SAMSUNG-K7A801800M.pdf
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K7A801800M 256Kx36 & 512Kx18 Synchronous SRAM
- 1 -
Rev 6.0
March 2000
K7A803600M
Document Title
256Kx36 & 512Kx18-Bit Synchronous Pipelined Burst SRAM
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the
specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any ques-
tions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.
Revision History
Rev. No.
0.0
0.1
0.2
0.3
0.4
0.5
0.6
1.0
2.0
3.0
4.0
5.0
6.0
Remark
Preliminary
Preliminary
Preliminary
Preliminary
Preliminary
Preliminary
Preliminary
Final
Final
Final
Final
Final
Final
History
Initial draft
Modify DC characteristics( Input Leakage Current test Conditions)
form VDD=VSS to VDD to Max.
Change DC Characteristics.
ISB value from 80mA to 130mA at -16
ISB value from 70mA to 120mA at -15
ISB value from 65mA to 110mA at -14
ISB value from 50mA to 100mA at -10
ISB1 value from 10mA to 30mA
ISB2 value from 10mA to 30mA
1. Remove speed bin -16.
2. Changed DC condition at Icc and parameters
Icc ; from 400mA to 420mA at -15,
from 375mA to 400mA at -14,
from 300mA to 350mA at -10,
ISB ; from 120mA to 150mA at -15,
from 110mA to 130mA at -14,
from 100mA to 120mA at -10,
1. ADD x32 organization.
1. ADD VDDQ Supply voltage( 2.5V I/O )
1. Changed VOL Max value from 0.2V to 0.4V at 2.5V I/O.
1. Final spec Release.
2. Remove x32 organization.
1. Remove VDDQ Supply voltage( 2.5V I/O )
1. Add VDDQ Supply voltage( 2.5V I/O )
1. Change tOE from 4.0ns to 3.8ns at -14 .
1. Add tCYC 167MHz and 200MHz.
2. Changed DC condition at Icc and parameters
Icc ; from 420mA to 400mA at -15,
from 400mA to 350mA at -14,
from 350mA to 300mA at -10,
1. Change tCD from 4.0ns to 3.8ns at -14 .
Draft Date
April. 10 . 1998
June .08. 1998
Aug . 27. 1998
Sep. 09. 1998
Oct. 15. 1998
Dec. 10. 1998
Dec. 23. 1998
Jan. 29. 1999
Feb. 25. 1999
May. 13. 1999
July. 05. 1999
Nov. 19. 1999
March 14. 2000
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