2
600VCoolMOS™C7PowerTransistor
IPA60R120C7
Rev.2.0,2015-12-01Final Data Sheet
TO-220FP
Drain
Pin 2
Gate
Pin 1
Source
Pin 3
1Description
CoolMOS™C7isarevolutionarytechnologyforhighvoltagepower
MOSFETs,designedaccordingtothesuperjunction(SJ)principleand
pioneeredbyInfineonTechnologies.
600VCoolMOS™C7seriescombinestheexperienceoftheleadingSJ
MOSFETsupplierwithhighclassinnovation.
The600VC7isthefirsttechnologyeverwithR
DS(on)
*Abelow1Ohm*mm².
Features
•Suitableforhardandsoftswitching(PFCandhighperformanceLLC)
•IncreasedMOSFETdv/dtruggednessto120V/ns
•IncreasedefficiencyduetobestinclassFOMR
DS(on)
*E
oss
andR
DS(on)
*Q
g
•BestinclassR
DS(on)
/package
•QualifiedforindustrialgradeapplicationsaccordingtoJEDEC(J-STD20
andJESD22)
Benefits
•IncreasedeconomiesofscalebyuseinPFCandPWMtopologiesinthe
application
•Higherdv/dtlimitenablesfasterswitchingleadingtohigherefficiency
•Enablinghighersystemefficiencybylowerswitchinglosses
•Increasedpowerdensitysolutionsduetosmallerpackages
•Suitableforapplicationssuchasserver,telecomandsolar
•Higherswitchingfrequenciespossiblewithoutlossinefficiencydueto
lowEossandQg
Applications
PFCstagesandPWMstages(TTF,LLC)forhighpower/performance
SMPSe.g.Computing,Server,Telecom,UPSandSolar.
Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate
orseparatetotempolesisgenerallyrecommended.
Table1KeyPerformanceParameters
Parameter Value Unit
V
DS
@ T
j,max
650 V
R
DS(on),max
120 mΩ
Q
g.typ
34 nC
I
D,pulse
66 A
I
D,continuous
@ T
j
<150°C 31 A
E
oss
@400V 4 µJ
Body diode di/dt 360 A/µs
Type/OrderingCode Package Marking RelatedLinks
IPA60R120C7 PG-TO 220 FullPAK 60C7120 see Appendix A
