没有合适的资源?快使用搜索试试~ 我知道了~
IPA60R280P7 INFINEON 英飞凌芯片 中文版规格书手册.pdf
需积分: 5 0 下载量 159 浏览量
2023-06-07
10:03:47
上传
评论
收藏 1.06MB PDF 举报
温馨提示
![preview](https://dl-preview.csdnimg.cn/87873913/0001-0a613b9b10e476308faeab8f5d86c568_thumbnail.jpeg)
![preview-icon](https://csdnimg.cn/release/downloadcmsfe/public/img/scale.ab9e0183.png)
试读
14页
IPA60R280P7 INFINEON 英飞凌芯片 中文版规格书手册
资源推荐
资源详情
资源评论
![pdf](https://img-home.csdnimg.cn/images/20210720083512.png)
![pdf](https://img-home.csdnimg.cn/images/20210720083512.png)
![pdf](https://img-home.csdnimg.cn/images/20210720083512.png)
![pdf](https://img-home.csdnimg.cn/images/20210720083512.png)
![pdf](https://img-home.csdnimg.cn/images/20210720083512.png)
![pdf](https://img-home.csdnimg.cn/images/20210720083512.png)
![pdf](https://img-home.csdnimg.cn/images/20210720083512.png)
![pdf](https://img-home.csdnimg.cn/images/20210720083512.png)
![pdf](https://img-home.csdnimg.cn/images/20210720083512.png)
![pdf](https://img-home.csdnimg.cn/images/20210720083512.png)
![pdf](https://img-home.csdnimg.cn/images/20210720083512.png)
![pdf](https://img-home.csdnimg.cn/images/20210720083512.png)
![pdf](https://img-home.csdnimg.cn/images/20210720083512.png)
![pdf](https://img-home.csdnimg.cn/images/20210720083512.png)
![pdf](https://img-home.csdnimg.cn/images/20210720083512.png)
![](https://csdnimg.cn/release/download_crawler_static/87873913/bg1.jpg)
1
IPA60R280P7
Rev.2.1,2018-05-15Final Data Sheet
PG-TO220FP
Drain
Pin 2
Gate
Pin 1
Source
Pin 3
MOSFET
600VCoolMOSªP7PowerTransistor
TheCoolMOS™7thgenerationplatformisarevolutionarytechnologyfor
highvoltagepowerMOSFETs,designedaccordingtothesuperjunction
(SJ)principleandpioneeredbyInfineonTechnologies.The600V
CoolMOS™P7seriesisthesuccessortotheCoolMOS™P6series.It
combinesthebenefitsofafastswitchingSJMOSFETwithexcellentease
ofuse,e.g.verylowringingtendency,outstandingrobustnessofbody
diodeagainsthardcommutationandexcellentESDcapability.
Furthermore,extremelylowswitchingandconductionlossesmake
switchingapplicationsevenmoreefficient,morecompactandmuch
cooler.
Features
•Suitableforhardandsoftswitching(PFCandLLC)duetoanoutstanding
commutationruggedness
•Significantreductionofswitchingandconductionlosses
•ExcellentESDrobustness>2kV(HBM)forallproducts
•BetterR
DS(on)
/packageproductscomparedtocompetitionenabledbya
lowR
DS(on)
*A(below1Ohm*mm²)
•Fullyqualifiedacc.JEDECforIndustrialApplications
Benefits
•Easeofuseandfastdesign-inthroughlowringingtendencyandusage
acrossPFCandPWMstages
•Simplifiedthermalmanagementduetolowswitchingandconduction
losses
•Increasedpowerdensitysolutionsenabledbyusingproductswith
smallerfootprintandhighermanufacturingqualitydueto>2kVESD
protection
•Suitableforawidevarietyofapplicationsandpowerranges
Potentialapplications
PFCstages,hardswitchingPWMstagesandresonantswitchingstages
fore.g.PCSilverbox,Adapter,LCD&PDPTV,Lighting,Server,Telecom
andUPS.
Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate
orseparatetotempolesisgenerallyrecommended.
