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镁光 DDR4 2die 规格书
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TwinDie™ 1.2V DDR4 SDRAM
MT40A1G16 – 64 Meg x 16 x 16 Banks x 1 Ranks
Description
The 16Gb (TwinDie™) DDR4 SDRAM uses
Micron’s 8Gb DDR4 SDRAM die; two x8s combined to
make one x16. Similar signals as mono x16, there is
one extra ZQ connection for faster ZQ Calibration and
a BG1 control required for x8 addressing. Refer to Mi-
cron’s 8Gb DDR4 SDRAM data sheet (x8 option) for
the specifications not included in this document.
Specifications for base part number MT40A1G8 corre-
late to TwinDie manufacturing part number
MT40A1G16.
Features
• Uses two x8 8Gb Micron die to make one x16
• Single rank TwinDie
• V
DD
= V
DDQ
= 1.2V (1.14–1.26V)
• 1.2V V
DDQ
-terminated I/O
• JEDEC-standard ball-out
• Low-profile package
• T
C
of 0°C to 95°C
– 0°C to 85°C: 8192 refresh cycles in 64ms
– 85°C to 95°C: 8192 refresh cycles in 32ms
Options Marking
• Configuration
– 64 Meg x 16 x 16 banks x 1 rank 1G16
• 96-ball FBGA package (Pb-free)
– 9.5mm x 14mm x 1.2mm Die Rev :A HBA
– 8.0mm x 14mm x 1.2mm Die Rev :B,
D
WBU
– 7.5mm x 13.5mm x 1.2mm Die Rev :E KNR
• Timing – cycle time
1
– 0.625ns @ CL = 22 (DDR4-3200) -062E
– 0.682ns @ CL = 21 (DDR4-2933) -068
– 0.750ns @ CL = 19 (DDR4-2666) -075
– 0.750ns @ CL = 18 (DDR4-2666) -075E
– 0.833ns @ CL = 17(DDR4-2400) -083
– 0.833ns @ CL = 16 (DDR4-2400) -083E
– 0.937ns @ CL = 15 (DDR4-2133) -093E
– 1.071ns @ CL = 13 (DDR4-1866) -107E
• Self refresh
– Standard None
• Operating temperature
– Commercial (0°C ≤ T
C
≤ 95°C) None
• Revision :A
:B, D
:E
Note:
1. CL = CAS (READ) latency.
Table 1: Key Timing Parameters
Speed Grade
1
Data Rate (MT/s) Target
t
RCD-
t
RP-CL
t
RCD (ns)
t
RP (ns) CL (ns)
-062Y 3200 22-22-22 13.75 (13.32) 13.75 (13.32) 13.75 (13.32)
-062E 3200 22-22-22 13.75 13.75 13.75
-068 2933 21-21-21 14.32 (13.75) 14.32 (13.75) 14.32 (13.75)
-075E 2666 18-18-18 13.50 13.50 13.50
-075 2666 19-19-19 14.25 14.25 14.25
-083E 2400 16-16-16 13.32 13.32 13.32
-083 2400 17-17-17 14.16 (13.75) 14.16 (13.75) 14.16 (13.75)
-093E 2133 15-15-15 14.06 (13.50) 14.06 (13.50) 14.06 (13.50)
-093 2133 16-16-16 15.00 15.00 15.00
-107E 1866 13-13-13 13.92 (13.50) 13.92 (13.50) 13.92 (13.50)
Note:
1. Refer to Speed Bin Tables for additional details.
16Gb: x16 TwinDie Single Rank DDR4 SDRAM
Description
CCMTD-1725822587-9947
16gb_x16_1cs_TwinDie.pdf - Rev. G 06/18 EN
1
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2015 Micron Technology, Inc. All rights reserved.
Products and specifications discussed herein are subject to change by Micron without notice.
Table 2: Addressing
Parameter 1024 Meg x 16
Configuration 64 Meg x 16 x 16 banks x 1 rank
Bank group address BG[1:0]
Bank count per group 4
Bank address in bank group BA[1:0]
Row addressing 64K (A[15:0])
Column addressing 1K (A[9:0])
Page size 1KB
Note:
1. Page size is per bank, calculated as follows:
Page size = 2
COLBITS
× ORG/8, where COLBIT = the number of column address bits and ORG = the number of
DQ bits.
16Gb: x16 TwinDie Single Rank DDR4 SDRAM
Description
CCMTD-1725822587-9947
16gb_x16_1cs_TwinDie.pdf - Rev. G 06/18 EN
2
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2015 Micron Technology, Inc. All rights reserved.
Important Notes and Warnings
Micron Technology, Inc. ("Micron") reserves the right to make changes to information published in this document,
including without limitation specifications and product descriptions. This document supersedes and replaces all
information supplied prior to the publication hereof. You may not rely on any information set forth in this docu-
ment if you obtain the product described herein from any unauthorized distributor or other source not authorized
by Micron.
