IPD60R210PFD7S INFINEON 英飞凌芯片 中文版规格书手册.pdf

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IPD60R210PFD7S

Rev.2.0,2019-04-09Final Data Sheet

DPAK

CoolMOS™isarevolutionarytechnologyforhighvoltagepower

MOSFETs,designedaccordingtothesuperjunction(SJ)principleand

pioneeredbyInfineonTechnologies.

ThelatestCoolMOS™PFD7isanoptimizedplatformtailoredtotarget

costsensitiveapplicationsinconsumermarketssuchascharger,adapter,

motordrive,lighting,etc.

•ExtremelylowlossesduetoverylowFOMR

*Q

andR

*E

•LowswitchinglossesE

•Fastbodydiode

•WiderangeportfolioofR

•Enableshighpowerdensitydesignsandsmallformfactors

•Enablesefficiencygainsathigherswitchingfrequencies

QualifiedaccordingtoJEDECStandard

Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate

orseparatetotempolesisgenerallyrecommended.

Parameter Value Unit

V

650 V

R

210 mΩ

Q

23 nC

ESD Class (HBM) 1C -

Type/OrderingCode Package Marking RelatedLinks

IPD60R210PFD7S PG-TO 252-3 60S210D7 see Appendix A

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Rev.2.0,2019-04-09Final Data Sheet

Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14

Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14

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Rev.2.0,2019-04-09Final Data Sheet

atT

=25°C,unlessotherwisespecified

Values

Min. Typ. Max.

Parameter Symbol Unit Note/TestCondition

Continuous drain current

I

Pulsed drain current

I

- - 42 A T

Avalanche energy, single pulse E

- - 49 mJ I

=3.2A; V

=50V; see table 10

Avalanche energy, repetitive E

- - 0.24 mJ I

=3.2A; V

=50V; see table 10

Avalanche current, single pulse I

- - 3.2 A -

MOSFET dv/dt ruggedness dv/dt - - 120 V/ns V

=0...400V

Storage temperature T

-40 - 150 °C -

Operating junction temperature T

-40 - 150 °C -

Mounting torque - - - - Ncm -

Continuous diode forward current I

- - 16 A T

Diode pulse current

I

- - 42 A T

Maximum diode commutation speed di

=0...400V,I

<=12A,T

Insulation withstand voltage V

- - n.a. V V

=25°C,t=1min