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"TI-TPIC6C596.pdf" 本文档主要介绍了TI公司的TPIC6C596设备，该设备是一个8位移寄存器，具有低电阻、低电流和高输出电流的特点，适用于中等负载电路、继电器、磁阀和低电压负载等应用。下面详细介绍该设备的特点和应用。特点 1. 低电阻（RDS(on)）：TPIC6C596设备具有低电阻特点，电阻值仅为7Ω（典型值），使其在高频率应用中的energy loss最小化。 2. 高输出电流：设备具有高输出电流能力，输出电流可达250mA，满足中等负载电路的需求。 3. 掉电保护：TPIC6C596设备具有内置的电压clamp，保护输出端口免受电压 transient干扰的影响。 4. ESD保护：设备具有2500 V的ESD保护能力，防止静电干扰对设备的影响。 5. 低功率消耗：TPIC6C596设备具有低功率消耗特点，适用于低功率应用场景。 6. 高输出电压：设备的输出电压可达33 V，适用于中等电压负载应用。应用 1. 仪器集群：TPIC6C596设备适用于仪器集群应用，例如仪器仪表、自动控制系统等。 2. 告示灯控制：设备适用于告示灯控制应用，例如汽车告示灯、工业告示灯等。 3. LED照明控制：TPIC6C596设备适用于LED照明控制应用，例如汽车LED照明、工业LED照明等。 4. 继电器驱动：设备适用于继电器驱动应用，例如汽车继电器、工业继电器等。 5. 汽车应用：TPIC6C596设备适用于汽车应用，例如汽车告示灯、汽车LED照明、汽车继电器等。技术参数 1. 输出电流：250mA 2. 输出电压：33 V 3. 电阻（RDS(on)）：7 Ω（典型值） 4. ESD保护：2500 V 5. 工作温度：-40°C至125°C 6. 存储温度：-65°C至150°C 结论 TPIC6C596设备是一款功能强大且灵活的8位移寄存器，适用于中等负载电路、继电器、磁阀和低电压负载等应用。该设备具有低电阻、低电流和高输出电流的特点，且具有ESD保护和低功率消耗的特点，非常适用于汽车、工业和仪器等领域的应用。

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TPIC6C596

SLIS093D –MARCH 2000–REVISED MARCH 2015

TPIC6C596 Power Logic 8-Bit Shift Register

1 Features 3 Description

The TPIC6C596 device is a monolithic, medium-

• Low R

DS(on)

, 7 Ω (Typical)

voltage, low-current, 8-bit shift register designed for

• Avalanche Energy, 30 mJ

use in systems that require relatively moderate load

• Eight Power DMOS Transistor Outputs of 100-mA

power such as LEDs. The device contains a built-in

Continuous Current

voltage clamp on the outputs for inductive transient

protection. Power driver applications include relays,

• 250-mA Current Limit Capability

solenoids, and other low-current or medium-voltage

• ESD Protection, 2500 V

loads.

• Output Clamp Voltage, 33 V

This device contains an 8-bit serial-in, parallel-out

• Enhanced Cascading for Multiple Stages

shift register that feeds an 8-bit D-type storage

• All Registers Cleared With Single Input

storage registers on the rising edge of the shift

• Low Power Consumption

respectively. The storage register transfers data to

2 Applications

the output buffer when shift register clear (CLR) is

• Instrumentation Clusters

high. When CLR is low, all registers in the device are

cleared. When output enable (G) is held high, all data

• Tell-Tale Lamps

in the output buffers is held low and all drain outputs

• LED Illumination and Controls

are off. When G is held low, data from the storage

• Automotive Relay or Solenoids Drivers

data in the output buffers is low, the DMOS transistor

Logic Symbol

outputs are off. When data is high, the DMOS

transistor outputs have sink-current capability.

The serial output (SER OUT) is clocked out of the

device on the falling edge of SRCK to provide

additional hold time for cascaded applications. This

will provide improved performance for applications

where clock signals may be skewed, devices are not

located near one another, or the system must tolerate

electromagnetic interference.

