K6R1004C1A-C CMOS SRAM
PRELIMINARY
Rev 4.0
- 1 -
February 1998
Document Title
256Kx4 High Speed Static RAM(5V Operating), Revolutionary Pin out.
Revision History
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the
specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any ques-
tions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.
Rev. No.
Rev. 0.0
Rev. 1.0
Rev. 2.0
Rev. 3.0
Rev. 4.0
Remark
Preliminary
Final
Final
Final
Final
History
Initial release with Preliminary.
Release to final Data Sheet.
1.1. Delete Preliminary
Update D.C parameters.
2.1. Update D.C parameters.
Add Industrial Temperature Range parts.
3.1. Add Industrial Temperature Range parts with the same parame-
ters as Commercial Temperature Range parts.
3.1.1. Add K6R1004C1A parts for Industrial Temperature Range.
3.1.2. Add ordering information.
3.1.3. Add the condition for operating at Industrial Temp. Range.
3.2. Add the test condition for VOH1 with VCC=5V±5% at 25°C
3.3. Add timing diagram to define tWP as ″(Timing Wave Form of
Write Cycle(CS=Controlled)″
4.1. Delete Industrial Temperature Range Part
4.2. Delete TSOP2 Package
4.3. Delete 17ns Part
Items
Previous spec.
(12/15/17/20ns part)
Updated spec.
(12/15/17/20ns part)
Icc 200/190/180/170mA 150/145/145/140mA
Isb 30mA 25mA
Isb1 10mA 8mA
Draft Data
Apr. 22th, 1995
Feb. 29th, 1996
Jul. 16th, 1996
Jun. 2nd, 1997
Feb. 25th, 1998
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