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FDB2532_FDP2532_FDI2532-芯片资料介绍.pdf
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FDB2532_FDP2532_FDI2532-芯片资料介绍.pdf
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©2002 Fairchild Semiconductor Corporation
June 2002
FDB2532 / FDP2532 / FDI2532 Rev. A1
FDB2532 / FDP2532 / FDI2532
FDB2532 / FDP2532 / FDI2532
N-Channel PowerTrench
®
MOSFET
150V, 79A, 16mΩ
Features
•r
DS(ON)
= 14mΩ (Typ.), V
GS
= 10V, I
D
= 33A
•Q
g
(tot) = 86nC (Typ.), V
GS
= 10V
• Low Miller Charge
•Low Q
RR
Body Diode
• UIS Capability (Single Pulse and Repetitive Pulse)
• Qualified to AEC Q101
Formerly developmental type 82884
Applications
• DC/DC converters and Off-Line UPS
• Distributed Power Architectures and VRMs
• Primary Switch for 24V and 48V Systems
• High Voltage Synchronous Rectifier
• Direct Injection / Diesel Injection System
• 42V Automotive Load Control
• Electronic Valve Train System
MOSFET Maximum Ratings T
C
= 25°C unless otherwise noted
Thermal Characteristics
This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a
copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/
Reliability data can be found at: http://www.fairchildsemi.com/products/discrete/reliability/index.html.
All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems
certification.
Symbol Parameter Ratings Units
V
DSS
Drain to Source Voltage 150 V
V
GS
Gate to Source Voltage ±20 V
I
D
Drain Current
79 A
Continuous (T
C
= 25
o
C, V
GS
= 10V)
Continuous (T
C
= 100
o
C, V
GS
= 10V) 56 A
Continuous (T
amb
= 25
o
C, V
GS
= 10V, R
θJA
= 43
o
C/W) 8 A
Pulsed Figure 4 A
E
AS
Single Pulse Avalanche Energy (Note 1) 400 mJ
P
D
Power dissipation 310 W
Derate above 25
o
C2.07W/
o
C
T
J
, T
STG
Operating and Storage Temperature -55 to 175
o
C
R
θJC
Thermal Resistance Junction to Case TO-220, TO-263, TO-262 0.48
o
C/W
R
θJA
Thermal Resistance Junction to Ambient TO-220, TO-262 (Note 2) 62
o
C/W
R
θJA
Thermal Resistance Junction to Ambient TO-263, 1in
2
copper pad area 43
o
C/W
S
G
D
TO-263AB
FDB SERIES
TO-220AB
FDP SERIES
DRAIN
DRAIN
GATE
GATE
SOURCE
SOURCE
(FLANGE)
DRAIN
(FLANGE)
DRAIN
(FLANGE)
DRAIN
SOURCE
GATE
TO-262AB
FDI SERIES
©2002 Fairchild Semiconductor Corporation FDB2532 / FDP2532 / FDI2532 Rev. A1
FDB2532 / FDP2532 / FDI2532
Package Marking and Ordering Information
Electrical Characteristics
T
C
= 25°C unless otherwise noted
Off Characteristics
On Characteristics
Dynamic Characteristics
Resistive Switching Characteristics
(V
GS
= 10V)
Drain-Source Diode Characteristics
Notes:
1: Starting T
J
= 25°C, L = 0.5 mH, I
AS
= 40A.
