美光DDR416GB芯片手册_ddr4芯片手册资源-CSDN文库

DDR4

芯片手册

5星 · 超过95%的资源需积分: 43 18 浏览量 2018-12-20 14:53:18 上传评论 3 收藏 461KB PDF 举报

资源推荐

资源详情

资源评论

TwinDie™ 1.2V DDR4 SDRAM

MT40A4G4 – 128 Meg x 4 x 16 Banks x 2 Ranks

MT40A2G8 – 64 Meg x 8 x 16 Banks x 2 Ranks

Description

The 16Gb (TwinDie™) DDR4 SDRAM uses

Micron’s 8Gb DDR4 SDRAM die (essentially two ranks

of the 8Gb DDR4 SDRAM). Refer to Micron’s 8Gb

DDR4 SDRAM data sheet for the specifications not in-

cluded in this document. Specifications for base part

number MT40A2G4 correlate to TwinDie manufactur-

ing part number MT40A4G4; specifications for base

part number MT40A1G8 correlate to TwinDie manu-

facturing part number MT40A2G8.

Features

• Uses 8Gb Micron die

• Two ranks (includes dual CS#, ODT, and CKE balls)

• Each rank has 4 groups of 4 internal banks for con-

current operation

• V

= V

DDQ

= 1.2V (1.14–1.26V)

• 1.2V V

DDQ

-terminated I/O

• JEDEC-standard ball-out

• Low-profile package

• T

of 0°C to 95°C

– 0°C to 85°C: 8192 refresh cycles in 64ms

– 85°C to 95°C: 8192 refresh cycles in 32ms

Options Marking

• Configuration

– 128 Meg x 4 x 16 banks x 2 ranks 4G4

– 64 Meg x 8 x 16 banks x 2 ranks 2G8

• FBGA package (Pb-free)

– 78-ball FBGA

(9.5mm x 13mm x 1.2mm) Die Rev :A

FSE

– 78-ball FBGA

(8.0mm x 12mm x 1.2mm) Die Rev :B

NRE

• Timing – cycle time

– 0.750ns @ CL = 18 (DDR4-2666) -075E

– 0.833ns @ CL = 16 (DDR4-2400) -083E

– 0.833ns @ CL = 17 (DDR4-2400) -083

– 0.937ns @ CL = 15 (DDR4-2133) -093E

– 0.937ns @ CL = 16 (DDR4-2133) -093

• Self refresh

– Standard None

• Operating temperature

– Commercial (0°C ≤ T

≤ 95°C) None

• Revision :A

Note:

1. CL = CAS (READ) latency.

Table 1: Key Timing Parameters

Speed Grade

Data Rate

(MT/s) Target

RCD-

RP-CL

RCD (ns)

RP (ns) CL (ns)

-075E

2666 18-18-18 13.5 13.5 13.5

-083E

2400 16-16-16 13.32 13.32 13.32

-083

2400 17-17-17 14.16 14.16 14.16

-093E 2133 15-15-15 14.06 14.06 14.06

-093 2133 16-16-16 15 15 15

Notes:

1. Backward compatible to 1600, CL = 11; 1866, CL = 13; 2133, CL = 15; and 2400, CL = 17.

2. Backward compatible to 2133, CL = 15 (-093E).

16Gb: x4, x8 TwinDie DDR4 SDRAM

Description

PDF: 09005aef85fd40a1

DDR4_16Gb_x4_x8_2CS_TwinDie.pdf - Rev. D 12/16 EN

Micron Technology, Inc. reserves the right to change products or specifications without notice.

Products and specifications discussed herein are subject to change by Micron without notice.

Table 3: FBGA 78-Ball Descriptions

Symbol Type Description

A[17:0] Input Address inputs: Provide the row address for ACTIVATE commands and the col-

umn address for READ/WRITE commands to select one location out of the memo-

ry array in the respective bank. (A10/AP, A12/BC_n, WE_n/A14, CAS_n/A15, RAS_n/

A16, have additional functions; see individual entries in this table). The address

inputs also provide the op-code during the MODE REGISTER SET command. A16 is

used on some 8Gb and 16Gb parts, and A17 is only used on some 16Gb parts.

A10/AP Input Auto precharge: A10 is sampled during READ and WRITE commands to deter-

mine whether auto precharge should be performed to the accessed bank after a

READ or WRITE operation (HIGH = auto precharge; LOW = no auto precharge).

