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QM77032 data sheet
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QM77032 data sheet
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QM77032
Low Band Switched PA plus Duplexer
ADVANCE
D
QM77032 Data Sheet
DS20191212 | Subject to change without notice
1 of 30
www.qorvo.com
Product Overview
The Qorvo
®
QM77032 is multi-mode, multi-band high efficiency
linear Low Band S-PAD (Switched PA plus Duplexer) designed
for use as the final amplification stage in multi-mode GSM /
CDMA / EDGE / WCDMA / LTE mobile cellular equipment. The
high efficiency LB S-PAD contains three amplifier paths for
3G/4G Low, 2G Low and 2G High Band frequencies followed
by switch outputs for multi-band coverage. QM77032 band
select and bias are programmed through Mobile Industry
Processor Interface (MIPI) buses. This QM77032 supports
Average Power Tracking (APT) for higher system efficiency at
various power levels and modulations, as well as is Envelope
Tracking (ET) capable for current consumption optimization.
The QM77032 is designed to be used with QM77030/31/38
Mid/High Band Module and is packaged in a RoHS-compliant,
compact 56-pin, 6.0x7.6X0.8(max) mm surface-mount leadless
package.
Functional Block Diagram
Functional Block Diagram
56 Pin 6.0x7.6 mm leadless SMT Package
Key Features
• Multi-Mode and Multi Band Capabilities;
GSM/EDGE/CDMA2000/WCDMA/TDD-LTE
• Integrated Band 26(5) and 8 duplexers and GSM TX
Harmonic Filters
• Quad-Band EDGE, GPRS class 12 compatible
• Additional Bands Through External Paths
• MIPI RFFE V2.1 Digital Control Interface Applications
• 2G Pin Power Control (Vramp capable)
• Separate MIPI controllers for PA and ASM
• Uplink and Downlink Carrier Aggregation
• Designed and Optimized for use with DC-DC converter
• Power Modes and Bias Programmable with MIPI RFFE
Interfaces
Applications
• 2G/3G/4G Multi-Mode handsets
• WCDMA and LTE datacards or wearable devices
• High performance Communication Systems
• LTE channel Bandwidths up to 20MHz
Ordering Information
Part Number
Description
QM77032SR
7” Reel with 100 pieces
QM77032TR13
13” Reel with 5,000pieces
QM77032DK-LIN
Design Kit – 2G Linear
(includes Evaluation board)
QM77032DK-VRAMP
Design Kit – 2G Vramp
(includes Evaluation board)

QM77032
QM77032 Data Sheet
DS20191212 | Subject to change without notice
2 of 30
www.qorvo.com
Absolute Maximum Ratings
PARAMETER
CONDITIONS
RATING
Storage Temperature
−40 to +150 °C
Operating Temperature
−30 to +85 °C
Supply Voltage in Standby Mode
+6 V
Supply Voltage in Idle Mode
+6 V
Supply Voltage in Operating Mode
+6 V
Supply Voltage, VBATT
+6 V
Digital control signals (VIO, SLCK, SDATA)
+2 V
RF Input Power
CW, 50 Ω, T = 25
°
C
+10 dBm
Output Load VSWR (Ruggedness) ANT_LB (LB 2G/EDGE mode)
*1
Open Loop
*3
10:1
Output Load VSWR (Ruggedness) ANT_LB (3G/4G)
*2
Closed Loop
*3
10:1
Output Load VSWR (Ruggedness) 2G_HB_TXOUT (HB 2G/EDGE
mode)
*1
Open Loop
*3
8:1
Output Load VSWR (Ruggedness) LB_TXOUT[1-4]
*2
Closed Loop
*3
10:1
ESD SAW Filter Pins (HBM)
500 V
ESD All (non-SAW Filter) Pins (HBM)
1000 V
*1
2G/EDGE is 50% duty-cycle up to rated power (set under 50-ohm condition)
*2
4G is 10M12RB modulation up to rated power (set under 50-ohm condition)
*3
Open-loop and Closed-Loop testing allows maximum RF input power to +6dBm
Exceeding any one or a combination of the Absolute Maximum Rating conditions may cause permanent damage to the device. Extended application of Absolute Maximum
Rating conditions to the device may reduce device reliability. Specified typical performance or functional operation of the device under Absolute Maximum Rating conditions is
not implied.
