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QM77033

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QM77033D

Low Band Switched PA plus Duplexer

ADVANCE

QM77033D Data Sheet

DS20190603 | Subject to change without notice

1 of 41

www.qorvo.com

ADVANCED

< PRELIMINARY >

Product Overview

The Qorvo

QM77033D is multi-mode, multi-band high

efficiency linear Low Band S-PAD (Switched PA plus Duplexer)

designed for use as the final amplification stage in multi-mode

GSM / CDMA / EDGE / WCDMA / LTE / NR mobile cellular

equipment. The high efficiency LB S-PAD contains three

amplifier paths for 3G/4G/5G Low, 2G Low and 2G High Band

frequencies followed by switch outputs for multi-band

coverage. QM77033D band select and bias are programmed

through Mobile Industry Processor Interface (MIPI) buses. This

QM77033D supports Average Power Tracking (APT) for higher

system efficiency at various power levels and modulations, as

well as is Envelope Tracking (ET) capable for current

consumption optimization.

The QM77033D is designed to be used with QM77030/31/38

Mid/High Band Module and is packaged in a RoHS-compliant,

compact 56-pin, 6.0x7.6X0.8(max) mm surface-mount leadless

package.

Functional Block Diagram

56 Pin 6.0x7.6 mm leadless SMT Package

Key Features

• Multi-Mode and Multi Band Capabilities;

GSM/EDGE/CDMA2000/WCDMA/FDD-LTE/NR

• Integrated Band 26(5), 8, 12 and 20 duplexers and GSM TX

Harmonic Filters

• Quad-Band EDGE, GPRS class 12 compatible

• Additional Bands Through External Paths

• MIPI RFFE V2.1 Digital Control Interface Applications

• 2G Pin and VRAMP Power Control

• Separate MIPI controllers for PA and ASM

• Uplink and Downlink Carrier Aggregation

• Designed and Optimized for use with DC-DC converter

• Power Modes and Bias Programmable with MIPI RFFE

Interfaces

Applications

• 2G/3G/4G/5G Multi-Mode handsets

• WCDMA and LTE datacards or wearable devices

• High performance Communication Systems

• LTE/NR channel Bandwidths up to 20MHz

Ordering Information

Part Number

Description

QM77033DSR

7” Reel with 100 pieces

QM77033DTR13

13” Reel

QM77033DDK

Design Kit

(includes Evaluation board)

QM77033D

QM77033D Data Sheet

DS20190603 | Subject to change without notice

2 of 41

www.qorvo.com

Absolute Maximum Ratings

PARAMETER

CONDITIONS

RATING

Storage Temperature

−40 to +150 °C

Operating Temperature

−30 to +85 °C

Supply Voltage in Standby Mode

+6 V

Supply Voltage in Idle Mode

+6 V

Supply Voltage in Operating Mode

+6 V

Supply Voltage, VBATT

+6 V

Digital control signals (VIO, SLCK, SDATA)

+2 V

RF Input Power

CW, 50 Ω, T = 25

+10 dBm

Output Load VSWR (Ruggedness) ANT_LB (2G LB)

Open Loop

10:1

Output Load VSWR (Ruggedness) ANT_LB (3G/4G)

Closed Loop

10:1

Output Load VSWR (Ruggedness) 2G_HB_TXOUT (2G HB)

Open Loop

8:1

Output Load VSWR (Ruggedness) LB_TXOUT[1-4]

Closed Loop

10:1

ESD SAW Filter Pins (HBM)

500 V

ESD All (non-SAW Filter) Pins (HBM)

1000 V

2G/EDGE is 50% duty-cycle up to rated power (set under 50-ohm condition)

4G is 10M12RB modulation up to rated power (set under 50-ohm condition)

Open-loop and Closed-Loop testing allows maximum RF input power to +6dBm

Exceeding any one or a combination of the Absolute Maximum Rating conditions may cause permanent damage to the device. Extended application of Absolute Maximum

Rating conditions to the device may reduce device reliability. Specified typical performance or functional operation of the device under Absolute Maximum Rating conditions is

not implied.

Recommended Operating Conditions

Parameter

Min.

Typ.

Max.

Units

Operating Frequency Range

617

960

MHz

Operating Frequency Range (2G HB)