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QM77031

Linear Multi-Mode Mid and High Band S-PAD

QM77031 DS20200415 | Subject to change without notice

1 of 40

www.qorvo.com

Product Status

Custom: This product is a custom or limited availability product.

Please contact your Qorvo representative for details.

Product Overview

The Qorvo

QM77031 is a multi-mode, high efficiency linear Mid

Band and High Band S-PAD (Switched PA plus Duplexer)

module designed for use as the integrated RF front-end in multi-

mode WCDMA / CDMA / LTE mobile cellular equipment. The

high efficiency S-PAD contains three amplifier paths for 3G/4G

Mid and High Band frequencies followed by distribution

switches, filters/duplexers/quadplexer and antenna switches for

multi-band coverage of both transmit and receive functions.

QM77031 band select and bias are programmed through two

Mobile Industry Processor Interface (MIPI) buses. The

QM77031 transmit-receive module supports Average Power

Tracking (APT) for higher system efficiency at various power

levels and modulations, as well as Envelope Tracking (ET) for

current consumption optimization.

The QM77031 is packaged in a RoHS-compliant, compact

62-pin, 6.5 x 8.6 x 0.8 (max) mm surface-mount leadless

package.

Functional Block Diagram

62 Pin 6.5x8.6 mm leadless SMT Package

Key Features

• Multi-Mode and Multi Band Capabilities;

WCDMA/CDMA2000/ FDD-LTE/TDD-LTE

• Integrated Band 1, 2, 3, 4, 7, 34, 39, 40 and 41(38) with

Filters, Duplexers and Quadplexer for Transmit and Receive

• Additional Bands Through External AUX Paths

• MIPI RFFE Digital Control Interface

• Uplink and Downlink Carrier Aggregation (CA)

• Designed and Optimized for Use with DC-DC Converter

• Support of Average Power Tracking (APT) and Envelope

Tracking (ET) for High System Efficiency and Performance

• Support of Power Class 2 for B41

• Support 5G NR for n1, n3, n40 and n41

• Power Modes and Bias Programmable with MIPI RFFE

Applications

• 3G/4G Multi-Mode Handsets

• WCDMA and LTE Datacards or Wearable Devices

• High Performance Communication Systems

• LTE Single Carrier Channel Bandwidths up to 20MHz

• CA Bandwidths up to 60MHz, 16QAM and 64QAM

Ordering Information

Part Number

Description

QM77031SR

7” Reel with 100 pieces

QM77031TR13-5K

13” Reel with 5000 pieces

QM77031DK

Design Kit

(includes Evaluation board)

QM77031

Linear Multi-Mode Mid and High Band S-PAD

QM77031 DS20200415 | Subject to change without notice

2 of 40

www.qorvo.com

Absolute Maximum Ratings

PARAMETER

CONDITIONS

RATING

Storage Temperature

−40 to +150 °C

Operating Temperature

−30 to +85 °C

Supply Voltage VCC

Standby Mode

+6.0 V

Supply Voltage VCC

Idle Mode

+6.0 V

Supply Voltage VCC

Operating Mode with 50 Ω load

+6.0 V

Supply Voltage, VBATT

-1.2V to +6.0 V

Digital control signals (VIO, SLCK, SDATA)

+2 V

RF Input Power

CW, 50 Ω load, T = 25

+10 dBm

Output Load VSWR (Ruggedness: no damage

or permanent perfromance degradation)

Ruggedness is guaranteed with closed loop

condition, constant forward Pout = Max

Prated (Pin ≤ +6dBm), QPSK 10MHz 12RB,

Vcc = 3.1 to 4.6 V, Vbatt = 4.8V and over

operating temperatures.

10 : 1

Calibration Output Load VSWR (Ruggedness,

no damage or permanent performance

degradation)

Ruggedness is guaranteed with fixed Pin

(1)

(Open loop) condition, Pout = Max Prated +

2dB or P1dB, Vcc = 4.5V, Vbatt = 4.8V, all

phase angles at 15/step, 3 min dwell at

each step, and at -30/25/85 C.

10:1

Stability Load VSWR

(spurious output level below -70 dBc)

Stability is guaranteed with fixed Pin

(2)

(Open loop) condition, for HPM, (1) Vcc =

3.4V, Vbatt = 3.8V, Pout = Prated and Prated

+ 1dB; (2) Vcc = 3.1V, Vbatt = 3.0V, and Vcc

= 4.6V, Vbatt = 4.8V, Pout = Prated - 1dB;

while for LPM, Vcc = 1.15V, Vbatt = 3.8V,

Pout = Prated in LPM; all cases at all phase

angles and at -20/25/85 C.

