IPP60R180C7 INFINEON 英飞凌芯片 中文版规格书手册.pdf

MOSFET

MetalOxideSemiconductorFieldEffectTransistor

CoolMOS™C7

600VCoolMOS™C7PowerTransistor

IPP60R180C7

DataSheet

Rev.2.0

Final

PowerManagement&Multimarket

CoolMOS™C7isarevolutionarytechnologyforhighvoltagepower

MOSFETs,designedaccordingtothesuperjunction(SJ)principleand

•Suitableforhardandsoftswitching(PFCandhighperformanceLLC)

•IncreasedMOSFETdv/dtruggednessto120V/ns

•IncreasedefficiencyduetobestinclassFOMR

*E

andR

*Q

•BestinclassR

•QualifiedforindustrialgradeapplicationsaccordingtoJEDEC(J-STD20

andJESD22)

•IncreasedeconomiesofscalebyuseinPFCandPWMtopologiesinthe

lowEossandQg

PFCstagesandPWMstages(TTF,LLC)forhighpower/performance

SMPSe.g.Computing,Server,Telecom,UPSandSolar.

Parameter Value Unit

V

I

@ T

j

<150°C 22 A

E

@400V 2.7 µJ

Body diode di/dt 350 A/µs

Type/OrderingCode Package Marking RelatedLinks

IPP60R180C7 PG-TO 220 60C7180 see Appendix A

Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15

Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15