Outputs are low-side, open-drain DMOS transistors

with output ratings of 33 V and 100 mA continuous

sink-current capability. Each output provides a 250-

mA maximum current limit at T

= 25°C. The current

limit decreases as the junction temperature increases

for additional device protection. The device also

provides up to 2500 V of ESD protection when tested

using the human body model and the 200-V machine

model.

The TPIC6C596 device is characterized for operation

This symbol is in accordance with

over the operating case temperature range of −40°C

ANSI/IEEE Std 91-1984 and IEC

to 125°C.

Publication 617-12.

Device Information

(1)

PART NUMBER PACKAGE BODY SIZE (NOM)

SOIC (16) 9.90 mm × 3.91 mm

TPIC6C596 PDIP (16) 19.30 mm × 6.35 mm

TSSOP (16) 5.00 mm × 4.40 mm

(1) For all available packages, see the orderable addendum at

the end of the data sheet.

An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,

intellectual property matters and other important disclaimers. PRODUCTION DATA.

TPIC6C596

SLIS093D –MARCH 2000–REVISED MARCH 2015

www.ti.com

Table of Contents

8.2 Functional Block Diagram ....................................... 12

1 Features.................................................................. 1

8.3 Feature Description................................................. 13

2 Applications ........................................................... 1

8.4 Device Functional Modes........................................ 13

3 Description ............................................................. 1

9 Application and Implementation ........................ 14

4 Revision History..................................................... 2

9.1 Application Information............................................ 14

5 Pin Configuration and Functions......................... 3

9.2 Typical Application ................................................. 14

6 Specifications......................................................... 4

10 Power Supply Recommendations ..................... 17

6.1 Absolute Maximum Ratings ...................................... 4

11 Layout................................................................... 17

6.2 ESD Ratings ............................................................ 4

11.1 Layout Guidelines ................................................. 17

6.3 Recommended Operating Conditions....................... 4

11.2 Layout Example .................................................... 18

6.4 Thermal Information.................................................. 5

11.3 Thermal Considerations........................................ 19

6.5 Electrical Characteristics........................................... 5

12 Device and Documentation Support ................. 20

6.6 Switching Characteristics.......................................... 6

12.1 Trademarks........................................................... 20

6.7 Typical Characteristics.............................................. 7

12.2 Electrostatic Discharge Caution............................ 20

7 Parameter Measurement Information .................. 9

12.3 Glossary................................................................ 20

8 Detailed Description ............................................ 12

13 Mechanical, Packaging, and Orderable

8.1 Overview ................................................................. 12

Information ........................................................... 20

4 Revision History

Changes from Revision C (April 2005) to Revision D Page

• Added ESD Ratings table, Feature Description section, Device Functional Modes, Application and Implementation

section, Power Supply Recommendations section, Layout section, Device and Documentation Support section, and

Mechanical, Packaging, and Orderable Information section ................................................................................................. 1

Product Folder Links: TPIC6C596

TPIC6C596

SLIS093D –MARCH 2000–REVISED MARCH 2015

www.ti.com

6 Specifications

6.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)

(1)

MIN MAX UNIT

Logic supply voltage

(2)

–0.3 7 V

Logic input voltage –0.3 7 V

Power DMOS drain-to-source voltage

(3)

–0.3 33 V

Continuous source-to-drain diode anode current 250 mA

Pulsed source-to-drain diode anode current

(4)

500 mA

Pulsed drain current, each output, all outputs on, T

= 25°C

(4)

250 mA

Continuous drain current, each output, all outputs on, T

= 25°C

(4)

100 mA

Peak drain current single output, T

= 25°C

(4)

250 mA

Single-pulse avalanche energy (see Figure 11) 30 mJ

Avalanche current

(5)

200 mA

Continuous total dissipation See Thermal Information

Operating case temperature –40 125 °C

Operating virtual junction temperature –40 150 °C

stg

Storage temperature –65 150 °C

(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings

only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended

Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

(2) All voltage values are with respect to GND.

