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COMMITTEE LETTER BALLOT
Solid State Technology Association
3103 North 10th Street
Arlington, Virginia 22201
Ballot Template Version Draft rev. 8/11
© JEDEC 2011
Committee: JC42.3C
Committee Item Number: 1716.78E
Subject: Proposed DDR4 Full spec update(79-4D) Rev1
Background: In Dec ‘18 committee meeting, DDR4 TG was authorized to issue a ballot
for DDR4 full spec update. This ballot is to update some missing pass and
hold ballots in 2016, 2017, and to reflect newly passed ballots since Sep
‘18. Only red text is updated portion from previous full spec(79-4C), which
covers following passed ballots:
RB16-317, Rounding Algorithm,
RB16-348, Industrial Temperature,
RB18-509, tRFC update for 16Gb device,
RB19-075, Speed Bin Table update,
RB17-123, CT mode input levels,
RB18-303, Overshoot and Undershoot Spec (Fast track ballot),
RB18-304, duty cycle jitter removal (Fast track ballot),
RB18-305, Command Address Setup Hold Derating Spec (Fast track ballot),
RB18-419, DDR4 Dram Data Timing.
(update 4/30/19: Table #3 CL25 update / MR6 description update / Speed Bin
Table notes and typos corrections / Table 134 and 135 update)
Keywords: DDR4,JESD79-4, JESD79-4D
Proposed DDR4 Full spec update(79-4C) Item No. 1716.78D
1. Scope .........................................................................................................................................................................6
2. DDR4 SDRAM Package Pinout and Addressing 7
2.1 DDR4 SDRAM Row for X4, X8 and X16 ...............................................................................................................7
2.2 DDR4 SDRAM Ball Pitch........................................................................................................................................7
2.3 DDR4 SDRAM Columns for X4,X8 and X16 ..........................................................................................................7
2.4 DDR4 SDRAM X4/8 Ballout using MO-207......................................................................................................... 7
2.5 DDR4 SDRAM X16 Ballout using MO-207.............................................................................................................8
2.6 DDR4 SDRAM X32 Ballout using MO-XXX..........................................................................................................10
2.7 Pinout Description ................................................................................................................................................11
2.8 DDR4 SDRAM Addressing ...................................................................................................................................13
2.9 DDP Single Rank(SR) x16 from two x8................................................................................................................14
3. Functional Description 16
3.1 Simplified State Diagram ..................................................................................................................................16
3.2 Basic Functionality................................................................................................................................................17
3.3 RESET and Initialization Procedure .....................................................................................................................17
3.3.1 Power-up Initialization Sequence 17
3.3.2 VDD Slew rate at Power-up Initialization Sequence 19
3.3.3 Reset Initialization with Stable Power 20
3.4 Register Definition ................................................................................................................................................21
3.4.1 Programming the mode registers 21
3.5 Mode Register ......................................................................................................................................................24
4. DDR4 SDRAM Command Description and Operation 35
4.1 Command Truth Table ..........................................................................................................................................35
4.2 CKE Truth Table....................................................................................................................................................36
4.3 Burst Length, Type and Order ..............................................................................................................................37
4.3.1 BL8 Burst order with CRC Enabled 37
4.4 DLL-off Mode & DLL on/off Switching procedure.................................................................................................38
4.4.1 DLL on/off switching procedure 38
4.4.2 DLL “on” to DLL “off” Procedure 38
4.4.3 DLL “off” to DLL “on” Procedure 39
4.5 DLL-off Mode........................................................................................................................................................40
4.6 Input Clock Frequency Change ............................................................................................................................41
4.7 Write Leveling.......................................................................................................................................................43
4.7.1 DRAM setting for write leveling & DRAM termination function in that mode 44
4.7.2 Procedure Description 45
4.7.3 Write Leveling Mode Exit 46
4.8 Temperature controlled Refresh modes ...............................................................................................................46
4.8.1 Normal temperature mode ( 0°C =< TCASE =< 85°C ) 46
4.8.2 Extended temperature mode ( 0°C =< TCASE =< 95°C ) 46
4.9 Fine Granularity Refresh Mode ............................................................................................................................47
4.9.1 Mode Register and Command Truth Table 47
4.9.2 tREFI and tRFC parameters 47
4.9.3 Changing Refresh Rate 48
4.9.4 Usage with Temperature Controlled Refresh mode 48
4.9.5 Self Refresh entry and exit 49
4.10 Multi Purpose Register .......................................................................................................................................49
4.10.1 DQ Training with MPR 49
4.10.2 MR3 definition 49
4.10.3 MPR Reads 50
4.10.4 MPR Writes 52
4.10.5 MPR Read Data format 55
4.11 Data Mask(DM), Data Bus Inversion (DBI) and TDQS.......................................................................................60
DDR4 SDRAM STANDARD
-i-
Contents
Proposed DDR4 Full spec update(79-4C) Item No. 1716.7D