6:1

ESD

HBM

1000 V

ESD

CDM

500 V

Notes: 1. Pin is defined as the RF input level that delivers Max Prated+2dB or P1dB (if PA is saturated and cannot achieve Prated+2dB) into 50 load, at L/M/H frequencies

for each band, and at each temperature. 2. Pin is defined as the CW signal input level that delivers target power into 50 load, at L/M/H frequencies for each band, and at

each temperature.

Exceeding any one or a combination of the Absolute Maximum Rating conditions may cause permanent damage to the device. Extended application of the Absolute

Maximum Rating conditions to the device may reduce device reliability. Specified typical performance or functional operation of the device under Absolute Maximum Rating

conditions is not implied.

QM77031

Linear Multi-Mode Mid and High Band S-PAD

QM77031 DS20200415 | Subject to change without notice

4 of 40

www.qorvo.com

Electrical Specifications

Parameter

Conditions

Min.

Typ.

Max.

Units

4G FDD LTE

Band 1

TX Electrical Specifications

Unless otherwise stated:

All unused RF ports terminated in 50Ω,

Input and Output = 50Ω,

Temp = 25°C, VBATT = 3.8V, APT Mode,

QPSK, 10MHz, 12 Resource Blocks with MPR=0

Operational Frequency Range

Band 1

1920

1980

MHz

Maximum Linear Output Power

ET mode

dBm

Maximum Linear Output Power

HPM, VCC = 3.4V

dBm

HPM, VCC = 3.1V, VBAT=3.4V,

Temp = -20°C to +85°C

HPM, VCC = 3.4V, 20MHz 16QAM 100RB

HPM, VCC = 3.4V, 20MHz 64QAM 100 RB

HPM, VCC = 3.4V, 40MHz 16QAM 200RB

Gain

HPM, VCC = 3.4V

25.5

27.8

31.5

HPM, VCC = 3.1V, VBAT=3.4V,

Temp = -20°C to +85°C

27.5

LPM, VCC =1.15V, Pout=11.5dBm

18.5

EUTRA – ACLR (Note 1)

HPM, VCC = 3.4V, Pout ≤ Pmax

-41

-33

dBc

UTRA - ACLR1 (Note 1)

HPM, VCC = 3.4V, Pout ≤ Pmax

-42

-36

UTRA - ACLR2 (Note 1)

HPM, VCC = 3.4V, Pout ≤ Pmax

-61

-39

EVM

All modulations

Gain transient time

Gain transient time between PA modes

µs

PAE

HPM, VCC = 3.4V, Pout = Pmax

Current Consumption

HPM, VCC = 3.4V, Pout = Pmax

580

790

Quiescent Current

HPM, VCC = 3.4V, No RF, Icq1+Icq2

145

290

Non CA RX Band Noise

2110 – 2170MHz, 20MHz QPSK 100RB

-189

-185

dBm/Hz

UL-CCA RX Band Noise

2110 – 2150MHz, 40MHz QPSK 100+30RB

-184

-180

B3 RX Band Noise (1805 – 1880MHz)

Tx=1930MHz, 20MHz QPSK 25RB

-183

-174

Tx=1950MHz, 20MHz QPSK 25RB

-184

-180

LB RX Band Noise

699 – 960MHz, 40MHz QPSK 200RB

-187

-175

HB RX Band Noise

2300 – 2700MHz, 40MHz QPSK 200RB

-178

-175

B42 RX Band Noise

3400 – 3600MHz, 40MHz QPSK 200RB

-181

-170

ISM 5G Noise (except harmonics)

5150 – 5850MHz, 40MHz QPSK 200RB

-185

-175

GPS Band Noise

1574 – 1577MHz, 40MHz QPSK 200RB

-188

-168

Harmonics

2f0

-70

-40

dBm

3f0

-65

-60

4f0 and above up to 12.75GHz

-54

-45

Stability, spurious output level

Load VSWR = 6:1, all phase angles, Pfwd =

Prated, maintain forward power (closed loop)

-40

dBm

Note 1. ACLR specifications also apply to other LTE waveforms, but must be tested with proper MPR/AMPR according to 3GPP.

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