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Features
•
Ballast control and half-bridge driver in one IC
•
Programmable preheat frequency
•
Programmable preheat time
•
Internal ignition ramp
•
Programmable over-current threshold
•
Programmable run frequency
Data Sheet No. PD60182-I
BALLAST CONTROL IC
CFL Application Diagram
•
Programmable dead time
•
DC bus under-voltage reset
•
Shutdown pin with hysteresis
•
Internal 15.6V zener clamp diode on Vcc
•
Micropower startup (150µA)
•
Latch immunity and ESD protection
•
Also available LEAD-FREE (PbF)
Description
The IR2156 incorporates a high voltage half-bridge
gate driver with a programmable oscillator and state
diagram to form a complete ballast control IC. The
IR2156 features include programmable preheat and
run frequencies, programmable preheat time, program-
mable dead-time, and programmable over-current pro-
tection. Comprehensive protection features such as
protection from failure of a lamp to strike,filament fail-
ures, as well as an automatic restart function, have
been included in the design. The IR2156 is available in
both 14 lead PDIP and 14 lead SOIC packages.
www.irf.com 1
Packages
14 Lead PDIP
14 Lead SOIC
(narrow body)
L
RES
C
VCC1
M2
M1
1
2
3
4
5
6
7
14
13
12
11
10
9
8
IR2156
RT
RPH
VDC
CPH
CS
LO
VS
HO
VB
COM
C
BOOT
CT
SD
C
RES
L
N
NC
F1
L
FILTE
R
C
FILTE
R
R
PH
R
T
C
CPH
C
T
R
1
C
SNUB
C
CP
D
CP1
D
CP2
C
ELCAP1
C
ELCAP1
D
RECT1
D
RECT2
VCC
C
VCC2
C
VDC
D
BOOT
R
BUS
R
SUPPLY
R
CS
C
CS
IR2156
(
S
) & (PbF)
IR2156
(
S
) & (PbF)
2 www.irf.com
Absolute Maximum Ratings
Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage
parameters are absolute voltages referenced to COM, all currents are defined positive into any lead. The thermal
resistance and power dissipation ratings are measured under board mounted and still air conditions.
Note 1: This IC contains a zener clamp structure between the chip V
CC
and COM which has a nominal breakdown
voltage of 15.6V. Please note that this supply pin should not be driven by a DC, low impedance power source
greater than the V
CLAMP
specified in the Electrical Characteristics section.
Symbol Definition Min. Max. Units
V
B
High side floating supply voltage -0.3 625
V
S
High side floating supply offset voltage V
B
- 25 V
B
+ 0.3
V
HO
High side floating output voltage V
S
- 0.3 V
B
+ 0.3
V
LO
Low side output voltage -0.3 V
CC
+ 0.3
I
OMAX
Maximum allowable output current (HO, LO) -500 500
due to external power transistor miller effect
V
VDC
VDC pin voltage -0.3 V
CC
+ 0.3
V
CT
CT pin voltage -0.3 V
CC
+ 0.3 V
CC
+ 0.3
I
CPH
CPH pin current -5 5
I
RPH
RPH pin current -5 5
V
RPH
RPH pin voltage -0.3 V
CC
+ 0.3 V
I
RT
RT pin current -5 5 mA
V
RT
RT pin voltage -0.3 V
CC
+ 0.3
V
CS
Current sense pin voltage -0.3 5.5
I
CS
Current sense pin current -5 5
I
SD
Shutdown pin current -5 5
I
CC
Supply current (note 1) -20 20
dV/dt Allowable offset voltage slew rate -50 50 V/ns
P
D
Package power dissipation @ T
A
≤ +25°C (14 pin PDIP) — 1.70
P
D
=
(T
JMAX
-T
A
)/Rth
JA
(14 pin SOIC) — 1.00
Rth
JA
Thermal resistance, junction to ambient (14 pin PDIP) — 70
(14 pin SOIC) — 120
T
J
Junction temperature -55 150
T
S
Storage temperature -55 150
T
L
Lead temperature (soldering, 10 seconds) — 300
V
mA
mA
V
mA
V
W
o
C/W
o
C
IR2156
(
S
) & (PbF)
www.irf.com 3
Recommended Operating Conditions
For proper operation the device should be used within the recommended conditions.
Symbol Definition Min. Max. Units
V
Bs
High side floating supply voltage V
CC
- 0.7 V
CLAMP
V
BSMIN
Minimum required VBS voltage for proper HO functionality 5 V
CC
V
S
Steady state high side floating supply offset voltage -1 600
V
CC
Supply voltage V
CCUV+
V
CLAMP
I
CC
Supply current note 2 10 mA
C
T
CT lead capacitance
220
— pF
I
SD
Shutdown lead current -1 1
I
CS
Current sense lead current -1 1
T
J
Junction temperature -40 125
o
C
I
SDLK
SD pin leakage current (@V
SD
=6V) — 125
I
CSLK
CS pin leakage current (@V
CS
=3V) — 25
V
mA
Note 2: Enough current should be supplied into the VCC lead to keep the internal 15.6V zener clamp diode on this lead
regulating its voltage, V
CLAMP
.
