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QM77040 data sheet
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QM77040 data sheet
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QM77040
Linear Multi-Mode Mid and High Band S-PAD for 3G/4G/5G Applications
QM77040 DS20190920 | Subject to change without notice
1 of 40
www.qorvo.com
Product Overview
The Qorvo
®
QM77040 is a multi-mode, high efficiency linear
Mid Band and High Band S-PAD (Switched PA plus Duplexer)
module designed for use as the integrated RF front-end in
multi-mode WCDMA/CDMA/TDS-CDMA/LTE/NR mobile
cellular equipment. The high efficiency S-PAD contains two
amplifier paths for 3G/4G/5G Mid and High Band frequencies
followed by distribution switches, filters/duplexers/quadplexer
and antenna switches for multi-band coverage of both transmit
and receive functions. QM77040 band select and bias are
programmed through two Mobile Industry Processor Interface
(MIPI) buses. The QM77040 transmit-receive module supports
Average Power Tracking (APT) for higher system efficiency at
various power levels and modulations, as well as Envelope
Tracking (ET) for current consumption optimization.
The QM77040 is packaged in a RoHS-compliant, compact
62-pin, 6.5 x 8.6 x 0.8 (max) mm surface-mount leadless
package.
Functional Block Diagram
Functional Block Diagram
62 Pin 6.5x8.6 mm leadless SMT Package
Key Features
• Multi-Mode and Multi Band Capabilities;
WCDMA/CDMA2000/ FDD-LTE/TDD-LTE/NR
• Integrated Band 1, 2, 3, 4, 7, 34, 39, 40 and 41(38) with
Filters, Duplexers and Quadplexer for Transmit and Receive
• Additional Mid Bands Through External AUX Path
• Inter-band Downlink Carrier Aggregation (DL CA): B1+B3,
B39+B41, B3+B7, B1+B3+B7 and B3+B41
• Designed and Optimized for Use with DC-DC Converter
• Support of Average Power Tracking (APT) and Envelope
Tracking (ET) for High System Efficiency and Performance
• Support Power Class 2 (i.e. HPUE) for B41
• Support 5G NR for n41, n3 and n1
• MIPI RFFE 2.1 Applications
Applications
• 3G/4G/5G Multi-Mode Handsets
• WCDMA and LTE Datacards or Wearable Devices
• High Performance Communication Systems
• LTE Single Carrier Channel Bandwidths up to 20MHz and
5G NR Channel Bandwidths up to 100MHz
• LTE CA Bandwidths up to 60MHz, 16QAM and 64QAM
Ordering Information
Part Number
Description
QM77040SR
7” Reel with 100 pieces
QM77040TR13
13” Reel with 5000 pieces
QM77040DK
Design Kit
(includes Evaluation board)
QM77040
Linear Multi-Mode Mid and High Band S-PAD for 3G/4G/5G Applications
QM77040 DS20190920 | Subject to change without notice
2 of 40
www.qorvo.com
Absolute Maximum Ratings
PARAMETER
CONDITIONS
RATING
Storage Temperature
−40 to +150 °C
Operating Temperature
−30 to +85 °C
Supply Voltage VCC
Standby Mode
+6.0 V
Supply Voltage VCC
Idle Mode
+6.0 V
Supply Voltage VCC
Operating Mode with 50 Ω load
+6.0 V
Supply Voltage, VBATT
-1.2V to +6.0 V
Digital control signals (VIO, SLCK, SDATA)
+2 V
RF Input Power
CW, 50 Ω load, T = 25
°
C
+10 dBm
Output Load VSWR (Ruggedness: no damage
or permanent perfromance degradation)
Ruggedness is guaranteed with closed loop
condition, constant forward Pout = Max
Prated (Pin ≤ +6dBm), QPSK 10MHz 12RB,
Vcc = 3.1 to 4.8 V, Vbatt = 4.8V and over
operating temperatures.
10 : 1
ESD
HBM
1000 V
ESD
CDM
500 V
Exceeding any one or a combination of the Absolute Maximum Rating conditions may cause permanent damage to the device. Extended application of the Absolute
Maximum Rating conditions to the device may reduce device reliability. Specified typical performance or functional operation of the device under Absolute Maximum Rating
conditions is not implied.
Recommended Operating Conditions
Parameter
Min.
Typ.
Max.