A10 is sampled during a PRECHARGE command to determine whether the PRE-

CHARGE applies to one bank (A10 LOW) or all banks (A10 HIGH). If only one

bank is to be precharged, the bank is selected by the bank group and bank ad-

dresses.

A12/BC_n Input Burst chop: A12/BC_n is sampled during READ and WRITE commands to deter-

mine if burst chop (on-the-fly) will be performed. (HIGH = no burst chop; LOW =

burst-chopped). See the Command Truth Table.

ACT_n Input Command input: ACT_n indicates an ACTIVATE command. When ACT_n (along

with CS_n) is LOW, the input pins RAS_n/A16, CAS_n/A15, and WE_n/A14 are trea-

ted as row address inputs for the ACTIVATE command. When ACT_n is HIGH

(along with CS_n LOW), the input pins RAS_n/ A16, CAS_n/A15, and WE_n/A14

are treated as normal commands that use the RAS_n, CAS_n, and WE_n signals.

See the Command Truth Table.

BA[1:0] Input Bank address inputs: Define the bank (within a bank group) to which an ACTI-

VATE, READ, WRITE, or PRECHARGE command is being applied. Also determines

which mode register is to be accessed during a MODE REGISTER SET command.

BG[1:0] Input Bank group address inputs: Define the bank group to which a REFRESH, ACTI-

VATE, READ, WRITE, or PRECHARGE command is being applied. Also determines

which mode register is to be accessed during a MODE REGISTER SET command.

BG[1:0] are used in the x4 and x8 configurations.

C0/CKE1,

C1/CS1_n,

C2/ODT1

Input Stack address inputs: These inputs are used only when devices are stacked;

that is, 2H, 4H, and 8H stacks for x4 and x8 configurations (these pins are not

used in the x16 configuration). DDR4 will support a traditional dual-die package

(DDP), which uses these three signals for control of the second die (CS1_n, CKE1,

ODT1). DDR4 is not expected to support a traditional quad-die package (QDP).

For all other stack configurations, such as a 4H or 8H, it is assumed to be a single-

load (master/slave) type of configuration where C0, C1, and C2 are used as chip

ID selects in conjunction with a single CS_n, CKE, and ODT.

CK_t,

CK_c

Input Clock: Differential clock inputs. All address, command, and control input signals

are sampled on the crossing of the positive edge of CK_t and the negative edge

of CK_c.

16Gb: x4, x8 TwinDie DDR4 SDRAM

Ball Assignments and Descriptions

PDF: 09005aef85fd40a1

DDR4_16Gb_x4_x8_2CS_TwinDie.pdf - Rev. D 12/16 EN

Micron Technology, Inc. reserves the right to change products or specifications without notice.

Table 3: FBGA 78-Ball Descriptions (Continued)

Symbol Type Description

CKE Input Clock enable: CKE HIGH activates, and CKE LOW deactivates, the internal clock

signals, device input buffers, and output drivers. Taking CKE LOW provides PRE-

CHARGE POWER-DOWN and SELF REFRESH operations (all banks idle), or active

power-down (row active in any bank). CKE is asynchronous for self refresh exit.

After V

REFCA

has become stable during the power-on and initialization sequence,

it must be maintained during all operations (including SELF REFRESH). CKE must

be maintained HIGH throughout read and write accesses. Input buffers (exclud-

ing CK_t, CK_c, ODT, RESET_n, and CKE are disabled during power-down. Input

buffers (excluding CKE and RESET#) are disabled during self refresh.

CS_n Input Chip select: All commands are masked when CS_n is registered HIGH. CS_n pro-

vides for external rank selection on systems with multiple ranks. CS_n is consid-

ered part of the command code.

DM_nS Input Input data mask: DM_n is an input mask signal for write data. Input data is

masked when DM is sampled LOW coincident with that input data during a write

access. DM is sampled on both edges of DQS. DM is not supported on x4 configu-

rations. LDM_n is associated with DQ[7:0]. The DM, DBI, and TDQS functions are

enabled by mode register settings. See the Data Mask (DM) section.

