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IPA60R160P7 INFINEON 英飞凌芯片 中文版规格书手册.pdf
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IPA60R160P7 INFINEON 英飞凌芯片 中文版规格书手册
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1
IPA60R160P7
Rev.2.0,2019-02-26Final Data Sheet
PG-TO220FP
Drain
Pin 2
Gate
Pin 1
Source
Pin 3
MOSFET
600VCoolMOSªP7PowerTransistor
TheCoolMOS™7thgenerationplatformisarevolutionarytechnologyfor
highvoltagepowerMOSFETs,designedaccordingtothesuperjunction
(SJ)principleandpioneeredbyInfineonTechnologies.The600V
CoolMOS™P7seriesisthesuccessortotheCoolMOS™P6series.It
combinesthebenefitsofafastswitchingSJMOSFETwithexcellentease
ofuse,e.g.verylowringingtendency,outstandingrobustnessofbody
diodeagainsthardcommutationandexcellentESDcapability.
Furthermore,extremelylowswitchingandconductionlossesmake
switchingapplicationsevenmoreefficient,morecompactandmuch
cooler.
Features
•Suitableforhardandsoftswitching(PFCandLLC)duetoanoutstanding
commutationruggedness
•Significantreductionofswitchingandconductionlosses
•ExcellentESDrobustness>2kV(HBM)forallproducts
•BetterR
DS(on)
/packageproductscomparedtocompetitionenabledbya
lowR
DS(on)
*A(below1Ohm*mm²)
Benefits
•Easeofuseandfastdesign-inthroughlowringingtendencyandusage
acrossPFCandPWMstages
•Simplifiedthermalmanagementduetolowswitchingandconduction
losses
•Increasedpowerdensitysolutionsenabledbyusingproductswith
smallerfootprintandhighermanufacturingqualitydueto>2kVESD
protection
•Suitableforawidevarietyofapplicationsandpowerranges
Potentialapplications
PFCstages,hardswitchingPWMstagesandresonantswitchingstages
fore.g.PCSilverbox,Adapter,LCD&PDPTV,Lighting,Server,Telecom
andUPS.
Productvalidation
FullyqualifiedaccordingtoJEDECforIndustrialApplications
Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate
orseparatetotempolesisgenerallyrecommended.
Table1KeyPerformanceParameters
Parameter Value Unit
V
DS
@ T
j,max
650 V
R
DS(on),max
160 mΩ
Q
g,typ
31 nC
I
D,pulse
66 A
E
oss
@ 400V 3.5 µJ
Body diode di
F
/dt 900 A/µs
Type/OrderingCode Package Marking RelatedLinks
IPA60R160P7 PG-TO 220 FullPAK 60R160P7 see Appendix A
2
600VCoolMOSªP7PowerTransistor
IPA60R160P7
Rev.2.0,2019-02-26Final Data Sheet
TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
3
600VCoolMOSªP7PowerTransistor
IPA60R160P7
Rev.2.0,2019-02-26Final Data Sheet
1Maximumratings
atT
j
=25°C,unlessotherwisespecified
Table2Maximumratings
Values
Min. Typ. Max.
Parameter Symbol Unit Note/TestCondition
Continuous drain current
1)
I
D
-
-
-
-
20
13
A
T
C
=25°C
T
C
=100°C
Pulsed drain current
2)
I
D,pulse
- - 66 A T
C
=25°C
Avalanche energy, single pulse E
AS
- - 69 mJ I
D
=4.1A; V
DD
=50V; see table 10
Avalanche energy, repetitive E
AR
- - 0.35 mJ I
D
=4.1A; V
DD
=50V; see table 10
Avalanche current, single pulse I
AS
- - 4.1 A -
MOSFET dv/dt ruggedness dv/dt - - 80 V/ns V
DS
=0...400V
Gate source voltage (static) V
GS
-20 - 20 V static;
Gate source voltage (dynamic) V
GS
-30 - 30 V AC (f>1 Hz)
Power dissipation P
tot
- - 26 W T
C
=25°C
Storage temperature T
stg
-55 - 150 °C -
Operating junction temperature T
j
-55 - 150 °C -
Mounting torque - - - 50 Ncm M2.5 screws
Continuous diode forward current I
S
- - 20 A T
C
=25°C
Diode pulse current
2)
I
S,pulse
- - 66 A T
C
=25°C
Reverse diode dv/dt
3)
dv/dt - - 50 V/ns
V
DS
=0...400V,I
SD
<=20A,T
j
=25°C
see table 8
Maximum diode commutation speed di
F
/dt - - 900 A/µs
V
DS
=0...400V,I
SD
<=20A,T
j
=25°C
see table 8
Insulation withstand voltage V
ISO
- - 2500 V V
rms
,T
C
=25°C,t=1min
1)
Limited by T
j,max
. Maximum Duty Cycle D = 0.50; TO-220 equivalent
2)
Pulse width t
p
limited by T
j,max
3)
Identical low side and high side switch with identical R
G
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