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IPP60R022S7 INFINEON 英飞凌芯片 中文版规格书手册.pdf
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IPP60R022S7 INFINEON 英飞凌芯片 中文版规格书手册
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1
IPP60R022S7
Rev.2.0,2019-05-07Final Data Sheet
tab
PG-TO220
Drain
Pin 2, Tab
Gate
Pin 1
Source
Pin 3
*1
*1: Internal body diode
MOSFET
600VCoolMOSªSJS7PowerDevice
IPP60R022S7enablesthebestpriceperformanceforlowfrequency
switchingapplications.CoolMOS™S7boaststhelowestRdsonvaluesfor
aHVSJMOSFET,withdistinctiveincreaseofenergyefficiency.
CoolMOS™S7isoptimizedfor“staticswitching”andhighcurrent
applications.Itisanidealfitforsolidstaterelayandcircuitbreakerdesigns
aswellasforlinerectificationinSMPSandinvertertopologies.
Features
•CoolMOS™S7technologyenables22mΩR
DS(on)
inthesmallestfootprint
•Optimizedpriceperformanceinlowfrequencyswitchingapplications
•Highpulsecurrentcapability
•TO220packagewithtotalPb-freedieattach
Benefits
•Minimizedconductionlosses(eliminate/reduceheatsink)
•Increasedsystemperformance
•Morecompactandeasierdesign
•LowerBOMor/andTCOoverprolongedlifetime
Comparedtoelectromechanicaldevices:
•Fasterswitchingtimes
•Morereliabilityandlongersystemlifetime
•Shock&Vibrationresistance
•Nocontactarcing,bouncingordegradationoverlifetime
Potentialapplications
•Solidstaterelaysandcircuitbreakers
•Linerectificationinhighpower/performanceapplicationse.g.Computing,
Telecom,UPSandSolar
Productvalidation
FullyqualifiedaccordingtoJEDECforIndustrialApplications
Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate
orseparatetotempolesisgenerallyrecommended.
Table1KeyPerformanceParameters
Parameter Value Unit
R
DS(on),max
22 mΩ
Q
g,typ
150 nC
V
SD
0.83 V
Pulsed I
SD
, I
DS
375 A
Type/OrderingCode Package Marking RelatedLinks
IPP60R022S7 PG-TO 220-3 60R022S7 see Appendix A
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2
600VCoolMOSªSJS7PowerDevice
IPP60R022S7
Rev.2.0,2019-05-07Final Data Sheet
TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
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3
600VCoolMOSªSJS7PowerDevice
IPP60R022S7
Rev.2.0,2019-05-07Final Data Sheet
1Maximumratings
atT
j
=25°C,unlessotherwisespecified
Table2Maximumratings
Values
Min. Typ. Max.
Parameter Symbol Unit Note/TestCondition
Drain current rating I
D
- - 23 A
T
C
=140°C
Current is limited by T
j max
= 150°C;
Lower case temp does increase
current capability
Pulsed drain current
1)
I
D,pulse
- - 375 A T
C
=25°C
Avalanche energy, single pulse E
AS
- - 289 mJ I
D
=3.8A; V
DD
=50V; see table 10
Avalanche current, single pulse I
AS
- - 3.8 A -
MOSFET dv/dt ruggedness
2)
dv/dt - - 20 V/ns V
DS
=0Vto300V
Gate source voltage (static) V
GS
-20 - 20 V static
Gate source voltage (dynamic) V
GS
-30 - 30 V AC (f>1 Hz)
Power dissipation P
tot
- - 390 W T
C
=25°C
Storage temperature T
stg
-55 - 150 °C -
Operating junction temperature T
j
-55 - 150 °C -
Mounting torque - - - 60 Ncm M3 and M3.5 screws
Diode forward current rating I
S
- - 23 A
T
C
=140°C
Current is limited by T
j max
= 150°C;
Lower case temp does increase
current capability
Diode pulse current
1)
I
S,pulse
- - 375 A T
C
=25°C
Reverse diode dv/dt
3)
dv/dt - - 5 V/ns
V
DS
=0to300V,I
SD
<=23A,T
j
=25°C
see table 8
Maximum diode commutation speed di
f
/dt - - 820 A/µs
V
DS
=0to300V,I
SD
<=23A,T
j
=25°C
see table 8
Insulation withstand voltage V
ISO
- - n.a. V V
rms
,T
C
=25°C,t=1min
1)
Pulse width t
p
limited by T
j,max
2)
The dv/dt has to be limited by appropriate gate resistor
3)
Identical low side and high side switch
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