经典的75337系列
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©2001 Fairchild Semiconductor Corporation HUF75337G3, HUF75337P3, HUF75337S3S Rev. B
HUF75337G3, HUF75337P3, HUF75337S3S
75A, 55V, 0.014 Ohm, N-Channel UltraFET
Power MOSFETs
These N-Channel power MOSFETs
are manufactured using the
innovative UltraFET® process. This
advanced process technology
achieves the lowest possible on-resistance per silicon area,
resulting in outstanding performance. This device is capable
of withstanding high energy in the avalanche mode and the
diode exhibits very low reverse recovery time and stored
charge. It was designed for use in applications where power
efficiency is important, such as switching regulators,
switching converters, motor drivers, relay drivers, low-
voltage bus switches, and power management in portable
and battery-operated products.
Formerly developmental type TA75337.
Features
• 75A, 55V
• Simulation Models
- Temperature Compensated PSPICE® and SABER™
Models
- SPICE and SABER Thermal Impedance Models
Available on the web at: www.fairchildsemi.com
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• Related Literature
- TB334, “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
Packaging
Product reliability information can be found at http://www.fairchildsemi.com/products/discrete/reliability/index.html
For severe environments, see our Automotive HUFA series.
All Fairchild semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification.
Ordering Information
PART NUMBER PACKAGE BRAND
HUF75337G3 TO-247 75337G
HUF75337P3 TO-220AB 75337P
HUF75337S3S TO-263AB 75337S
NOTE: When ordering, use the entire part number. Add the suffix T to
obtain the TO-263AB variant in tape and reel, e.g., HUF75337S3ST.
D
G
S
JEDEC STYLE TO-247 JEDEC TO-220AB
JEDEC TO-263AB
SOURCE
DRAIN
GATE
DRAIN
(TAB)
DRAIN
SOURCE
GATE
DRAIN
(FLANGE)
GATE
SOURCE
DRAIN
(FLANGE)
Data Sheet December 2001
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