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IPD95R450P7 INFINEON 英飞凌 电子元器件芯片.pdf
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IPD95R450P7 INFINEON 英飞凌 电子元器件芯片
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1
IPD95R450P7
Rev.2.1,2018-06-04Final Data Sheet
tab
1
2
3
DPAK
Drain
Pin 2
Gate
Pin 1
Source
Pin 3
*1
*2
*1: Internal body diode
*2: Integrated ESD diode
MOSFET
950VCoolMOSªP7SJPowerDevice
Thelatest950VCoolMOS™P7seriessetsanewbenchmarkin950V
superjunctiontechnologiesandcombinesbest-in-classperformancewith
stateoftheartease-of-use,resultingfromInfineon’sover18years
pioneeringsuperjunctiontechnologyinnovation.
Features
•Best-in-classFOMR
DS(on)
*E
oss
;reducedQ
g
,C
iss
,andC
oss
•Best-in-classDPAKR
DS(on)
•Best-in-classV
(GS)th
of3VandsmallestV
(GS)th
variationof±0.5V
•IntegratedZenerDiodeESDprotection
•Best-in-classCoolMOS™qualityandreliability
•Fullyoptimizedportfolio
Benefits
•Best-in-classperformance
•Enablinghigherpowerdensitydesigns,BOMsavingsandlower
assemblycosts
•Easytodriveandtoparallel
•BetterproductionyieldbyreducingESDrelatedfailures
•Lessproductionissuesandreducedfieldreturns
•Easytoselectrightpartsforfinetuningofdesigns
Potentialapplications
RecommendedforflybacktopologiesforLEDLighting,lowpower
ChargersandAdapters,SmartMeter,AUXpowerandIndustrialpower.
AlsosuitableforPFCstageinConsumerandSolarapplications.
ProductValidation:Fullyqualifiedacc.JEDECforIndustrialApplications
Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate
orseperatetotempolesisgenerallyrecommended.
Table1KeyPerformanceParameters
Parameter Value Unit
V
DS
@ T
j=25°C
950 V
R
DS(on),max
0.45 Ω
Q
g,typ
35 nC
I
D
14 A
E
oss
@ 500V 2.9 µJ
V
GS(th),typ
3 V
ESD class (HBM) 2 -
Type/OrderingCode Package Marking RelatedLinks
IPD95R450P7 PG-TO 252-3 95R450P7 see Appendix A
2
950VCoolMOSªP7SJPowerDevice
IPD95R450P7
Rev.2.1,2018-06-04Final Data Sheet
TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
3
950VCoolMOSªP7SJPowerDevice
IPD95R450P7
Rev.2.1,2018-06-04Final Data Sheet
1Maximumratings
atT
j
=25°C,unlessotherwisespecified
Table2Maximumratings
Values
Min. Typ. Max.
Parameter Symbol Unit Note/TestCondition
Continuous drain current
1)
I
D
-
-
-
-
14
8.6
A
T
C
=25°C
T
C
=100°C
Pulsed drain current
2)
I
D,pulse
- - 43 A T
C
=25°C
Avalanche energy, single pulse E
AS
- - 29 mJ I
D
=1.8A; V
DD
=50V; see table 10
Avalanche energy, repetitive E
AR
- - 0.36 mJ I
D
=1.8A; V
DD
=50V; see table 10
Application (Flyback) relevant
avalanche current, single pulse
3)
I
AS
- 7.0 - A
measured with standard leakage
inductance of transformer of 10µH
MOSFET dv/dt ruggedness dv/dt - - 100 V/ns V
DS
=0...400V
Gate source voltage (static) V
GS
-20 - 20 V static;
Gate source voltage (dynamic) V
GS
-30 - 30 V AC (f>1 Hz)
Power dissipation P
tot
- - 104 W T
C
=25°C
Storage temperature T
stg
-55 - 150 °C -
Operating junction temperature T
j
-55 - 150 °C -
Mounting torque - - - - Ncm -
Continuous diode forward current I
S
- - 9.6 A T
C
=25°C
Diode pulse current
2)
I
S,pulse
- - 43 A T
C
=25°C
Reverse diode dv/dt
4)
dv/dt - - 1 V/ns
V
DS
=0...400V,I
SD
<=3.6A,T
j
=25°C
see table 8
Maximum diode commutation speed di
F
/dt - - 50 A/µs
V
DS
=0...400V,I
SD
<=3.6A,T
j
=25°C
see table 8
Insulation withstand voltage V
ISO
- - n.a. V V
rms
,T
C
=25°C,t=1min
1)
Limited by T
j,max
. Maximum Duty Cycle D = 0.5
2)
Pulse width t
p
limited by T
j,max
3)
For further explanation please read AN - CoolMOS
TM
700V P7 & 950V P7
4)
Identical low side and high side switch with identical R
G
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