ball FBGA 11x18mm

NOTES: CC=DDR2-400 (3-3-3) D5 = DDR2-533 (4-4-4) E6=DDR2-667 (5-5-5) E7=DDR2-800 (5-5-5) Voltage: 1.8V

DDR2 SDRAM UNBUFFERED MODULES

Density Org Speed (Mbps) Part Number Rank Composition Package

512MB 64Mx64 533/667/800 M378T6553EZS-C(D5/E6/E7/F7) 1 (64M x8)*8 Lead-free

1GB 128Mx64 533/667/800 M378T2953EZ3-C(D5/E6/E7/F7) 2 (64M x8)*16 Lead-free

1GB 128MX72 533/667/800 M378T2863DZS-C(D5/E6/E7/F7) 1 (128MX8)*9 Lead-free

2GB 256Mx64 533/667 M378T5663DZ3-C(D5/E6) 2 (128M x8)*16 Lead-free

NOTES: CC=PC2-3200 (DDR2-400 @ CL=3) D5 = PC2-4200 (DDR2-533 @ CL=4) E6=PC2-5300 (DDR2-667 @ CL=5) E7=PC2-6400 (DDR2-800 @ CL=5) Voltage: 1.8V

Module Height =1.2" F7=PC2-6400

DDR SDAM / SDRAM

SAMSUNG SEMICONDUCTOR, INC.

AUGUST 2007

BR-07-ALL-001

DDR SDRAM COMPONENTS

Density Org Speed (Mbps) Part Number Package Notes

256M 64Mx4 266 K4H560438H-UC(L)B0 66 pin TSOP Pb-free

256M 64Mx4 333/400 K4H560438H-ZC(L)CC/B3 60 ball FBGA Pb-free

256M 32Mx8 333/400 K4H560838H-UC(L)B3/CCC 66 pin TSOP Pb-free

256M 32Mx8 333/400 K4H560838H-ZC(L)B3/CCC 60 ball FBGA Pb-free

256M 16Mx16 333/400 K4H561638H-UC(L)/B3/CCC 66 pin TSOP Pb-free

256M 16Mx16 333/400 K4H561638H-ZC(L)B3/CCC 60 ball FBGA Pb-free

512M 128Mx4 333/400 K4H510438D-ZC(L)B3/CCC 60 ball FBGA Pb-free

512M 64Mx8 333/400 K4H510838D-UC(L)B3/CCC 66 pin TSOP Pb-free

512M 64Mx8 333/400 K4H510838D-ZC(L)B3/CCC 60 ball FBGA Pb-free

512M 64Mx8 333/400 K4H510838D-UC(L)B3/CCC 66 pin TSOP Pb-free

512M 32Mx16 333/400 K4H511638D-UC(L)B3/CCC 66 pin TSOP Pb-free

512M 32Mx16 333/400 K4H511638D-ZC(L)B3/CCC 60 ball FBGA Pb-free

512M 32Mx16 333/400 K4H511638D-UC(L)B3/CCC 66 pin TSOP Pb-free

NOTES: B0 = DDR266 (133MHz @ CL=2.5) A2 = DDR266 (133MHz @ Cl=2) B3 = DDR333 (166MHz @ CL=2.5) CC = DDR400 (200MHz @ CL=3)

1U SDRAM DIMM MODULES, PC133 / PC100 COMPLIANT: REGISTERED

LOW-PROFILE DIMMs (1.2-INCH HEIGHT)

# Banks

Density Org Speed Composition Part Number Module Refresh Remarks

128MB** 16Mx72 PC133 (16x8)*9 M390S1723TU - C7A00 1 4K

256MB 32Mx72 PC133 (32Mx8)*9 M390S3253HUU - C7A00 1 8K

512MB 64Mx72 PC133 (64Mx4)*18 M390S6450HUU - C7A00 2 8K stacked

1GB 128Mx72 PC133 (St.128Mx4)*18 M390S2858ETU - C7A00 2 8K

1GB 128Mx72 PC133 (128Mx4)*18 M390S2950DUU - C7A00 2 8K

2GB 256Mx72 PC133 (St.128Mx4)*18 M390S5658DUU - C7A00 2 8K

NOTES: St.= Stacked components Type: 168 pin, Double sided Package:TSOP Components Voltage: 3.3V stacked, avail Q204

SDRAM SODIMM MODULES

Height # Banks

Density Org Speed Composition Part Number (in) Module

128MB 16Mx64 PC133 (8Mx16)*8 M464S1724ITS-L7A00 1.15 1

256MB 32Mx64 PC133 (16Mx16)*8 M464S3254HUS-L7A00 1.25 1

256MB 32Mx64 PC133 (32Mx16)*4 M464S3354DUS-C(L)7A 1.25 1

512MB 64Mx64 PC133 (32Mx16)*8 M464S6554DUS-C(L)7A 1.18 1

512MB 64Mx64 PC133 (64Mx8)*16 M464S6453HV0-C75/L7500 1.25 2

NOTES: DS = Double-Sided L = Commercial Temp., Low Power Interface: SSTL-2 # Banks: 4 Latency: CL6 Refresh: 8K/32ms

SDRAM DIMM MODULES, PC133 COMPLIANT: UNBUFFERED

# Banks

Density Org Speed (Mbps) Composition Part Number Module

128MB 16Mx72 PC133 128M: (16Mx8)*9 M374S1723KUS-C7A00 1

256MB 32Mx64 PC133 256M: (16Mx8)*16 M366S3323KUS- C7A00 2

256MB 32Mx72 PC133 256M: (16Mx8)*18 M374S3323KUS-C7A00 2

256MB 32Mx64 PC133 256M: (32Mx8)*8 M366S3253HUS-C7A00 1

512MB 64Mx64 PC133 256M: (32Mx8)*16 M366S6453HUS-C7A00 2

1GB 128Mx64 PC133 512M: (64Mx8)*16 M366S2953DUS-C7A00 2

NOTES: Type: 168 pin Package:TSOP components Voltage: 3.3V

MEMORY AND STORAGE

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