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FDP6676_IcpdfCom-芯片资料介绍.PDF
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FDP6676_IcpdfCom-芯片资料介绍.PDF
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April 2001
2000 Fairchild Semiconductor Corporation
FDP6676/FDB6676 Rev C(W)
FDP6676/FDB6676
30V N-Channel Logic Level PowerTrench
MOSFET
General Description
This N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers. It has been optimized for
“low side” synchronous rectifier operation, providing an
extremely low R
DS(ON)
.
Applications
• Synchronous rectifier
• DC/DC converter
Features
• 42 A, 30 V. R
DS(ON)
= 6.0 mΩ @ V
GS
= 10 V
R
DS(ON)
= 7.5 mΩ @ V
GS
= 4.5 V
• Critical DC electrical parameters specified at
elevated temperature
• High performance trench technology for extremely
low R
DS(ON)
• 175°C maximum junction temperature rating
.
S
G
D
TO-220
FDP Series
D
G
S
TO-263AB
FDB Series
S
G
D
Absolute Maximum Ratings T
A
=25
o
C unless otherwise noted
Symbol Parameter Ratings Units
V
DSS
Drain-Source Voltage 30 V
V
GSS
Gate-Source Voltage
± 16
V
I
D
Drain Current – Continuous (Note 1) 84 A
– Pulsed (Note 1) 240
P
D
Total Power Dissipation @ T
C
= 25°C
93 W
Derate above 25°C
0.48
W°C
T
J
, T
STG
Operating and Storage Junction Temperature Range -65 to +175
°C
Thermal Characteristics
R
θJC
Thermal Resistance, Junction-to-Case
1.6
°C/W
R
θJA
Thermal Resistance, Junction-to-Ambient
62.5
°C/W
Package Marking and Ordering Information
Device Marking Device Reel Size Tape width Quantity
FDP6676 FDP6676 Tube n/a 45
FDB6676 FDB6676 13” 24mm 800 units
FDP6676/FDB6676
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