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IGT60R190D1 英飞凌芯片 INFINEON 中文版规格书手册.pdf
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IGT60R190D1 英飞凌芯片 INFINEON 中文版规格书手册
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Final Data Sheet Please read the Important Notice and Warnings at the end of this document Rev. 2.0
www.infineon.com 2022-05-18
IGT60R190D1
IGT60R190D1
600V CoolGaN™ enhancement-mode Power Transistor
Features
Enhancement mode transistor – Normally OFF switch
Ultra fast switching
No reverse-recovery charge
Capable of reverse conduction
Low gate charge, low output charge
Superior commutation ruggedness
Qualified for industrial applications according to JEDEC
Standards (JESD47 and JESD22)
Benefits
Improves system efficiency
Improves power density
Enables higher operating frequency
System cost reduction savings
Reduces EMI
Applications
Industrial, telecom, datacenter SMPS based on the half-bridge topology
(half-bridge topologies for hard and soft switching such as Totem pole PFC,
high frequency LLC).
For other applications: review CoolGaN™ reliability white paper and contact
Infineon regional support
Table 1 Key Performance Parameters at T
j
= 25 °C
Table 2 Ordering Information
Parameter
Value
Unit
V
DS,max
600
V
R
DS(on),max
190
m
Ω
Q
G,typ
3.2
nC
I
D,pulse
2
3
A
Q
oss
@ 400
V
16
nC
Q
rr
0
nC
Type / Ordering Code Package Marking Related links
IGT60R190D1 PG-HSOF-8-3 60R190D1 see Appendix A
SK
1
1
G
G
SK
Gate 8
Drain drain contact
Kelvin Source 7
Source 1,2,3,4,5,6
Final Data Sheet 2 Rev. 2.0
2022-05-18
IGT60R190D1
600V CoolGaN™ enhancement
-
mode Power Transistor
Table of Contents
Features …..………………………………………………………………….……………………………………….. 1
Benefits …..…………………………………….………………………………………………………………………1
Applications ................................................................................................................................... 1
Table of Contents ........................................................................................................................... 2
1 Maximum ratings ........................................................................................................... 3
2 Thermal characteristics .................................................................................................. 4
3 Electrical characteristics ................................................................................................ 5
4 Electrical characteristics diagrams .................................................................................. 7
5 Test Circuits ................................................................................................................. 13
6 Package Outlines .......................................................................................................... 14
7 Appendix ..................................................................................................................... 15
8 Revision History ........................................................................................................... 16
Final Data Sheet 3 Rev. 2.0
2022-05-18
IGT60R190D1
600V CoolGaN™ enhancement
-
mode Power Transistor
1 Maximum ratings
at T
j
= 25 °C, unless otherwise specified. Continuous application of maximum ratings can deteriorate transistor
lifetime. For further information, contact your local Infineon sales office.
Table 3 Maximum ratings
1
All devices are 100% tested at I
DS
= 4.3 mA to assure V
DS
≥ 800 V
2
Provided as measure of robustness under abnormal operating conditions and not recommended for normal operation
3
Limits derived from product characterization, parameter not measured during production
4
Ensure that average gate drive current, I
G,avg
is ≤ 7.7 mA. Please see figure 27 for I
G,avg
, I
G,pulse
and I
G
details
5
Parameter is influenced by rel-requirements. Please contact the local Infineon Sales Office to get an assessment of your application
6
We recommend using an advanced driving technique to optimize the device performance. Please see gate drive application note for
details
Parameter Symbol Values Unit Note/Test Condition
Min. Typ. Max.
Drain Source Voltage, continuous
1
V
DS,max
- - 600 V
V
GS
= 0 V
Drain source destructive breakdown
voltage
2
V
DS,bd
800 - - V
V
GS
= 0 V, I
DS
= 4.3 mA
Drain source voltage, pulsed
2
V
DS,pulse
-
-
-
-
750
650
V
V
T
j
= 25 °C; V
GS
≤ 0 V; ≤1 hour
of total time
T
j
= 125 °C, V
GS
≤ 0 V; ≤1 hour
of total time
Switching surge voltage, pulsed
2
V
DS,surge
- - 750 V DC bus voltage = 700 V; turn
off V
DS,pulse
= 750 V; turn on
I
D,pulse
= 10 A; T
j
= 105 °C;
f ≤ 100 kHz, t ≤ 100 secs (10
million pulses)
Continuous current, drain source I
D
-
-
-
-
12
5.5
A T
C
= 25 °C;
T
C
= 125 °C;
Pulsed current, drain source
3 4
I
D,pulse
- - 23 A T
C
= 25 °C; I
G
= 9.6 mA;
See Figure 3;
Pulsed current, drain source
4 5
I
D,pulse
- - 11 A T
C
= 125 °C; I
G
= 9.6 mA;
See Figure 4;
Gate current, continuous
4 5 6
I
G,avg
- - 7.7 mA T
j
= -55 °C to 150 °C;
Gate current, pulsed
4 6
I
G,pulse
- - 770 mA T
j
= -55 °C to 150 °C;
t
PULSE
= 50 ns, f=100 kHz
Gate source voltage, continuous
6
V
GS
-10 - - V T
j
= -55 °C to 150 °C;
Gate source voltage, pulsed
6
V
GS,pulse
-25 - - V T
j
= -55 °C to 150 °C;
t
PULSE
= 50 ns, f = 100 kHz;
open drain
Power dissipation P
tot
- - 52 W
T
C
= 25 °C
Operating temperature T
j
-55 - 150 °C
Storage temperature T
stg
-55
- 150 °C Max shelf life depends on
storage conditions.
Final Data Sheet 4 Rev. 2.0
2022-05-18
IGT60R190D1
600V CoolGaN™ enhancement
-
mode Power Transistor
2 Thermal characteristics
Table 4 Thermal characteristics
Drain-source voltage slew-rate dV/dt 200 V/ns
Parameter Symbol Values Unit Note/Test Condition
Min. Typ. Max.
Thermal resistance, junction
-
case
R
thJC
- - 2.4 °C/W
Thermal resistance, junction
-
ambient
R
thJA
- - 62 °C/W Device on PCB, minimum
footprint
Thermal resistance, junction
-
ambient
for SMD version
R
thJA
- 35 45 °C/W
Device on
4
0mm*40mm*
1.5mm epoxy PCB FR4 with
6cm² (one layer, 70μm
thickness) copper area for
drain connection and
cooling. PCB is vertical
without air stream cooling.
Reflow soldering temperature
T
sold
- - 260 °C MSL1
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