ODT Input On-die termination: ODT (registered HIGH) enables termination resistance in-

ternal to the DDR4 SDRAM. When enabled, ODT (R

) is applied only to each DQ,

DQS_t, DQS_c, DM_n/DBI_n/TDQS_t, and TDQS_c signal for the x4 and x8 configu-

rations (when the TDQS function is enabled via mode register). The ODT pin will

be ignored if the mode registers are programmed to disable R

PAR Input Parity for command and address: This function can be enabled or disabled via

the mode register. When enabled, the parity signal covers all command and ad-

dress inputs, including RAS_n/A16, CAS_n/A15, WE_n/A14, A[17:0], A10/AP, A12/

BC_n, BA[1:0], BG[1:0], C0/A18, C1/A19, C2/A20. Control pins NOT covered by the

parity signal are CS_n, CKE, and ODT. Unused address pins that are density- and

configuration-specific should be treated internally as 0s by the DRAM parity log-

ic.

RAS_n/A16,

CAS_n/A15,

WE_n/A14

Input Command inputs: RAS_n/A16 , CAS_n/A15, and WE_n/A14 (along with CS_n and

ACT_n) define the command and/or address being entered. See the ACT_n de-

scription in this table.

RESET_n Input Active LOW asynchronous reset: Reset is active when RESET_n is LOW, and in-

active when RESET_n is HIGH. RESET_n must be HIGH during normal operation.

RESET_n is a CMOS rail-to-rail signal with DC HIGH and LOW at 80% and 20% of

; that is, 960 mV for DC HIGH and 240 mV for DC LOW.

TEN Input Connectivity test mode: TEN is active when HIGH and inactive when LOW. TEN

must be LOW during normal operation. TEN is a CMOS rail-to-rail signal with DC

HIGH and LOW at 80% and 20% of V

(960mV for DC HIGH and 240mV for DC

LOW).

16Gb: x4, x8 TwinDie DDR4 SDRAM

Ball Assignments and Descriptions

PDF: 09005aef85fd40a1

DDR4_16Gb_x4_x8_2CS_TwinDie.pdf - Rev. D 12/16 EN

Micron Technology, Inc. reserves the right to change products or specifications without notice.

剩余20页未读，继续阅读

评论收藏

内容反馈

鲸阮

2023-07-24

手册的简洁风格和清晰的结构，使人能够快速找到需要的信息，节省了用户的时间和精力。
陌陌的日记

2023-07-24

里面提供的技术参数非常全面，给用户提供了充分的参考资料。
顾露

2023-07-24

这个手册详细介绍了美光DDR4 16GB芯片，让人对其性能和功能有了清晰的了解。
西门镜湖

2023-07-24

手册中的图文并茂的介绍方式，使得阅读起来非常直观且易于理解。
深层动力

2023-07-24

作为一份手册，它充满了实用性，对于需要购买或了解这款芯片的人来说非常有用。

ywwang1123

粉丝: 6
资源: 2

美光DDR4 16GB芯片手册

最新资源

美光DDR4 16GB芯片手册

MT40A2G4 MT40A1G8 MT40A512M16 DDR4 SDRAM 数据手册.pdf

DDR4协议及芯片手册.7z

Micron_DDR4_Spec

DDR4详细资料

DDR4 module datasheet

镁光1.5VDDR3手册1Gb_DDR3_SDRAM.pdf

JEDEC DDR4 Datasheet spec

micron_lpddr4.pdf

镁光DDR4功耗计算工具

SPD DDR4的参数

DDR4规格.pdf

海力士DDR4手册

ddr4_dram.pdf

DDR4 SDRAM UDIMM Design Specification-4_20_26R29.pdf

LPDDR4_Spec.pdf

LPDDR4说明手册

DDR3L 芯片手册

SAMSUNG DDR3 芯片手册

镁光DDR3 MT41J128M16数据手册

镁光CMOS芯片MT9V034数据手册datasheet

DDR3_to_DDR4（美光资料）.pdf

IS43-46LQ32256A-AL-LPDDR4芯片规格书.pdf

镁光MICRON EMMC存储芯片规格书

DDR4 和 LPDDR4 存储器的功能测试和验证

DDR_PHY_Interface_Specification_v4_0.pdf

华为eNSP防火墙USG6000v安装包

【基于Multisim的超外差中波调幅接收机设计】

win11-PL23XX_Prolific_DriverInstaller_v206

华为ENSP CE12800导入设备包

解决：电脑前面板耳机没声，后插孔有声，找不到Realtek高清晰音频管理器，安装realtek hd audio dIver失败

最新资源