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TI-AMC1200.pdf
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0V 250mV
2.55V
2V
1.29V
2V
5V
3.3V
GND1 GND2
VDD1 VDD2
VOUTP
VOUTN
VINP
VINN
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An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
English Data Sheet: SBAS542
AMC1200
,
AMC1200B
ZHCS161D –APRIL 2011–REVISED JULY 2015
AMC1200/B 全全差差分分隔隔离离放放大大器器
1
1 特特性性
1
• 针对分流电阻进行优化的 ±250mV 输入电压范围
• 极低非线性度:5V 时最大值为 0.075%
• 低偏移误差:最大值为 1.5mV
• 低噪声:3.1mV
RMS
(典型值)
• 低高侧电源电流:
5V 时最大值为 8mA
• 输入带宽:最小值为 60kHz
• 固定增益:8(精度为 0.5%)
• 高共模抑制比:108dB
• 3.3V 低侧工作电压
• 经认证的电流隔离:
– 已通过 UL1577 和 VDE V 0884-10 批准
– 隔离电压:4250 V
PEAK
(AMC1200B)
– 工作电压:1200 V
PEAK
– 瞬态抗扰度:10kV/µs(最小值)
• 在额定工作电压下使用寿命通常为 10 年(请参阅
应用报告)
• 可在扩展工业温度范围内运行
2 应应用用
• 在下列应用中基于分流电阻器的电流感测:
– 电机控制
– 绿色环保能源
– 变频器
– 不间断电源
3 说说明明
AMC1200 和 AMC1200B 是高精度隔离放大器,通过
磁场抗扰度较高的二氧化硅 (SiO
2
) 隔离层隔离输出和
输入电路。该隔离层经 UL1577 与 VDE V 0884-10 标
准认证,可提供高达 4250 V
PEAK
(AMC1200B) 或
4000 V
PEAK
(AMC1200) 的电流隔离。通过与隔离电源
配合使用,这些器件可防止共模高电压线路上的噪声电
流进入本地接地并干扰或损害敏感电路。
AMC1200 或 AMC1200B 的输入针对直接连接至分流
电阻器或其它低电压电平信号源进行了优化。该器件性
能优异,支持精确电流控制,从而降低系统级功耗
(尤其在电机控制应用中)并减少扭矩纹波。可自动将
输出信号的共模电压调节为 3V 或
5V 低侧电源电压。
AMC1200 和 AMC1200B 在扩展工业温度范围内(–
40°C 到 105°C)完全额定运行,采用宽体 8 引脚小外
形尺寸集成电路 (SOIC) (DWV) 封装以及 gullwing 8
(DUB) 封装。
器器件件信信息息
(1)
器器件件型型号号 封封装装 封封装装尺尺寸寸((标标称称值值))
AMC1200 和
AMC1200B
SOP (8) 9.50mm × 6.57mm
SOIC (8) 5.85mm × 7.50mm
(1) 要了解所有可用封装,请见数据表末尾的可订购产品附录。
简简化化电电路路原原理理图图
2
AMC1200
,
AMC1200B
ZHCS161D –APRIL 2011–REVISED JULY 2015
www.ti.com.cn
Copyright © 2011–2015, Texas Instruments Incorporated
目目录录
1 特特性性.......................................................................... 1
2 应应用用.......................................................................... 1
3 说说明明.......................................................................... 1
4 修修订订历历史史记记录录 ........................................................... 2
5 Pin Configuration and Functions......................... 3
6 Specifications......................................................... 4
6.1 Absolute Maximum Ratings ..................................... 4
6.2 ESD Ratings.............................................................. 4
6.3 Recommended Operating Conditions....................... 4
6.4 Thermal Information.................................................. 4
6.5 Electrical Characteristics........................................... 5
6.6 Typical Characteristics.............................................. 6
7 Detailed Description............................................ 11
7.1 Overview ................................................................. 11
7.2 Functional Block Diagram ....................................... 11
7.3 Feature Description................................................. 11
7.4 Device Functional Modes........................................ 13
8 Application and Implementation ........................ 15
8.1 Application Information............................................ 15
8.2 Typical Applications ................................................ 15
9 Power Supply Recommendations...................... 18
10 Layout................................................................... 18
10.1 Layout Guidelines ................................................. 18
10.2 Layout Example .................................................... 19
11 器器件件和和文文档档支支持持 ..................................................... 20
11.1 文档支持................................................................ 20
11.2 相关链接................................................................ 20
11.3 社区资源................................................................ 20
11.4 商标 ....................................................................... 20
11.5 静电放电警告......................................................... 20
11.6 Glossary................................................................ 20
12 机机械械、、封封装装和和可可订订购购信信息息....................................... 21
4 修修订订历历史史记记录录
注:之前版本的页码可能与当前版本有所不同。
Changes from Revision C (September 2013) to Revision D Page
• 已添加 ESD
额定值
表,
特性 描述
部分,
器件功能模式
,
应用和实施
部分,
电源相关建议
部分,
布局
部分,
器件和文
档支持
部分以及
机械、封装和可订购信息
部分........................................................................................................................ 1
Changes from Revision B (August 2012) to Revision C Page
• 已删除 器件图 ......................................................................................................................................................................... 1
