1) J-STD20 and JESD22
2) All devices tested under avalanche conditions for a time periode of 10ms
3) Per Leg
4) Per Device
Final Datasheet 2 Rev. 2.0, 2015-04-13
1 Description
Features
Revolutionary semiconductor material - Silicon Carbide
Benchmark switching behavior
No reverse recovery/ No forward recovery
Temperature independent switching behavior
High surge current capability
Pb-free lead plating; RoHS compliant
Qualified according to JEDEC
1)
for target applications
Breakdown voltage tested at 9 mA
2)3)
Optimized for high temperature operation
Benefits
System efficiency improvement over Si diodes
System cost / size savings due to reduced cooling requirements
Enabling higher frequency / increased power density solutions
Higher system reliability due to lower operating temperatures
Reduced EMI
Applications
Switch mode power supply
Power factor correction
Solar inverter
Uninterruptible power supply
Table 1 Key Performance Parameters
4)
Table 2 Pin Definition
5
th
Generation thinQ!™ SiC Schottky Diode
ThinQ!™ Generation 5 represents Infineon leading edge technology for the SiC
Schottky Barrier diodes. A combination with a new, more compact design and thin-
wafer technology results is a new family of products showing improved efficiency
over all load conditions, resulting from both the improved thermal characteristics
and a lower figure of merit (Qc x Vf).
The new thinQ!™ Generation 5 has been designed to complement our 650V
CoolMOS™ families: this ensures meeting the most stringent application
requirements in this voltage range.