4.12 ZQ Calibration Commands ................................................................................................................................ 62
4.12.1 ZQ Calibration Description 62
4.13 DQ Vref Training ................................................................................................................................................ 63
4.13.1 Example scripts for VREFDQ Calibration Mode: 66
4.14 Per DRAM Addressability................................................................................................................................... 69
4.15 CAL Mode (CS_n to Command Address Latency)............................................................................................. 72
4.15.1 CAL Mode Description 72
4.15.2 Self Refresh Entry, Exit Timing with CAL 75
4.15.3 Power Down Entry, Exit Timing with CAL 75
4.16 CRC ................................................................................................................................................................... 76
4.16.1 CRC Polynomial and logic equation 76
4.16.2 CRC data bit mapping for x8 devices 78
4.16.3 CRC data bit mapping for x4 devices 78
4.16.4 CRC data bit mapping for x16 devices 78
4.16.5 Write CRC for x4, x8 and x16 devices 79
4.16.6 CRC Error Handling 79
4.16.7 CRC Frame format with BC4 80
4.16.8 Simultaneous DM and CRC Functionality 83
4.16.9 Simultaneous MPR Write, Per DRAM Addressability and CRC Functionality 83
4.17 Command Address Parity( CA Parity )............................................................................................................... 83
4.17.1 CA Parity Error Log Readout 89
4.18 Control Gear-down Mode................................................................................................................................... 90
4.19 DDR4 Key Core Timing...................................................................................................................................... 93
4.20 Programmable Preamble ................................................................................................................................... 96
4.20.1 Write Preamble 96
4.20.2 Read Preamble 98
4.20.3 Read Preamble Training 98
4.21 Postamble .......................................................................................................................................................... 99
4.21.1 Read Postamble 99
4.21.2 Write Postamble 99
4.22 ACTIVATE Command ........................................................................................................................................ 99
4.23 Precharge Command......................................................................................................................................... 99
4.24 Read Operation................................................................................................................................................ 100
4.24.1 READ Timing Definitions 100
4.24.1.1 READ Timing; Clock to Data Strobe relationship 104
4.24.1.2 READ Timing; Data Strobe to Data relationship 105
4.24.1.3 tLZ(DQS), tLZ(DQ), tHZ(DQS), tHZ(DQ) Calculation 106
4.24.1.4 tRPRE Calculation 108
4.24.1.5 tRPST Calculation 109
4.24.2 READ Burst Operation 110
4.24.3 Burst Read Operation followed by a Precharge 121
4.24.4 Burst Read Operation with Read DBI (Data Bus Inversion) 123
4.24.5 Burst Read Operation with Command/Address Parity 124
4.24.6 Read to Write with Write CRC 125
4.24.7 Read to Read with CS to CA Latency 126
4.25 Write Operation................................................................................................................................................ 127
4.25.1 Write Timing Parameters 127
4.25.2 Write Data Mask 128
4.25.3 tWPRE Calculation 129
4.25.4 tWPST Calculation 130
4.25.5 Write Burst Operation 131
4.25.6 Read and Write Command Interval 146
4.25.7 Write Timing Violations 147
4.25.7.1 Motivation 147
4.25.7.2 Data Setup and Hold Offset Violations 147
4.25.7.3 Strobe and Strobe to Clock Timing Violations 147
4.26 Refresh Command........................................................................................................................................... 147
4.27 Self refresh Operation...................................................................................................................................... 149
4.27.1 Low Power Auto Self Refresh 150
-ii-
Proposed DDR4 Full spec update(79-4C) Item No. 1716.78D
4.27.2 Self Refresh Exit with No Operation command 151
4.28 Power down Mode ........................................................................................................................................... 152
4.28.1 Power-Down Entry and Exit 152
4.28.2 Power-Down clarifications 157
4.28.3 4.28.3 Power Down Entry and Exit timing during Command/Address Parity Mode is Enable 158
4.29 Maximum Power Saving Mode ........................................................................................................................ 158
4.29.1 Maximum power saving mode 158
4.29.2 Mode entry 158
4.29.3 CKE transition during the mode 159
4.29.4 Mode exit 160
4.29.5 Timing parameter bin of Maximum Power Saving Mode for DDR4-1600/1866/2133/2400/2666/3200 160
4.30 Connectivity Test Mode.................................................................................................................................... 161
4.30.1 Introduction 161
4.30.2 Pin Mapping 161
4.30.3 Logic Equations 162
4.30.3.1 Min Term Equations 162
4.30.3.2 Output equations for x16 devices 162
4.30.3.3 Output equations for x8 devices 162
4.30.3.4 Output equations for x4 devices 162
4.30.4 Input level and Timing Requirement 163
4.30.5 Connectivity Test ( CT ) Mode Input Levels 164
4.30.5.1 Input Levels for RESET_n 165
4.30.5.2 Input Levels for ALERT_n 165
4.31 CLK to Read DQS timing parameters.............................................................................................................. 166
4.32 Post Package Repair (hPPR) .......................................................................................................................... 168
4.32.1 Hard Fail Row Address Repair (WRA Case) 168
4.32.2 Hard Fail Row Address Repair (WR Case) 169
4.32.3 Hard Fail Row Address Repair MR bits and timing diagram 169
4.32.4 Programming hPPR & sPPR support in MPR0 page2 170
4.32.5 Required Timing Parameters 170
4.33 Soft Post Package Repair (sPPR) ................................................................................................................... 171
4.33.1 Soft Repair of a Fail Row Address 172
