Part number Package Type
Standard Pack
Form Quantity
IRF7769L1TRPbF DirectFET Large Can Tape and Reel 4000 “TR” suffix
Note
Applications
RoHS Compliant, Halogen Free
Lead-Free (Qualified up to 260°C Reflow)
Ideal for High Performance Isolated Converter
Primary Switch Socket
Optimized for Synchronous Rectification
Low Conduction Losses
High Cdv/dt Immunity
Low Profile (<0.7mm)
Dual Sided Cooling Compatible
Compatible with existing Surface Mount Techniques
Industrial Qualified
DirectFET™ Power MOSFET
Fig 1. Typical On-Resistance vs. Gate Voltage
DirectFET™ ISOMETRIC
L8
Ordering Information
V
DSS
V
GS
R
DS(on)
100V min
±20V max
2.8m@ 10V
Q
g tot
Q
gd
V
gs(th)
200nC 110nC 2.7V
Applicable DirectFET Outline and Substrate Outline
SB SC M2 M4 L4 L6 L8
Description
The IRF7769L1TRPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET
TM
packaging
to achieve the lowest on-state resistance in a package that has a footprint smaller than a D2PAK and only 0.7 mm profile. The
DirectFET™ package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor
phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods
and processes. The DirectFET™ package allows dual sided cooling to maximize thermal transfer in power systems.
The IRF7769L1TRPbF is optimized for high frequency switching and synchronous rectification applications. The reduced total losses
in the device coupled with the high level of thermal performance enables high efficiency and low temperatures, which are key for
system reliability improvements, and makes this device ideal for high performance power converters.
Absolute Maximum Ratings
Parameter Max. Units
V
DS
Drain-to-Source Voltage 100
V
V
GS
Gate-to-Source Voltage ±20
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ 10V (Silicon Limited) 124
I
D
@ T
C
= 100°C Continuous Drain Current, V
GS
@ 10V (Silicon Limited) 88
I
D
@ T
A
= 25°C Continuous Drain Current, V
GS
@ 10V (Silicon Limited) 20
A
I
DM
Pulsed Drain Current 500
E
AS
Single Pulse Avalanche Energy 260 mJ
I
AR
Avalanche Current 74 A
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ 10V (Package Limited) 375
Notes
Click on this section to link to the appropriate technical paper.
Click on this section to link to the DirectFET Website.
Surface mounted on 1 in. square Cu board, steady state.
TC measured with thermocouple mounted to top (Drain) of part.
Repetitive rating; pulse width limited by max. junction temperature.
Starting T
J
= 25°C, L = 0.09mH, R
G
= 25, I
AS
= 74A.
IRF7769L1TRPbF
Typical values (unless otherwise specified)
1 2016-10-14
D
S
G
D
S
S
S
S S
S
S
2.0 4.0 6.0 8.0 10.0 12.0 14.0 16.0
V
GS
, Gate-to-Source Voltage (V)
0.00
2.00
4.00
6.00
8.00
10.00
12.00
T
y
p
i
c
a
l
R
D
S
(
o
n
)
,
(
m
T
J
= 25°C
T
J
= 125°C
I
D
= 74A
20 40 60 80 100
I
D
, Drain Current (A)
2.80
2.90
3.00
3.10
T
y
p
i
c
a
l
R
D
S
(
o
n
)
(
m
T
A
= 25°C
V
GS
= 8.0V
V
GS
= 7.0V
V
GS
= 10V
V
GS
= 15V
Fig 2. Typical On-Resistance vs. Drain Current
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