Table1KeyPerformanceParameters
Parameter Value Unit
V
DS
@ T
j,max
650 V
R
DS(on),max
280 mΩ
Q
g,typ
18 nC
I
D,pulse
36 A
E
oss
@ 400V 2.1 µJ
Body diode di
F
/dt 900 A/µs
Type/OrderingCode Package Marking RelatedLinks
IPA60R280P7 PG-TO 220 FullPAK 60R280P7 see Appendix A
![](https://csdnimg.cn/release/download_crawler_static/87873913/bg2.jpg)
2
600VCoolMOSªP7PowerTransistor
IPA60R280P7
Rev.2.1,2018-05-15Final Data Sheet
TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
![](https://csdnimg.cn/release/download_crawler_static/87873913/bg3.jpg)
3
600VCoolMOSªP7PowerTransistor
IPA60R280P7
Rev.2.1,2018-05-15Final Data Sheet
1Maximumratings
atT
j
=25°C,unlessotherwisespecified
Table2Maximumratings
Values
Min. Typ. Max.
Parameter Symbol Unit Note/TestCondition
Continuous drain current
1)
I
D
-
-
-
-
12
8
A
T
C
=25°C
T
C
=100°C
Pulsed drain current
2)
I
D,pulse
- - 36 A T
C
=25°C
Avalanche energy, single pulse E
AS
- - 38 mJ I
D
=2.7A; V
DD
=50V; see table 10
Avalanche energy, repetitive E
AR
- - 0.19 mJ I
D
=2.7A; V
DD
=50V; see table 10
Avalanche current, single pulse I
AS
- - 2.7 A -
MOSFET dv/dt ruggedness dv/dt - - 80 V/ns V
DS
=0...400V
Gate source voltage (static) V
GS
-20 - 20 V static;
Gate source voltage (dynamic) V
GS
-30 - 30 V AC (f>1 Hz)
Power dissipation P
tot
- - 24 W T
C
=25°C
Storage temperature T
stg
-55 - 150 °C -
Operating junction temperature T
j
-55 - 150 °C -
Mounting torque - - - 50 Ncm M2.5 screws
Continuous diode forward current I
S
- - 12 A T
C
=25°C
Diode pulse current
2)
I
S,pulse
- - 36 A T
C
=25°C
Reverse diode dv/dt
3)
dv/dt - - 50 V/ns
V
DS
=0...400V,I
SD
<=12A,T
j
=25°C
see table 8
Maximum diode commutation speed di
F
/dt - - 900 A/µs
V
DS
=0...400V,I
SD
<=12A,T
j
=25°C
see table 8
Insulation withstand voltage V
ISO
- - 2500 V V
rms
,T
C
=25°C,t=1min
1)
Limited by T
j,max
. Maximum Duty Cycle D = 0.50; TO-220 equivalent
2)
Pulse width t
p
limited by T
j,max
3)
Identical low side and high side switch with identical R
G
剩余13页未读,继续阅读
资源评论
![avatar-default](https://csdnimg.cn/release/downloadcmsfe/public/img/lazyLogo2.1882d7f4.png)
![avatar](https://profile-avatar.csdnimg.cn/default.jpg!1)
芯脉芯城
- 粉丝: 3
- 资源: 4031
上传资源 快速赚钱
我的内容管理 展开
我的资源 快来上传第一个资源
我的收益
登录查看自己的收益我的积分 登录查看自己的积分
我的C币 登录后查看C币余额
我的收藏
我的下载
下载帮助
![voice](https://csdnimg.cn/release/downloadcmsfe/public/img/voice.245cc511.png)
![center-task](https://csdnimg.cn/release/downloadcmsfe/public/img/center-task.c2eda91a.png)
最新资源
- 12位双通道高速ADC芯片AD9238评估板开发模块ALTIUM设计硬件(原理图+PCB)工程文件.zip
- 基于74LS160的20到70的置数仿真节线图
- 解决mac上qt链接mysql方案加使用软件,经测试连接成功
- 锅炉引风机控制;变频调速技术;PLC;组态软件
- Java项目-电影院售票管理系统(java+Servlet+JSP+JDBC+Mysql)
- SSM整合开发-图书管理系统
- 计二202301020210蒋怡.zip
- 基于74LS160的70进制计数器仿真节线图
- 基于74LS160的30进制与70进制转化仿真节线图
- 【用360解压工具解压】springboot+vue实验室(预约)管理系统【www.java1234.com】.zip
资源上传下载、课程学习等过程中有任何疑问或建议,欢迎提出宝贵意见哦~我们会及时处理!
点击此处反馈
![feedback](https://img-home.csdnimg.cn/images/20220527035711.png)
![feedback](https://img-home.csdnimg.cn/images/20220527035711.png)
![feedback-tip](https://img-home.csdnimg.cn/images/20220527035111.png)
安全验证
文档复制为VIP权益,开通VIP直接复制
![dialog-icon](https://csdnimg.cn/release/downloadcmsfe/public/img/green-success.6a4acb44.png)