Automotive Applications. Products are not designed or intended for use in automotive applications unless specifi-
cally designated by Micron as automotive-grade by their respective data sheets. Distributor and customer/distrib-
utor shall assume the sole risk and liability for and shall indemnify and hold Micron harmless against all claims,
costs, damages, and expenses and reasonable attorneys' fees arising out of, directly or indirectly, any claim of
product liability, personal injury, death, or property damage resulting directly or indirectly from any use of non-
automotive-grade products in automotive applications. Customer/distributor shall ensure that the terms and con-
ditions of sale between customer/distributor and any customer of distributor/customer (1) state that Micron
products are not designed or intended for use in automotive applications unless specifically designated by Micron
as automotive-grade by their respective data sheets and (2) require such customer of distributor/customer to in-
demnify and hold Micron harmless against all claims, costs, damages, and expenses and reasonable attorneys'
fees arising out of, directly or indirectly, any claim of product liability, personal injury, death, or property damage
resulting from any use of non-automotive-grade products in automotive applications.
Critical Applications. Products are not authorized for use in applications in which failure of the Micron compo-
nent could result, directly or indirectly in death, personal injury, or severe property or environmental damage
("Critical Applications"). Customer must protect against death, personal injury, and severe property and environ-
mental damage by incorporating safety design measures into customer's applications to ensure that failure of the
Micron component will not result in such harms. Should customer or distributor purchase, use, or sell any Micron
component for any critical application, customer and distributor shall indemnify and hold harmless Micron and
its subsidiaries, subcontractors, and affiliates and the directors, officers, and employees of each against all claims,
costs, damages, and expenses and reasonable attorneys' fees arising out of, directly or indirectly, any claim of
product liability, personal injury, or death arising in any way out of such critical application, whether or not Mi-
cron or its subsidiaries, subcontractors, or affiliates were negligent in the design, manufacture, or warning of the
Micron product.
Customer Responsibility. Customers are responsible for the design, manufacture, and operation of their systems,
applications, and products using Micron products. ALL SEMICONDUCTOR PRODUCTS HAVE INHERENT FAIL-
URE RATES AND LIMITED USEFUL LIVES. IT IS THE CUSTOMER'S SOLE RESPONSIBILITY TO DETERMINE
WHETHER THE MICRON PRODUCT IS SUITABLE AND FIT FOR THE CUSTOMER'S SYSTEM, APPLICATION, OR
PRODUCT. Customers must ensure that adequate design, manufacturing, and operating safeguards are included
in customer's applications and products to eliminate the risk that personal injury, death, or severe property or en-
vironmental damages will result from failure of any semiconductor component.
Limited Warranty. In no event shall Micron be liable for any indirect, incidental, punitive, special or consequential
damages (including without limitation lost profits, lost savings, business interruption, costs related to the removal
or replacement of any products or rework charges) whether or not such damages are based on tort, warranty,
breach of contract or other legal theory, unless explicitly stated in a written agreement executed by Micron's duly
authorized representative.
16Gb: x16 TwinDie Single Rank DDR4 SDRAM
Important Notes and Warnings
CCMTD-1725822587-9947
16gb_x16_1cs_TwinDie.pdf - Rev. G 06/18 EN
3
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2015 Micron Technology, Inc. All rights reserved.
Ball Assignments
Figure 1: 96-Ball x16 SR DDP Ball Assignments
1 2 3 4 6 7 8 95
V
DDQ
V
PP
V
DDQ
V
DD
V
SS
V
SSQ
V
DDQ
V
SSQ
V
DD
V
SS
V
DD
V
REFCA
V
SS
RESET_n
V
DD
V
SS
V
SS
V
SSQ
V
SS
UDQ4
V
SSQ
V
DDQ
LDQ0
LDQ4
V
DDQ
CKE
WE_n/A14
BG0 BG1
BA0
A6
A8
A11
UDQ0
V
DD
UDQ2
UDQ6
V
SSQ
LDQS_c
LDQS_t
LDQ2
LDQ6
ODT
ACT_n
A10/AP
A4
A0
A2
PAR
UDQS_c
UDQS_t
UDQ3
UDQ7
LDQ1
V
DD
LDQ3
LDQ7
CK_t
CS_n
A12/BC_n
A3
A1
A9
V
SSQ
UDQ1
UDQ5
V
SSQ
V
SSQ
V
DDQ
V
SS
LDQ5
V
DDQ
CK_c
RAS_n/A16
CAS-n/A15
BA1
A5
A7
A13
V
DDQ
V
DD
V
SSQ
V
DDQ
V
DDQ
UZQ
LZQ
V
SSQ
V
DD
V
SS
V
DD
TEN
V
PP
V
DD
A
B
C
D
E
F
G
H
J
K
L
M
N
P
R
T
A
B
C
D
E
F
G
H
J
K
L
M
N
P
R
T
NF/LDM_n/
LDBI_n
ALERT_n
NF/UDM_n/
UDBI_n
Notes:
1. See Ball Descriptions in the monolithic data sheet.
2. A slash “/” defines a selectable function. For example: Ball E2 = NF/UDM_n/UDBI_n
where either NF, UDM_n, or UDBI_n is defined via MRS.
16Gb: x16 TwinDie Single Rank DDR4 SDRAM
Ball Assignments
CCMTD-1725822587-9947
16gb_x16_1cs_TwinDie.pdf - Rev. G 06/18 EN
4
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2015 Micron Technology, Inc. All rights reserved.
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