(3) Each power DMOS source is internally connected to GND.

(4) Pulse duration ≤ 100 μs and duty cycle ≤ 2%.

(5) DRAIN supply voltage = 15 V, starting junction temperature (T

) = 25°C, L = 1.5 H, I

= 200 mA (see Figure 11).

6.2 ESD Ratings

VALUE UNIT

(ESD)

Electrostatic discharge Human body model (HBM), per ANSI/ESDA/JEDEC JS-001, all pins

(1)

±2500 V

(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.

6.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)

MIN NOM MAX UNIT

Logic supply voltage 4.5 5.5 V

High-level input voltage 0.85 V

Low-level input voltage 0.15 V

Pulsed drain output current, T

= 25°C, V

= 5 V, all outputs on

(1) (2)

(see Figure 7) 250 mA

Setup time, SER IN high before SRCKM ↑ (see Figure 9) 15 ns

Hold time, SER IN high after SRCKM ↑, (see Figure 9) 15 ns

Pulse duration (see Figure 9) 40 ns

Operating case temperature –40 125 °C

(1) Pulse duration ≤ 100 μs and duty cycle ≤ 2%.

(2) Technique should limit T

− T

to 10°C maximum.

Product Folder Links: TPIC6C596

TPIC6C596

www.ti.com

SLIS093D –MARCH 2000–REVISED MARCH 2015

6.4 Thermal Information

TPIC6C596

THERMAL METRIC

(1)

PW (TSSOP) D (SOIC) N (PDIP) UNIT

16 PINS 16 PINS 16 PINS

θJA

Junction-to-ambient thermal resistance 109.7 83.7 51.5

θJC(

Junction-to-case (top) thermal resistance 44.6 45.1 38.3

top)

°C/W

θJB

Junction-to-board thermal resistance 54.8 41.2 31.4

Junction-to-top characterization parameter 5 12.1 23.6

Junction-to-board characterization parameter 54.2 40.9 31.3

(1) For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.

6.5 Electrical Characteristics

over operating free-air temperature range (unless otherwise noted)

PARAMETER TEST CONDITIONS MIN TYP MAX UNIT

Drain-to-source breakdown

(BR)DSX

= 1 mA 33 37 V

voltage

Source-to-drain diode forward

= 100 mA 0.85 1.2 V

voltage

= − 20 µA, V

= 4.5 V 4.4 4.49

High-level output voltage, SER

OUT

= − 4 mA, V

= 4.5 V 4 4.2

= 20 µA, V

= 4.5 V 0.005 0.1

Low-level output voltage, SER

OUT

= 4 mA, V

= 4.5 V 0.3 0.5

High-level input current V

= 5.5 V, V

= V

1 µA

Low-level input current V

= 5.5 V, V

= 0 –1 µA

All outputs off 20 200

Logic supply current V

= 5.5 V µA

All outputs on 150 500

SRCK

= 5 MHz, C

= 30 pF,

Logic supply current at

CC(FRQ)

1.2 5 mA

frequency

All outputs off, See Figure 9 and Figure 2

DS(on)

= 0.5 V, I

= I

Nominal current 90 mA

= 85°C See

(1)(2)(3)

= 30 V, V

= 5.5 V 0.1 0.2

DSX

OFF-state drain current µA

= 30 V

= 5.5 V 0.15 0.3

= 125°C

= 50 mA,

6.5 9

= 4.5 V

= 50 mA,

Static drain-source ON-state See

(1)

and

(2)

and Figure 3

DS(on)

= 125°C, 9.9 12 Ω

resistance and Figure 4

= 4.5 V

= 100 mA,

9.9 10

= 4.5 V

(1) Technique should limit T

− T

to 10°C maximum.

(2) These parameters are measured with voltage-sensing contacts separate from the current-carrying contacts.

(3) Nominal current is defined for a consistent comparison between devices from different sources. It is the current that produces a voltage

drop of 0.5 V at T

= 85°C.

Product Folder Links: TPIC6C596

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