IPD5N25S3-430 INFINEON 英飞凌芯片 中文版规格书手册.pdf
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IPD5N25S3-430
OptiMOS
™
-T Power-Transistor
Features
• N-channel - Enhancement mode
• AEC qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green Product (RoHS compliant)
• 100% Avalanche tested
Maximum ratings, at T
j
=25 °C, unless otherwise specified
Parameter Symbol Conditions Unit
Continuous drain current
I
D
T
C
=25°C, V
GS
=10V
5 A
T
C
=100°C, V
GS
=10V
1)
4
Pulsed drain current
1)
I
D,pulse
T
C
=25°C
20
Avalanche energy, single pulse
1)
E
AS
I
D
=1.3A
13 mJ
Avalanche current, single pulse
I
AS
-
1.3 A
Reverse diode dv/dt dv /dt
6 kV/µs
Gate source voltage
V
GS
- ±20 V
Power dissipation
P
tot
T
C
=25°C
41 W
Operating and storage temperature
T
j
, T
stg
- -55 ... +175 °C
IEC climatic category; DIN IEC 68-1 - - 55/175/56
Value
V
DS
250
V
R
DS(on),max
430
mW
I
D
5 A
Product Summary
Type Package Marking
IPD5N25S3-430 PG-TO252-3- 3N25430
PG-TO252-3-313
Rev. 1.0 page 1 2012-10-18
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