• 已添加 DWV (SOIC-9) 封装至文档 ......................................................................................................................................... 1
• 已更改
部分的
最后一段........................................................................................................................................................... 1
• Added DWV pin out drawing .................................................................................................................................................. 3
• Added DWV column to Thermal Information table................................................................................................................. 4
• Added row for DWV package to L(I01) and L(I02) parameters in Package Characteristics table ....................................... 12
Changes from Revision A (August 2011) to Revision B Page
• 已更改隔离电压特性着重号..................................................................................................................................................... 1
• 已添加 AMC1200B 器件至数据表 ........................................................................................................................................... 1
• Changed title for Figure 25................................................................................................................................................... 10
• Changed CTI parameter minimum value in Electrical Characteristics from ≥ 175 to ≥ 400................................................. 12
Changes from Original (April 2011) to Revision A Page
• Changed sign for maximum junction temperature from minus to plus (typo)......................................................................... 4
• Added "0.5-V step" to test condition for Rise/fall time parameter .......................................................................................... 5
• Changed Figure 12................................................................................................................................................................. 6
• Changed Figure 13................................................................................................................................................................. 7
• Changed surge immunity parameter from ±4000 to ±6000.................................................................................................. 12
1
2
3
4
8
7
6
5
VDD2
VOUTP
VOUTN
GND2
VDD1
VINP
VINN
GND1
1
2
3
4
8
7
6
5
VDD2
VOUTP
VOUTN
GND2
VDD1
VINP
VINN
GND1
3
AMC1200
,
AMC1200B
www.ti.com.cn
ZHCS161D –APRIL 2011–REVISED JULY 2015
Copyright © 2011–2015, Texas Instruments Incorporated
5 Pin Configuration and Functions
DUB Package
8-Pin SOP
Top View
DWV Package
8-Pin SOIC
Top View
Pin Functions
PIN
I/O DESCRIPTION
NO. NAME
1 VDD1 Power High-side power supply
2 VINP Analog input Noninverting analog input
3 VINN Analog input Inverting analog input
4 GND1 Power High-side analog ground
5 GND2 Power Low-side analog ground
6 VOUTN Analog output Inverting analog output
7 VOUTP Analog output Noninverting analog output
8 VDD2 Power Low-side power supply
4
AMC1200
,
AMC1200B
ZHCS161D –APRIL 2011–REVISED JULY 2015
www.ti.com.cn
Copyright © 2011–2015, Texas Instruments Incorporated
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, and functional operation of the device at these or any other conditions beyond those indicated is not implied. Exposure to absolute
maximum rated conditions for extended periods may affect device reliability.
6 Specifications
6.1 Absolute Maximum Ratings
Over the operating ambient temperature range, unless otherwise noted.
(1)
MIN MAX UNIT
Supply voltage, VDD1 to GND1 or VDD2 to GND2 –0.5 6 V
Analog input voltage at VINP, VINN GND1 – 0.5 VDD1 + 0.5 V
Input current to any pin except supply pins –10 10 mA
Maximum junction temperature, T
J
Max 150 °C
Storage Temperature, T
stg
–65 150 °C
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
6.2 ESD Ratings
VALUE UNIT
V
(ESD)
Electrostatic discharge
Human-body model (HBM) JEDEC standard 22, test method A114-
C.01
(1)
±2500
V
Charged-device model (CDM), per JEDEC specification JESD22-
C101
(2)
±1000
6.3 Recommended Operating Conditions
over operating free-air temperature range (unless otherwise noted)
MIN NOM MAX UNIT
T
A
Operating ambient temperature range –40 105 °C
VDD1 High-side power supply 4.5 5 5.5 V
VDD2 Low-side power supply 2.7 5 5.5 V
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report, SPRA953.