Units
Operating Frequency Range
1710
2690
MHz
Operating Ambient Temperature
-20
+25
+85
°C
Supply Voltage, VBATT
+3.0
3.8
+4.8
V
Supply Voltage, VCC1, VCC2
+0.5
(1)
3.4
+4.8
V
Supply Volage, VIO
+1.65
+1.8
+1.95
V
VIO Rise Time
400
µs
RF Input Power
+6
dBm
SCLK, SDATA Logic Low
0
-
0.3*VIO
V
SCLK, SDATA Logic HIGH
0.7*VIO
-
VIO
V
SCLK, SDATA Input, Current
50
µA
SCLK Write Speed
38.4
52
MHz
SCLK Read Speed
26
MHZ
Total Leakage Current (ICC+IBAT)
20
µA
Electrical specifications are measured at specified test conditions. Specifications are not guaranteed over all recommended operating conditions.
Notes:
1. VCC down to 0.5V may be used for backed-off power when using DC-DC converter to reduce low power current drain. Refer to Look-up Table (LUT) for
recommended VCC settings for each output power level.
QM77040
Linear Multi-Mode Mid and High Band S-PAD for 3G/4G/5G Applications
QM77040 DS20190920 | Subject to change without notice
3 of 40
www.qorvo.com
5G NR Test Waveforms
5G Waveform
Duplex
Mode
Channel
BW
SCS
Modulation
RB
Allocation
RB
Allocated
RB
start
MPR
NR 1
FDD
20
15
OFDM QPSK
Inner Full
50
25
0
NR2
FDD
20
15
OFDM QPSK
Outer Full
100
0
1
NR 3
FDD
20
15
OFDM 256QAM
Outer Full
100
0
4.5
NR 4
FDD
30
15
OFDM QPSK
Inner Full
80
40
0
NR 5
FDD
30
15
OFDM QPSK
Outer Full
160
0
1
NR 6
FDD
30
15
OFDM 256QAM
Outer Full
160
0
4.5
NR 7
TDD
100
30
OFDM QPSK
Inner Full
135
67
0
NR 8
TDD
100
30
OFDM QPSK
Outer Full
270
0
1
NR 9
TDD
100
30
OFDM 256QAM
Outer Full
270
0
4.5
QM77040
Linear Multi-Mode Mid and High Band S-PAD for 3G/4G/5G Applications
QM77040 DS20190920 | Subject to change without notice
4 of 40
www.qorvo.com
Electrical Specifications
Parameter
Conditions
Min.
Typ.
Max.
Units
4G FDD LTE
Band 1
TX Electrical Specifications
Unless otherwise stated:
All unused RF ports terminated in 50Ω,
Input and Output = 50Ω,
Temp = 25°C, VBATT = 3.8V, APT Mode,
QPSK, 10MHz, 12 Resource Blocks with MPR=0
Operational Frequency Range
Band 1
1920
1980
MHz
Maxium Linear Output Power
ET Mode
26
dBm
Maxium Linear Output Power
HPM, VCC = 3.4V
25
dBm
HPM, VCC = 3.1V, VBAT=3.4V,
Temp = -20°C to +85°C
24
HPM, VCC = 3.4V, 20MHz 16QAM 100RB
23
HPM, VCC = 3.4V, 20MHz 64QAM 100 RB
22
HPM, VCC = 3.4V, 40MHz 16QAM 200RB
22
Gain
HPM, VCC = 3.4V
28
dB
HPM, VCC = 3.1V, VBAT=3.4V,
Temp = -20°C to +85°C
27.7
LPM, VCC =1.15V, Pout=11.5dBm
21
LPM, VCC =0.6V, Pout=1.5dBm
15
EUTRA – ACLR
HPM, VCC = 3.4V, Pout ≤ Pmax
-43
-33
dBc
UTRA - ACLR1
HPM, VCC = 3.4V, Pout ≤ Pmax
-43
-36
UTRA - ACLR2
HPM, VCC = 3.4V, Pout ≤ Pmax
-62
-39
EVM
All modulations
2
5
%
Gain transient time
Gain transient time between PA modes
-
10
µs
PAE
HPM, VCC = 3.4V, Pout = Pmax
14.5
%
Current Consumption
HPM, VCC = 3.4V, Pout = Pmax
640
mA
