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TCAD 仿真软件教程及其实例
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TCAD 仿真软件教程及其实例
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Yung-ChunWu
Yi-Ruei Jhan
3D TCAD
Simulation
for CMOS
Nanoeletronic
Devices
3D TCAD Simulation for CMOS Nanoeletronic
Devices
Yung-Chun Wu
•
Yi-Ruei Jhan
3D TCAD Simulation
for CMOS Nanoele tronic
Devices
123
L
g
=10nm
FinFET
S
D
B
G
STI
Fin
S
S
D
G AA
N W
GAA NWFET
L
g
=10nm
Yung-Chun Wu
Department of Engineering and System
Science
National Tsing Hua University
Hsinchu
Taiwan
Yi-Ruei Jhan
Department of Engineering and System
Science
National Tsing Hua University
Hsinchu
Taiwan
ISBN 978-981-10-3065-9 ISBN 978-981-10-3066-6 (eBook)
DOI 10.1007/978-981-10-3066-6
Library of Congress Control Number: 2017939532
© Springer Nature Singapore Pte Ltd. 2018
This work is subject to copyright. All rights are reserved by the Publisher, whether the whole or part
of the material is concerned, specifically the rights of translation, reprinting, reuse of illustrations,
recitation, broadcasting, reproduction on microfilms or in any other physical way, and transmission
or information storage and retrieval, electronic adaptation, computer software, or by similar or dissimilar
methodology now known or hereafter developed.
The use of general descriptive names, registered names, trademarks, service marks, etc. in this
publication does not imply, even in the absence of a specific statement, that such names are exempt from
the relevant protective laws and regulations and therefore free for general use.
The publisher, the authors and the editors are safe to assume that the advice and information in this
book are believed to be true and accurate at the date of publication. Neither the publisher nor the
authors or the editors give a warranty, express or implied, with respect to the material contained herein or
for any errors or omissions that may have been made. The publisher remains neutral with regard to
jurisdictional claims in published maps and institutional affiliations.
Printed on acid-free paper
This Springer imprint is published by Springer Nature
The registered company is Springer Nature Singapore Pte Ltd.
The registered company address is: 152 Beach Road, #21-01/04 Gateway East, Singapore 189721, Singapore
Preface
Almost on a daily basis, nanoeletronic metal-oxide-s emiconductor (CMOS) tech-
nology and device design are introduced and explored in rapidly developing
semiconductor industry. This book “3D TCAD Simulation for CMOS
Nanoeletronic Devices” presents a self-contained and up-to-date critical ideas and
illustrations that will help the readers to understand nano electronics device design
and its background fundamental physics in detail. Along with basic concepts, the
book includes numerous examples which will assist the readers to clearly under-
stand advanced semiconductor research as well. This book will be a proper resource
for graduate students doing research in CMOS Nanoeletronic Devices and also for
the professional engineers working in both academia and industry. It can also serve
as a reference for device research and development engineers and experts in
semiconductor industry.
This book reflects the belief that in semiconductor device physics by means of
illustrative problems with step-by-step TCAD solutions. This book contents are
based on the Synopsys Sentaurus TCAD 2014 version. This book thoroughly
describes the tools and models for modern nanoeletronic devices by computer
simulation technology with which one shall design, develop, and optimize semi-
conductor device structure and process technology with respect to different
important commercialized semiconductor devices and materials. By using TCAD
simulation for the analysis of electric and physical properties, time consumed in
expensive device fabrication can be minimized leading to effective research output
and huge amount of resources and manpower could also be saved. Synopsys
Sentaurus TCAD is the leader in global d evelopment of 3D TCAD Simulation for
CMOS Nanoeletronic Devices. Power houses in semiconductor industry such as
Intel, TSMC, Samsung, and IBM are all using the Synopsys product s.
This book also considers all the basic semiconductor device physics theory along
with recent advanced quantum perspective for nanoelectronic semiconductor device
design. It is suggested that readers should have preliminary semiconductor
knowledge before reading this book for a better understanding. This book is
focused on three main subje cts. Part I (Chapters 1–4) are about simulation of
electrical and physical properties of Silicon CMOSFET. It starts with the designs of
v
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