6.4 Thermal Information
THERMAL METRIC
(1)
AMC1200, AMC1200B
UNITDUB (SOP) DWV (SOIC)
8 PINS 8 PINS
R
θJA
Junction-to-ambient thermal resistance 75.1 102.8 °C/W
R
θJC(top)
Junction-to-case (top) thermal resistance 61.6 49.8 °C/W
R
θJB
Junction-to-board thermal resistance 39.8 56.6 °C/W
ψ
JT
Junction-to-top characterization parameter 27.2 16 °C/W
ψ
JB
Junction-to-board characterization parameter 39.4 55.2 °C/W
5
AMC1200
,
AMC1200B
www.ti.com.cn
ZHCS161D –APRIL 2011–REVISED JULY 2015
Copyright © 2011–2015, Texas Instruments Incorporated
6.5 Electrical Characteristics
All minimum/maximum specifications at T
A
= –40°C to 105°C and within the specified voltage range, unless otherwise noted.
Typical values are at T
A
= 25°C, VDD1 = 5 V, and VDD2 = 3.3 V.
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
INPUT
Maximum input voltage before
clipping
VINP – VINN ±320 mV
Differential input voltage VINP – VINN –250 250 mV
V
CM
Common mode operating range –0.16 VDD1 V
V
OS
Input offset voltage –1.5 ±0.2 1.5 mV
TCV
OS
Input offset thermal drift –10 ±1.5 10 µV/K
CMRR Common mode rejection ratio
V
IN
from 0 V to 5 V at 0 Hz 108 dB
V
IN
from 0 V to 5 V at 50 kHz 95 dB
C
IN
Input capacitance to GND1 VINP or VINN 3 pF
C
IND
Differential input capacitance 3.6 pF
R
IN
Differential input resistance 28 kΩ
Small-signal bandwidth 60 100 kHz
OUTPUT
Nominal gain 8
G
ERR
Gain error
Initial, at T
A
= 25°C –0.5% ±0.05% 0.5%
–1% ±0.05% 1%
TCG
ERR
Gain error thermal drift ±56 ppm/K
Nonlinearity
4.5 V ≤ VDD2 ≤ 5.5 V –0.075% ±0.015% 0.075%
2.7 V ≤ VDD2 ≤ 3.6 V –0.1% ±0.023% 0.1%
Nonlinearity thermal drift 2.4 ppm/K
Output noise VINP = VINN = 0 V 3.1 mV
RMS
PSRR Power-supply rejection ratio
vs VDD1, 10-kHz ripple 80 dB
vs VDD2, 10-kHz ripple 61 dB
Rise/fall time 0.5-V step, 10% to 90% 3.66 6.6 µs
V
IN
to V
OUT
signal delay
0.5-V step, 50% to 10%, unfiltered output 1.6 3.3 µs
0.5-V step, 50% to 50%, unfiltered output 3.15 5.6 µs
0.5-V step, 50% to 90%, unfiltered output 5.26 9.9 µs
CMTI Common mode transient immunity V
CM
= 1 kV 10 15 kV/µs
Output common mode voltage
2.7 V ≤ VDD2 ≤ 3.6 V 1.15 1.29 1.45 V
4.5 V ≤ VDD2 ≤ 5.5 V 2.4 2.55 2.7 V
Short circuit current 20 mA
R
OUT
Output resistance 2.5 Ω
POWER SUPPLY
VDD1 High-side supply voltage 4.5 5 5.5 V
VDD2 Low-side supply voltage 2.7 5 5.5 V
I
DD1
High-side supply current 5.4 8 mA
I
DD2
Low-side supply current
2.7 V < VDD2 < 3.6 V 3.8 6 mA
4.5 V < VDD2 < 5.5 V 4.4 7 mA
P
DD1
High-side power dissipation 27 44 mW
P
DD2
Low-side power dissipation
2.7 V < VDD2 < 3.6 V 11.4 21.6 mW
4.5 V < VDD2 < 5.5 V 22 38.5 mW
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