LPM, VCC ≤ 0.6V, Pout = 1.5dBm
63
Non CA RX Band Noise
2110 – 2170MHz, 20MHz QPSK 100RB
-187
-179
dBm/Hz
UL-CCA RX Band Noise
2110 – 2150MHz, 40MHz QPSK 100+30RB
-187
-179
B3 RX Band Noise (1805 – 1880MHz)
Tx=1930MHz, 20MHz QPSK 25RB
-184
-174
Tx=1950MHz, 20MHz QPSK 25RB
-186
-179
LB RX Band Noise
699 – 960MHz, 40MHz QPSK 200RB
-171
-165
HB RX Band Noise
2300 – 2700MHz, 40MHz QPSK 200RB
-169
-165
B7 RX Band Noise, DL CA
2620 – 2690MHz, 40MHz QPSK 200RB
-175
-170
B42 RX Band Noise
3400 – 3600MHz, 40MHz QPSK 200RB
-164
-160
ISM 5G Noise (except harmonics)
5150 – 5850MHz, 40MHz QPSK 200RB
-186
-175
GPS Band Noise
1574 – 1577MHz, 40MHz QPSK 200RB
-167
-160
Harmonics
2f0
-57
dBm
3f0
-72
Stability, spurious output level
Load VSWR = 6:1, all phase angles, Pfwd =
Prated, maintain forward power (closed loop)
-
-36
dBm
QM77040
Linear Multi-Mode Mid and High Band S-PAD for 3G/4G/5G Applications
QM77040 DS20190920 | Subject to change without notice
5 of 40
www.qorvo.com
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNITS
5G NR
n1
TX Electrical Specifications
Unless otherwise stated:
All unused RF ports terminated in 50Ω, Input and Output = 50Ω,
Temp = 25°C, VBATT = 3.8V, APT Mode.
Operational Frequency Range
NR Band n1
1920
1980
MHz
Maximum Linear Output Power
HPM, VCC = 3.4V
NR 1
25
dBm
Gain
HPM, VCC = 3.4V
NR 1
28.2
dB
HPM, VCC = 3.1V, VBAT=3.4V,
Temp = -20°C to +85°C
NR 1
27.7
LPM, VCC =1.15V, Pout=11.5dBm
NR 1
15
PAE
HPM, VCC = 3.4V, Pout = Pmax
NR 1
15
%
Current Consumption
HPM, VCC = 3.4V, Pout = Pmax
NR 1
620
mA
NR ACLR
HPM, VCC = 3.4V, Pout ≤ Pmax - MPR
NR 2
-40
-33
dBc
UTRA - ACLR1
HPM, VCC = 3.4V, Pout ≤ Pmax - MPR
NR 2
-43
-36
UTRA - ACLR2
HPM, VCC = 3.4V, Pout ≤ Pmax - MPR
NR 2
-47
-39
EVM
HPM, VCC = 3.4V, Pout ≤ Pmax - MPR
NR 3
1.2
%
Parameter
Conditions
Min.
Typ.
Max.
Units
3G WCDMA
Band 1
TX Electrical Specifications
Unless otherwise stated:
All unused RF ports terminated in 50Ω,
Input and Output = 50Ω,
Temp = 25°C, VCC = 3.4V, VBAT = 3.8V, APT Mode, R99
Operational Frequency Range
Band 1
1920
1980
MHz
Maximum Output Power
HPM, VCC = 3.4V
26
dBm
HPM, VCC = 3.1V, VBAT = 3.4V,
Temp = -20°C to +85°C
25
Gain
HPM, VCC = 3.4V
28
dB
HPM, VCC = 3.1V, VBAT=3.4V,
Temp = -20°C to +85°C
27.7
UMTS ACLR1 (±5MHz)
Pout ≤ Pmax
-44
-36
dBc
UMTS ACLR2 (±10MHz)
Pout ≤ Pmax
-57
-46
EVM
All Condition
2
5
%
PAE
HPM, Pout = Pmax
17
%
Current Consumption
HPM, Pout = Pmax
690
mA
Phase discontinuity variation
-15
-
15
Degree
RX Band Noise
Pout ≤ Pmax
-186
-179
dBm/Hz
ISM 2.4G Noise
2400 to 2483 MHz
-180
-175
ISM 5G Noise (except harmonics)
5150 to 5850 MHz
-183
-175
GPS Band Noise
1574 to 1577 MHz
-180
-168
Harmonics
2f0
-58
dBm
3f0
-72
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