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TI-BQ26100.pdf
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TI-BQ26100.pdf
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SDQ
P–
C1
0.1 Fm
+
VSS
CO
BAT
OC
DO
bq26100
SDQ
VSS
VSS
PWR
VSS
VSS
R1
4.7kW
P+
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An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
bq26100
SLUS696C –JUNE 2006–REVISED FEBRUARY 2019
bq26100 SHA-1/HMAC-based security and authentication IC with an SDQ interface
1
1 Features
1
• Provides authentication of battery packs through
SHA-1 engine based HMAC
• 160-byte one-time programmable (OTP), 16-bytes
EEPROM
• Internal time-base eliminates external crystal
oscillator
• Low-power operating modes:
– Active: < 50 μA
– Sleep: 8 μA typical
• Single-wire SDQ interface
• Powers directly from the communication bus
• 6-lead VSON package
2 Applications
• Cellular phones
• PDA and smart phones
• MP3 players
• Digital cameras
• Internet appliances
• Handheld devices
3 Description
The bq26100 device provides a method to
authenticate battery packs, ensuring that only packs
manufactured by authorized sub-contractors are used
in the end application. The security is achieved using
the SHA-1 hash function inside the widely adopted
keyed-hash message authentication code (HMAC)
construction. A unique 128-bit key is stored in each
bq26100 device, allowing the host to authenticate
each pack.
The bq26100 device communicates to the system
over a simple one-wire bi-directional serial interface.
The 5-kbits/s SDQ bus interface reduces
communications overhead in the external
microcontroller. The bq26100 device also derives
power over the SDQ bus line via an external
capacitor.
Device Information
(1)
PART NUMBER PACKAGE BODY SIZE (NOM)
bq26100 VSON (6) 3.00 mm × 3.00 mm
(1) For all available packages, see the orderable addendum at
the end of the data sheet.
Simplified Schematic
2
bq26100
SLUS696C –JUNE 2006–REVISED FEBRUARY 2019
www.ti.com
Product Folder Links: bq26100
Submit Documentation Feedback Copyright © 2006–2019, Texas Instruments Incorporated
Table of Contents
1 Features.................................................................. 1
2 Applications ........................................................... 1
3 Description ............................................................. 1
4 Revision History..................................................... 2
5 Pin Configuration and Functions......................... 3
6 Specifications......................................................... 3
6.1 Absolute Maximum Ratings ...................................... 3
6.2 ESD Ratings ............................................................ 3
6.3 Recommended Operating Conditions....................... 3
6.4 Thermal Information ................................................. 4
6.5 Electrical Characteristics........................................... 4
6.6 Standard Serial Communication (SDQ) Timing ....... 4
6.7 OTP Programming Specifications............................. 5
6.8 Typical Characteristics.............................................. 6
7 Detailed Description .............................................. 7
7.1 Overview ................................................................... 7
7.2 Functional Block Diagram ......................................... 7
7.3 Feature Description................................................... 8
7.4 Device Functional Modes.......................................... 9
7.5 Programming ............................................................ 9
7.6 Register Maps......................................................... 19
8 Application and Implementation ........................ 22
8.1 Application Information............................................ 22
8.2 Typical Application ................................................. 22
9 Power Supply Recommendations...................... 23
10 Layout................................................................... 24
10.1 Layout Guidelines ................................................. 24
10.2 Layout Example .................................................... 24
11 Device and Documentation Support ................. 25
11.1 Receiving Notification of Documentation Updates 25
11.2 Community Resources.......................................... 25
11.3 Trademarks........................................................... 25
11.4 Electrostatic Discharge Caution............................ 25
11.5 Glossary................................................................ 25
12 Mechanical, Packaging, and Orderable
Information ........................................................... 25
4 Revision History
NOTE: Page numbers for previous revisions may differ from page numbers in the current version.
Changes from Revision B (June 2015) to Revision C Page
• Changed the pinout view label in Pin Configuration and Functions ...................................................................................... 3
Changes from Revision A (February 2007) to Revision B Page
• Changed SON to VSON ........................................................................................................................................................ 1
• Added ESD Rating table, Feature Description section, Device Functional Modes, Application and Implementation
section, Power Supply Recommendations section, Layout section, Device and Documentation Support section, and
Mechanical, Packaging, and Orderable Information section. ................................................................................................ 1
• Changed formatting of code ................................................................................................................................................ 12
2.3mm
4
6
5
3
1
2
Exposed
ThermalPad
3mm
3mm
1.6mm
3
bq26100
www.ti.com
SLUS696C –JUNE 2006–REVISED FEBRUARY 2019
Product Folder Links: bq26100
Submit Documentation FeedbackCopyright © 2006–2019, Texas Instruments Incorporated
5 Pin Configuration and Functions
DRP Package
6-Pin VSON
Bottom View
Pin Functions
PIN
I/O DESCRIPTION
NAME NO.