Recommended Operating Conditions
Parameter
Min.
Typ.
Max.
Units
Operating Frequency Range
617
960
MHz
Operating Frequency Range (2G HB)
1710
1910
MHz
Operating Ambient Temperature
-20
+25
+85
°C
Supply Voltage, VBATT
+3.0
+4.8
V
Supply Voltage, 3G4G VCC1, VCC2
+0.5
*1
+4.6
V
Supply Voltage, 2G VCC
+0.5
*1
+4.6
V
Supply Voltage, VIO
+1.65
+1.8
+1.95
V
Vramp, GMSK (Pout=Max)
+1.65
V
Vramp, GMSK (Pout=Min)
+0.25
V
VIO Rise Time
450
µs
SCLK, SDATA Logic Low
0
0.3 * VIO
V
SCLK, SDATA Logic HIGH
0.7 * VIO
+1.8
VIO
V
SCLK, SDATA Input, Current
50
µA
SCLK Write Speed
38.4
52
MHz
SCLK Read Speed
26
MHz
Total Leakage Current (ICC+IBAT)
20
µA
*1
VCC down to 0.5V may be used for backed-off power when using DC-DC converter to reduce low power current drain.
Electrical specifications are measured at specified test conditions. Specifications are not guaranteed over all recommended operating conditions.

QM77032
QM77032 Data Sheet
DS20191212 | Subject to change without notice
3 of 30
www.qorvo.com
Electrical Specifications
Parameter
Conditions
Min.
Typ.
Max.
Units
2G GMSK Linear Mode
GSM850/GSM900
TX Electrical Specifications
Unless otherwise stated:
All unused RF ports terminated in 50Ω,
Input and Output = 50Ω,
Temp = 25°C, VCC = VBAT = 3.5V,
GMSK Modulation, Duty Cycle = 25%, Period = 4.6ms.
Operational Frequency Range
GSM850
824
849
MHz
GSM900
880
915
Input Power (Pin)
9
dBm
Maximum Output Power
HPM
34.5
dBm
HPM, VBAT = 3.2V, Temp = -20 to +85°C
33.5
LPM
13
Gain
HPM
31
dB
LPM
16
PAE
Pin adjusted for Pout = 34.5dBm
36
%
Switching Spectrum
ORFS 400kHz offset
-33
-26
dBm
/30kHz
Harmonics
2f0
-40
-33
dBm
3f0
-40
-33
4fo to < 12.75 GHz
-40
-33
Forward Isolation
VBAT = 3.2V, Temp = -20 to +85°C, PA OFF
-45
dBm
Noise Power, 736MHz to 757MHz
Pin adjusted for Pout=34.5dBm;
RBW=100kHz
-85
-83
dBm
/100kHz
Noise Power, 757MHz to 763MHz
-84
-77
Noise Power, 869MHz to 894MHz
-84
-83
Noise Power, 925MHz to 935MHz
-81
-73
Noise Power, 935MHz to 960MHz
-85
-83
Noise Power, 1805MHz to 1880MHz
-115
-77
Noise Power, 1930MHz to 1990MHz
-113
-77
Noise Power, 2400MHz to 2500MHz
-164
-156
dBm/Hz
Stability (Spurious), VSWR 6:1
VSWR=6:1; all phase angles;
Pin adjusted to output power 33dBm into
50Ω load;
VCC=4.6, VBAT= 4.8V;
Temp=25°C; RBW=3MHz
-36
dBm

QM77032
QM77032 Data Sheet
DS20191212 | Subject to change without notice
4 of 30
www.qorvo.com
Parameter
Conditions
Min.
