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April 10, 2009 / Vol. 7, No. 4 / CHINESE OPTICS LETTERS 291

Tailoring the spectral response of add/drop single and

multiple resonators in silicon-on-insulator

Invited Paper

B. Timotijevic

, G. Mashanovich

, A. Michaeli

, O. Cohen

, V. M. N. Passaro

J. Crnjanski

, and G. T. Reed

1∗

Advanced Technology Institute, University of Surrey, Guildford, GU2 7XH, UK

(B. Timotijevic is now with CSEM SA, Rue Jaquet-Droz 1, CH-2002 Neuchatel, Switzerland)

Intel Corporation, Kyriat Gat 82109, Jerusalem, Israel

Politecnico di Bari, via E. Orabona 4, 70125 Bari, Italy

Faculty of Electrical Engineering, University of Belgrade, Bulevar kralja

Aleksandra 73b, 11120 Belgrade, Serbia

∗

E-mail: g.reed@surrey.ac.uk

Received February 13, 2009

Channel dropping waveguide ﬁlters based on single and multiple resonators in silicon-on-insulator (SOI)

technology are of great interest due to their compactness and high wavelength selectivity, which is a desir-

able feature for photonic modulators, detectors, and other optically integrated components in telecommu-

nication systems, in particular for wavelength division multiplexing (WDM) systems. Particular advantage

of these ﬁlters is that they are capable of producing relatively large free spectral range (FSR) as well as

narrow 3-dB bandwidth of the ﬁlter resonances. Herein we report experimental results and discuss the pos-

sibility of designing mono-mode and (nearly) polarization independent SOI ring and racetrack resonators

with the FSR in excess of 30 nm.

OCIS codes: 130.0130, 250.0250, 230.7370, 260.3060, 260.5430.

doi: 10.3788/COL20090704.0291.

Miniaturization of photonic devices has been signif-

icantly intensiﬁed in the last decade in an attempt

to improve a footprint and performance of integrated

optical components. Silicon-on-insulator (SOI) has

emerged as a promising material choice for various

integrated optoelectronic devices

[1]

. It is attractive for

complex optical systems as the cost can be signiﬁcantly

reduced due to the compatibility with complementary

metal oxide semiconductor (CMOS) technology

[2]

. It

also has a high refractive index contrast between the

core and the cladding, which is an important property

for good conﬁnement of light and efﬁcient guiding and

coupling in sub-micron waveguides. However, for those

devices that are intended to be part of broadband optical

networks, for example multiplexers and de-multiplexers,

it is desirable to demonstrate a high selectivity and

a tunable response. Thus, it is necessary to provide

wavelength selective elements with the ability to ﬁlter

input data streams producing a large free spectral range

(FSR), a small full-width at half-maximum (FWHM),

and a high quality factor (Q), and all conditions set by

communication standards. Owing to the generic and

adaptable operation, ring-resonator-types of ﬁlters in

SOI are often considered as candidates to meet these

demands.

In silicon photonics, there is a particular focus on

two waveguide architectures upon which the devices

are typically built. Rib waveguides have proven to be

particularly useful regarding polarization properties

[3]

Single-mode and polarization independent (PI) res-

onators on rib waveguides have already been experi-

mentally demonstrated

[4]

, but their FSR is usually small

for applications in optical networks. On the other hand,

strip waveguides, or photonic wires, allow small bend

radii

[5,6]

, which in turn results in the improved FSR.

They have to be rather small in cross-section to prevent

higher-order modes (HOMs) from propagation

[7]

, and

they exhibit polarization dependence and loss issues.

In majority of applications, single-mode devices are re-

quired in order to minimize dispersion caused by multiple

spatial modes which, in turn, allows for more information

to be transmitted per unit time giving a higher band-

width. It is also desirable that TE and TM modes result

in similar transfer functions, i.e., a ﬁlter should perform

as a PI device as, otherwise, two separate devices, each

optimized for operation for one particular polarization,

need to be provided

[8]

In this letter, the structures are composed of Si-

waveguide and SiO

top and b ottom claddings. Further-

more, the waveguide height (WGH) is a ﬁxed parame-

ter, dictated in advance by established wafer processing

procedures. The rib WGH is set to 1.35 µm and the

strip waveguides WGH = 0.29 or 0.34 µm, while the

waveguide width (WGW) and the etch depth (ED) are

variables used to target the best performance.

Single-mode rib waveguides with relatively large cross

sections have been studied extensively by a number of

researchers to ﬁnd single-mode behavior at the same

time as low propagation loss

[9,10]

. They were recog-

nized as promising candidates due to the compatibility

with single-mode ﬁber dimensions and the possibility to

control the polarization. The single-mode behavior and

PI propagation depend both on geometrical parameters

of the waveguide (WGH, WGW, ED, sidewall angle)

1671-7694/2009/040291-05

° 2009 Chinese Optics Letters

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