PWR 1 I/O Power capacitor connection
SDQ 6 I/O Single-wire SDQ interface to host
VSS 2, 3, 4, 5 I Ground
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended
Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
6 Specifications
6.1 Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted)
(1)
MIN MAX UNIT
Supply voltage (SDQ all with respect to VSS) –0.3 7.7 V
Output current (SDQ) 5 mA
T
A
Operating free-air temperature –40 85 °C
T
J
Operating junction temperature –40 150 °C
T
stg
Storage temperature –65 150 °C
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
6.2 ESD Ratings
VALUE UNIT
V
(ESD)
Electrostatic
discharge
Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001
(1)
2000
V
Charged-device model (CDM), per JEDEC specification JESD22-C101
(2)
1500
6.3 Recommended Operating Conditions
over operating free-air temperature range (unless otherwise noted)
MIN MAX UNIT
V
sdq
Pull-up voltage 2.5 V
T
J
Operating free-air temperature –40 °C
4
bq26100
SLUS696C –JUNE 2006–REVISED FEBRUARY 2019
www.ti.com
Product Folder Links: bq26100
Submit Documentation Feedback Copyright © 2006–2019, Texas Instruments Incorporated
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics.
6.4 Thermal Information
THERMAL METRIC
(1)
BQ26100
UNITDRP (VSON)
6 PINS
R
θJA
Junction-to-ambient thermal resistance 51.7 °C/W
R
θJC(top)
Junction-to-case (top) thermal resistance 68.9 °C/W
R
θJB
Junction-to-board thermal resistance 24.9 °C/W
ψ
JT
Junction-to-top characterization parameter 1.7 °C/W
ψ
JB
Junction-to-board characterization parameter 25.1 °C/W
R
θJC(bot)
Junction-to-case (bottom) thermal resistance 4.6 °C/W
6.5 Electrical Characteristics
all parameters over operating free-air temperature and supply voltage range (unless otherwise noted) (memory programming
and authentication were tested with R1 = 4.7 kΩ, C1 = 0.1 μF over pullup voltage range)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
Power up communication delay Power capacitor charge time 100 ms
I
sleep
Sleep current 8 11 μA
I
sdq(Vsdq)
V
sdq
Current V
sdq
≥ V
sdq(min)
50 μA
OTP Memory programming voltage 6.8 7 7.7 V
OTP Memory programming time 100 μs/byte
EEPROM Programming current (peak current) 83 μA
EEPROM Peak current duration 100 μs
EEPROM Programming time 50 ms
SDQ
V
IL
Input low-level voltage 0.63 V
I
OL
Output low sink current V
OL
= 0.4 V 1 mA
6.6 Standard Serial Communication (SDQ) Timing
over recommended operating temperature and supply voltage range (unless otherwise noted) (See Figure 1)
MIN NOM MAX UNIT
t
RSTL
Reset time – low 480 μs
t
RSTH
Reset time – high 480 μs
t
PDL
Presence detect – low 60 240 μs
t
PDH
Presence detect – high 15 60 μs
t
REC
Recovery time 1 μs
t
SLOT
Host bit window 60 120 μs
t
LOW1
Host sends 1 1 13 μs
t
LOW0
Host sends 0 60 120 μs
t
LOWR
Host read bit start 1 13 μs
t
SLOT
bq26100 bit window 60 120 μs
t
SU
bq26100 data setup 1 μs
t
RDV
bq26100 data valid exactly 15 μs
t
RELEASE
bq26100 data release 0 15 45 μs
t
PDH
t
PDL
t
RSTL
t
RSTH
(c)bq26100TransmittedBitTiming
(a)ResetandPresenceTiming
(b)HostTransmittedBitTiming
t
LOW1
t
LOW0 SLOT
&t
t
SU
t
REC
t
RELEASE
t
REC
t
SLOT
t
RDV
t
LOWR
5
bq26100
www.ti.com
SLUS696C –JUNE 2006–REVISED FEBRUARY 2019
Product Folder Links: bq26100
Submit Documentation FeedbackCopyright © 2006–2019, Texas Instruments Incorporated
6.7 OTP Programming Specifications
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
t
pon
Program setup time 2 μs
t
rise
Pulse rise time 1 10 μs
t
prog
Pulse high time Single byte programming 300 μs
Key programming 3 μs
t
fall
Pulse fall time 1 10 μs
Figure 1. SDQ Timing Diagrams
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