5. On-Die Termination 176
5.1 ODT Mode Register and ODT State Table......................................................................................................... 176
5.2 Synchronous ODT Mode.................................................................................................................................... 178
5.2.1 ODT Latency and Posted ODT 179
5.2.2 Timing Parameters 179
5.2.3 ODT during Reads: 181
5.3 Dynamic ODT..................................................................................................................................................... 182
5.3.1 Functional Description 182
5.3.2 ODT Timing Diagrams 183
5.4 Asynchronous ODT mode.................................................................................................................................. 184
5.5 ODT buffer disabled mode for Power down ....................................................................................................... 185
5.6 ODT Timing Definitions ...................................................................................................................................... 186
5.6.1 Test Load for ODT Timings 186
5.6.2 ODT Timing Definitions 186
6. Absolute Maximum Ratings 189
7. AC & DC Operating Conditions 189
8. AC & DC Input Measurement Levels 189
8.1 AC & DC Logic input levels for single-ended signals ......................................................................................... 189
8.2 AC and DC Input Measurement Levels: VREF Tolerances................................................................................ 190
8.3 AC and DC Logic Input Levels for Differential Signals....................................................................................... 191
8.3.1 Differential signal definition 191
8.3.2 Differential swing requirements for clock (CK_t - CK_c) 191
8.3.3 Single-ended requirements for differential signals 192
8.3.4 Address, Command and Control Overshoot and Undershoot specifications 193
8.3.5 Clock Overshoot and Undershoot Specifications 194
8.3.6 Data, Strobe and Mask Overshoot and Undershoot Specifications 195
8.4 Slew Rate Definitions ........................................................................................................................................ 196
-iii-
Proposed DDR4 Full spec update(79-4C) Item No. 1716.78D
8.4.1 Slew Rate Definitions for Differential Input Signals ( CK ) 196
8.4.2 Slew Rate Definition for Single-ended Input Signals ( CMD/ADD ) 197
8.5 Differential Input Cross Point Voltage ................................................................................................................ 197
8.6 CMOS rail to rail Input Levels ............................................................................................................................ 200
8.6.1 CMOS rail to rail Input Levels for RESET_n 200
8.7 AC and DC Logic Input Levels for DQS Signals ................................................................................................ 201
8.7.1 Differential signal definition 201
8.7.2 Differential swing requirements for DQS (DQS_t - DQS_c) 201
8.7.3 Peak voltage calculation method 202
8.7.4 Differential Input Cross Point Voltage 203
8.7.5 Differential Input Slew Rate Definition 204
9. AC and DC output Measurement levels 205
9.1 Output Driver DC Electrical Characteristics ....................................................................................................... 205
9.1.1 Alert_n output Drive Characteristic 207
9.1.2 Output Driver Characteristic of Connectivity Test ( CT ) Mode 208
9.2 Single-ended AC & DC Output Levels ............................................................................................................... 208
9.3 Differential AC & DC Output Levels ................................................................................................................... 209
9.4 Single-ended Output Slew Rate......................................................................................................................... 209
9.5 Differential Output Slew Rate............................................................................................................................. 210
9.6 Single-ended AC & DC Output Levels of Connectivity Test Mode ......................................................................211
9.7 Test Load for Connectivity Test Mode Timing..................................................................................................... 212
10. Speed Bin 213
10.1 Speed Bin Table Note ...................................................................................................................................... 221
11. IDD and IDDQ Specification Parameters and Test conditions 222
11.1 IDD, IPP and IDDQ Measurement Conditions ................................................................................................. 222
11.2 IDD Specifications............................................................................................................................................ 237
12. Input/Output Capacitance 239
13. Electrical Characteristics & AC Timing 242
13.1 Reference Load for AC Timing and Output Slew Rate.................................................................................... 242
13.2 tREFI................................................................................................................................................................ 242
13.3 Clock Specification........................................................................................................................................... 243
13.3.1 Definition for tCK(abs) 243
13.3.2 Definition for tCK(avg) 243
13.3.3 Definition for tCH(avg) and tCL(avg) 243
13.3.4 Definition for tERR(nper) 243
13.4 Timing Parameters by Speed Grade................................................................................................................ 244
13.5 Rounding Algorithms........................................................................................................................................ 256
13.6 The DQ input receiver compliance mask for voltage and timing (see Figure 211)........................................... 257
13.7 Command, Control, and Address Setup, Hold, and Derating .......................................................................... 262
13.8 DDR4 Function Matrix...................................................................................................................................... 264
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