Typ.
Max.
Units
2G GMSK Linear Mode
DCS1800/PCS1900
TX Electrical Specifications
Unless otherwise stated:
All unused RF ports terminated in 50Ω,
Input and Output = 50Ω,
Temp = 25°C, VCC = VBAT = 3.5V,
GMSK Modulation, Duty Cycle = 25%, Period = 4.6ms.
Applied the external matching network, shunt 1.2pF, at 2GHB_TXOUT on EVB.
Operational Frequency Range
DCS1800
1710
1785
MHz
PCS1900
1850
1910
Input Power (Pin)
5
dBm
Maximum Output Power
HPM
32.8
dBm
HPM, VBAT = 3.2V, Temp = -20 to +85°C
31.8
LPM
13
Gain
HPM
30
dB
LPM
18
PAE
Pin adjusted for Pout = 32.8dBm
32
%
Switching Spectrum
ORFS 400kHz offset
-32
-26
dBm
/30kHz
Harmonics
2f0
-40
-33
dBm
3f0
-40
-33
4fo to < 12.75 GHz
-40
-33
Forward Isolation
VBAT = 3.2V, Temp = -20 to +85°C, PA OFF
-53
dBm
Noise Power, 736MHz to 757MHz
Pin adjusted for Pout = 32.8dBm;
RBW = 100kHz
-94
-83
dBm
/100kHz
Noise Power, 757MHz to 763MHz
-93
-77
Noise Power, 869MHz to 894MHz
-94
-83
Noise Power, 925MHz to 935MHz
-94
-73
Noise Power, 935MHz to 960MHz
-97
-83
Noise Power, 1805MHz to 1880MHz
-86
-77
Noise Power, 1930MHz to 1990MHz
-88
-77
Noise Power, 2400MHz to 2500MHz
-149
-145
dBm/Hz
Stability (Spurious), VSWR 6:1
VSWR=6:1; all phase angles;
Pin adjusted for output power 31.5dBm into
50Ω load;
VCC=4.6, VBAT= 4.8V;
Temp=25°C; RBW=3MHz
-36
dBm

QM77032
QM77032 Data Sheet
DS20191212 | Subject to change without notice
5 of 30
www.qorvo.com
Parameter
Conditions
Min.
Typ.
Max.
Units
2G EDGE
GSM850/GSM900
TX Electrical Specifications
Unless otherwise stated:
All unused RF ports terminated in 50Ω,
Input and Output = 50Ω,
Temp = 25°C, VCC = VBAT = 3.5V,
Pout = 28.5dBm, Duty Cycle = 25%, Period = 4.6ms.
Operational Frequency Range
GSM850
824
849
MHz
GSM900
880
915
Maximum Output Power
28.4
dBm
VBAT = 3.2 to 4.5V; Temp = -20 to +85°C
27.4
Gain
32
dB
VBAT = 3.2V, Temp = -20 to +85°C
31
Peak Supply Current
1155
mA
PAE
16
%
Modulation Spectrum
ORFS 200KHz offset
-35
-30
dBc
/30kHz
ORFS 400KHz offset
-65
-57
ORFS 600KHz offset
-79
-65
ORFS 1800KHz offset
-75
-65
Switching Spectrum
ORFS 400kHz offset
-33
-26
dBm
/30kHz
Harmonics
2f0
-40
-33
dBm
3f0
-40
-33
4fo to < 12.75 GHz
-40
-33
EVM RMS
3.6
4.5
%
Noise Power
736MHz to 757MHz
-83
-79
dBm
/100kHz
757MHz to 763MHz
-83
-77
869MHz to 894MHz
-74
-73
925MHz to 935MHz
-76
-73
935MHz to 960MHz
-76
-71
1805MHz to 1880MHz
-115
-77
1930MHz to 1990MHz
-113
-77
2400MHz to 2500MHz
-164
-156
dBm/Hz
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