2: Pulse Width = 100s
Device Marking Device Package Reel Size Tape Width Quantity
FDB2532 FDB2532 TO-263AB 330mm 24mm 800 units
FDP2532 FDP2532 TO-220AB Tube N/A 50 units
FDI2532 FDI2532 TO-262AB Tube N/A 50 units
Symbol Parameter Test Conditions Min Typ Max Units
B
VDSS
Drain to Source Breakdown Voltage I
D
= 250µA, V
GS
= 0V 150 - - V
I
DSS
Zero Gate Voltage Drain Current
V
DS
= 120V - - 1
µA
V
GS
= 0V T
C
= 150
o
C- - 250
I
GSS
Gate to Source Leakage Current V
GS
= ±20V - - ±100 nA
V
GS(TH)
Gate to Source Threshold Voltage V
GS
= V
DS
, I
D
= 250µA2-4V
r
DS(ON)
Drain to Source On Resistance
I
D
= 33A, V
GS
= 10V - 0.014 0.016
Ω
I
D
= 16A, V
GS
= 6V, - 0.016 0.024
I
D
= 33A, V
GS
= 10V,
T
C
= 175
o
C
- 0.040 0.048
C
ISS
Input Capacitance
V
DS
= 25V, V
GS
= 0V,
f = 1MHz
- 5870 - pF
C
OSS
Output Capacitance - 615 - pF
C
RSS
Reverse Transfer Capacitance - 135 - pF
Q
g(TOT)
Total Gate Charge at 10V V
GS
= 0V to 10V
V
DD
= 75V
I
D
= 33A
I
g
= 1.0mA
-86129nC
Q
g(TH)
Threshold Gate Charge V
GS
= 0V to 2V - 11 16 nC
Q
gs
Gate to Source Gate Charge - 23 - nC
Q
gs2
Gate Charge Threshold to Plateau - 13 - nC
Q
gd
Gate to Drain “Miller” Charge - 20 - nC
t
ON
Turn-On Time
V
DD
= 75V, I
D
= 33A
V
GS
= 10V, R
GS
= 3.6Ω
- - 69 ns
t
d(ON)
Turn-On Delay Time - 16 - ns
t
r
Rise Time - 30 - ns
t
d(OFF)
Turn-Off Delay Time - 39 - ns
t
f
Fall Time - 17 - ns
t
OFF
Turn-Off Time - - 84 ns
V
SD
Source to Drain Diode Voltage
I
SD
= 33A - - 1.25 V
I
SD
= 16A - - 1.0 V
t
rr
Reverse Recovery Time I
SD
= 33A, dI
SD
/dt= 100A/µs - - 105 ns
Q
RR
Reverse Recovery Charge I
SD
= 33A, dI
SD
/dt= 100A/µs - - 327 nC
©2002 Fairchild Semiconductor Corporation FDB2532 / FDP2532 / FDI2532 Rev. A1
FDB2532 / FDP2532 / FDI2532
Typical Characteristics T
A
= 25°C unless otherwise noted
Figure 1. Normalized Power Dissipation vs
Ambient Temperature
Figure 2. Maximum Continuous Drain Current vs
Case Temperature
Figure 3. Normalized Maximum Transient Thermal Impedance
Figure 4. Peak Current Capability
T
C
, CASE TEMPERATURE (
o
C)
POWER DISSIPATION MULTIPLIER
0
0 25 50 75 100 175
0.2
0.4
0.6
0.8
1.0
1.2
125
150
0
25
50
75
100
125
25 50 75 100 125 150 175
I
D
, DRAIN CURRENT (A)
T
C
, CASE TEMPERATURE (
o
C)
V
GS
= 10V
0.01
0.1
1.0
10
-5
10
-4
10
-3
10
-2
10-1 10
0
10
1
2.0
t, RECTANGULAR PULSE DURATION (s)
Z
θJC
, NORMALIZED
THERMAL IMPEDANCE
NOTES:
DUTY FACTOR: D = t
1
/t
2
PEAK T
J
= P
DM
x Z
θJC
x R
θJC
+ T
C
P
DM
t
1
t
2
0.5
0.2
0.1
0.05
0.01
0.02
DUTY CYCLE - DESCENDING ORDER
SINGLE PULSE
100
1000
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
2000
50
I
DM
, PEAK CURRENT (A)
t, PULSE WIDTH (s)
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
V
GS
= 10V
T
C
= 25
o
C
I = I
25
175 - T
C
150
FOR TEMPERATURES
ABOVE 25
o
C DERATE PEAK
CURRENT AS FOLLOWS:
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