Electrical Characteristics
V
CC
= V
BS
= V
BIAS
= 14V +/- 0.25V, V
VDC
= Open, R
T
= 39.0kΩ, R
PH
= 100.0kΩ
,
C
T
= 470 pF, V
CPH
= 0.0V, V
CS
= 0.0V,
V
SD
= 0.0V, C
LO, HO
= 1000pF, T
A
= 25
o
C unless otherwise specified.
Symbol Definition Min. Typ. Max. Units Test Conditions
Supply Characteristics
V
CCUV+
V
CC
supply undervoltage positive going 10.5 11.5 12.5 V
CC
rising from 0V
threshold
V
CCUV-
V
CC
supply undervoltage negative going 8.5 9.5 10.5 V
CC
falling from 14V
threshold
V
UVHYS
V
CC
supply undervoltage lockout hysteresis 1.5 2.0 3.0
I
QCCUV
UVLO mode quiescent current 50 120 200 V
CC
= 11V
I
QCCFLT
Fault-mode quiescent current — 200 470 SD = 5.1V, or
CS > 1.3V
I
QCC
Quiescent V
CC
supply current — 1.0 1.5 CT connected toCOM
VCC =14V,RT=15kΩ
I
QCC50K
V
CC
supply current, f = 50kHz — 1.0 1.5 RT = 15kΩ
C
T
= 470 pF
V
CLAMP
V
CC
zener clamp voltage 14.5 15.6 16.5 V I
CC
= 5mA
µA
V
mA
I
QBS0
Quiescent VBS supply current -5 0 5
V
HO
=
V
S
(CT = 0V)
I
QBS1
Quiescent V
BS
supply current —
30
50 V
HO
= V
B
(C
T
= 14V)
I
LK
Offset supply leakage current — — 50
µA
V
B
= V
S
= 600V
µA
Floating Supply Characteristics
µA
IR2156
(
S
) & (PbF)
4 www.irf.com
Electrical Characteristics
V
CC
= V
BS
= V
BIAS
= 14V +/- 0.25V, V
VDC
= Open, R
T
= 39.0kΩ, R
PH
= 100.0kΩ
,
C
T
= 470 pF, V
CPH
= 0.0V, V
CS
= 0.0V,
V
SD
= 0.0V, C
LO, HO
= 1000pF, T
A
= 25
o
C unless otherwise specified.
Symbol Definition Min. Typ. Max. Units Test Conditions
RPH Characteristics
I
RPHLK
Open circuit RPH pin leakage current — 0.1 —
µA
CT = 10V
V
RPHFLT
Fault-mode
RPH
pin voltage
— 0 —
mV SD
>
5.1V
or CS >
1.3V
Oscillator, Ballast Control, I/O Characteristics
kHz
f
osc
Oscillator frequency 28 30 32 R
T
=33.0kΩ, VV
DC
= 5V
V
CPH
= Open
(Guaranteed by design)
f
osc
Oscillator frequency 37.6 40 43.9 KHz
R
T
=40k, R
PH
= 100K
C
T
= 470pF
d Oscillator duty cycle
—
50
—
%
V
CT+
Upper
C
T
ramp voltage threshold
—
8.3
—
V
CT-
Lower
C
T
ramp voltage threshold
—
4.8
—
V
CTFLT
Fault-mode
C
T
pin voltage
—
0
—
mV SD
>
5.1V
or CS >
1.3V
only CT CAP should
beconnected to CT
t
DLO
LO output deadtime
— 2.0 — usec
t
DHO
HO output deadtime
— 2.0 — usec
RDT Internal deadtime resistor
—
3
—
KΩ
V V
CC
= 14V
RT Characteristics
I
RTLK
Open circuit RT pin leakage current — 0.1 —
µA
CT = 10V
V
RTFLT
Fault-mode
RT
pin voltage
— 0 —
mV SD
>
5.1V
or CS >
1.3V
Preheat Characteristics
I
CPH
CPH pin charging current 3.6 4.3 5.2 µA V
CPH
=10V,CT=10V,
VDC=5V
V
CPHFLT
Fault-mode
CPH
pin voltage
— 0 — mV
SD
>
5.1V
or CS >
1.3V
V
SDTH+
Rising shutdown pin threshold voltage — 5.1 — V
V
SDHYS
Shutdown pin threshold hysteresis — 450 — mV
V
CSTH
Over-current sense threshold voltage 1.1 1.25 1.44 V
t
CS
Over-current sense propogation delay — 160 — nsec Delay from CS to LO
V
CSPW
Over-current sense minimum pulse width — 135 — nsec V
CS
pulse amplitude
= V
CSTH
+100mV
R
VDC
DC bus sensing resistor 7.5 10 14 kΩ V
CPH
>12V, VCT=0V
VDC= 7V
V
CPH-VDC
CPH to VDC offset voltage 10.3 10.9 11.4 V V
CPH
=open,VVDC=0V
Protection Characteristics
VOL Low-level output voltage — 0 105 Io = 0
VOH High-level output voltage — 0 100 V
BIAS
- Vo, Io = 0
tr Turn-on rise time — 110 150
tf Turn-off fall time
—
55
100
Gate Driver Output Characteristics
mV
ns
C
LO
= C
HO
=1nF
关断延迟
关断阀值
过流检测阀值
传播延迟
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