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DGN−8D−8 DGK−8

www.ti.com

FEATURES KEY APPLICATIONS

THS4141

D, DGN, OR DGK PACKAGE

(TOP VIEW)

IN−

OCM

CC+

OUT+

IN+

CC−

OUT−

THS4140

D, DGN, OR DGK PACKAGE

(TOP VIEW)

IN−

OCM

CC+

OUT+

IN+

CC−

OUT−

SHUTDOWN

NUMBER OF

CHANNELS

DEVICE

THS4140

THS4141

−

HIGH-SPEED DIFFERENTIAL I/O FAMILY

DESCRIPTION

−100

−90

−80

−70

−60

−50

−40

−30

100k 1M 10M 100M

f − Frequency − Hz

THD − T

otalHarmonicDistortion − dB

TOTAL HARMONICDISTORTIONvsFREQUENCY

=5Vto ± 15V

DIGITAL

OUTPUT

−

OCM

ref

5V

−5V

Typical A/D ApplicationCircuit

THS4140

THS4141

SLOS320F – MAY 2000 – REVISED JANUARY 2006

HIGH-SPEED FULLY DIFFERENTIAL I/O AMPLIFIERS

• Single-Ended to Differential Conversion

• High Performance

• Differential ADC Driver

– 160 MHz –3 dB Bandwidth (V

= ±15 V)

• Differential Antialiasing

– 450 V/µs Slew Rate

• Differential Transmitter And Receiver

– –79 dB, Third Harmonic Distortion at

• Output Level Shifter

1 MHz

– 6.5 nV/ √ Hz Input-Referred Noise

• Differential Input/Differential Output

– Balanced Outputs Reject Common-Mode

Noise

– Reduced Second Harmonic Distortion Due

to Differential Output

• Wide Power-Supply Range

– V

= 5-V Single Supply to ±15-V Dual

Supply

• I

CC(SD)

= 880 µA in Shutdown Mode (THS4140)

The THS414x is one in a family of fully differential input/differential output devices fabricated using Texas

Instruments' state-of-the-art BiComI complementary bipolar process.

The THS414x is made of a true, fully differential signal path from input to output. This design leads to an

excellent common-mode noise rejection and improved total harmonic distortion.

RELATED DEVICES

DEVICE DESCRIPTION

THS412x 100 MHz, 43 V/µs, 3.7 nV/ √ Hz

THS413x 150 MHz, 51 V/µs, 1.3 nV/ √ Hz

THS415x 150 MHz, 650 V/µs, 7.6 nV/ √ Hz

Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas

Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.

PowerPAD is a trademark of Texas Instruments.

PRODUCTION DATA information is current as of publication date.

Products conform to specifications per the terms of the Texas

Instruments standard warranty. Production processing does not

necessarily include testing of all parameters.

www.ti.com

ABSOLUTE MAXIMUM RATINGS

DISSIPATION RATING TABLE

THS4140

THS4141

SLOS320F – MAY 2000 – REVISED JANUARY 2006

These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam

during storage or handling to prevent electrostatic damage to the MOS gates.

Table 1. AVAILABLE OPTIONS

PACKAGED DEVICES

(1)

EVALUATION

MSOP PowerPAD™ MSOP

SMALL OUTLINE

MODULES

(D)

(DGN) SYMBOL (DGK) SYMBOL

THS4140CD THS4140CDGN AOF THS4140CDGK ATR THS4140EVM

0°C to 70°C

THS4141CD THS4141CDGN AOI THS4141CDGK ATS THS4141EVM

THS4140ID THS4140IDGN AOG THS4140IDGK ASQ –

–40°C to 85°C

THS4141ID THS4141IDGN AOK THS4141IDGK ASR –

(1) For the most current package and ordering information, see the Package Option Addendum at the end of this document, or see the TI

Web site at www.ti.com .

over operating free-air temperature range (unless otherwise noted)

(1)

UNIT

Supply voltage V

CC–

to V

CC+

±16.5 V

Input voltage ±V

Output current

(2)

150 mA

Differential input voltage ±6 V

Continuous total power dissipation See Dissipation Rating Table

Maximum junction temperature

(3)

150°C

Maximum junction temperature, continuous operation, long term reliability

(4)

125°C

C suffix 0°C to 70°C

Operating free-air temperature

I suffix –40°C to 85°C

stg

Storage temperature –65°C to 150°C

Lead temperature 1,6 mm (1/16 Inch) from case for 10 seconds 300°C

HBM 2500 V

ESD ratings CDM 1500 V

MM 200 V

(1) Stresses beyond those listed under "absolute maximum ratings" may cause permanent damage to the device. These are stress ratings

only, and functional operation of the device at these or any other conditions beyond those indicated under "recommended operating

conditions" is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

(2) The THS414x may incorporate a PowerPad™ on the underside of the chip. This acts as a heatsink and must be connected to a

thermally dissipative plane for proper power dissipation. Failure to do so may result in exceeding the maximum junction temperature

which could permanently damage the device. See TI technical brief SLMA002 and SLMA004 for more information about utilizing the

PowerPad™ thermally enhanced package.

(3) The absolute maximum temperature under any condition is limited by the constraints of the silicon process.

(4) The maximum junction temperature for continuous operation is limited by package constraints. Operation above this temperature may

result in reduced reliability and/or lifetime of the device.

POWER RATING

(2)

PACKAGE θ

(1)

(°C/W) θ

(°C/W)

= 25°C T

= 85°C

D 97.5 38.3 1.02 W 410 mW

DGN 58.4 4.7 1.71 W 685 mW

DGK 260 54.2 385 mW 154 mW

(1) This data was taken using the JEDEC standard High-K test PCB.

(2) Power rating is determined with a junction temperature of 125°C. This is the point where distortion starts to substantially increase.

Thermal management of the final PCB should strive to keep the junction temperature at or below 125°C for best performance and long

term reliability.

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