IPB64N25S3-20
OptiMOS
®
-T Power-Transistor
Features
• N-channel - Enhancement mode
• AEC qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green Product (RoHS compliant)
• 100% Avalanche tested
Maximum ratings, at T
j
=25 °C, unless otherwise specified
Parameter Symbol Conditions Unit
Continuous drain current
I
D
T
C
=25 °C, V
GS
=10 V
64 A
T
C
=100°C, V
GS
=10V
1)
46
Pulsed drain current
1)
I
D,pulse
T
C
=25°C
256
Avalanche energy, single pulse
1)
E
AS
I
D
=27A
270 mJ
Avalanche current, single pulse
I
AS
-
27 A
Reverse diode dv /dt dv /dt
6kV/µs
Gate source voltage
V
GS
-±20V
Power dissipation
P
tot
T
C
=25°C
300 W
Operating and storage temperature
T
j
, T
stg
- -55 ... +175 °C
IEC climatic category; DIN IEC 68-1 - - 55/175/56
Value
V
DS
250 V
R
DS(on),max
20
m
I
D
64 A
Product Summary
PG‐TO263‐3‐2
Type Package Marking
IPB64N25S3-20 PG-TO263-3-2 3PN2520
Rev. 1.1 page 1 2014-09-12