1) J-STD20 and JESD22
2) All devices tested under avalanche conditions for a time periode of 10ms
Final Data Sheet 2 Rev. 2.2, 2013-01-15
1 Description
Features
Revolutionary semiconductor material - Silicon Carbide
Benchmark switching behavior
No reverse recovery/ No forward recovery
Temperature independent switching behavior
High surge current capability
Pb-free lead plating; RoHS compliant
Qualified according to JEDEC
1)
for target applications
Breakdown voltage tested at 44 mA
2)
Optimized for high temperature operation
Benefits
System efficiency improvement over Si diodes
System cost / size savings due to reduced cooling requirements
Enabling higher frequency / increased power density solutions
Higher system reliability due to lower operating temperatures
Reduced EMI
Applications
Switch mode power supply
Power factor correction
Solar inverter
Uninterruptible power supply
Table 1 Key Performance Parameters
Parameter Value Unit
V
DC
650 V
Q
C
; V
R
=400V 29 nC
E
C
; V
R
=400V 6.6 µJ
I
F
@ T
C
< 120°C 20 A
Table 2 Pin Definition
Pin 1 Pin 2 Pin 3
n.c. C A
Type / ordering Code Package Marking Related links
IDW20G65C5 PG-TO247-3 D2065C5 www.infineon.com/sic
IDW20G65C55
th
Generation thinQ!™ SiC Schottk
Diode
ThinQ!™ Generation 5 represents Infineon leading edge technology for the SiC
Schottky Barrier diodes. Thanks to the more compact design and thin-wafer
technology, the new family of products shows improved efficiency over all load
conditions, resulting from both the improved thermal characteristics and a lower
figure of merit (Qc x Vf).
The new thinQ!™ Generation 5 has been designed to complement our 650V
CoolMOS™ families: this ensures meeting the most stringent application
requirements in this voltage range.
1
2
3
1
2
3
CASE
