BSS306N
OptiMOS
™
2 Small-Signal-Transistor
Features
• N-channel
• Enhancement mode
• Logic level (4.5V rated)
• Avalanche rated
• Qualified according to AEC Q101
• 100% lead-free; RoHS compliant
• Halogen-free according to IEC61249-2-21
Maximum ratings, at T
j
=25 °C, unless otherwise specified
Parameter Symbol Conditions Unit
Continuous drain current
I
D
T
A
=25 °C
2.3 A
T
A
=70 °C
1.8
Pulsed drain current
I
D,pulse
T
A
=25 °C
9
Avalanche energy, single pulse
E
AS
I
D
=2.3 A, R
GS
=25 Ω
10.8 mJ
Reverse diode dv /dt dv /dt
I
D
=2.3 A, V
DS
=16 V,
di /dt =200 A/µs,
T
j,max
=150 °C
6 kV/µs
Gate source voltage
V
GS
±20 V
Power dissipation
P
tot
T
A
=25 °C
W
Operating and storage temperature
T
j
, T
stg
-55 ... 150 °C
ESD Class JESD22-A114 -HBM 0 (<250V)
Soldering Temperature 260 °C
IEC climatic category; DIN IEC 68-1 55/150/56
Value
0.5
PG-SOT23
3
1
2
Type Package Tape and Reel Information Marking Lead Free Packing
BSS306N SOT23 H6327: 3000 pcs/ reel SWs Yes Non dry
V
DS
30 V
R
DS(on),max
V
GS
=10 V 57
mΩ
V
GS
=4.5 V 93
I
D
2.3 A
Product Summary
Rev 2.3 page 1 2011-07-06
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