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SPW24N60C3 英飞凌芯片 INFINEON 中文版规格书手册.pdf
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SPW24N60C3 英飞凌芯片 INFINEON 中文版规格书手册
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2008-02-11Rev. 2.5
Page 1
SPW24N60C3
Cool MOS™ Power Transistor
V
DS
@ T
jmax
650 V
R
DS(on)
0.16 Ω
I
D
24.3 A
Feature
• New revolutionary high voltage technology
• Ultra low gate charge
• Periodic avalanche rated
• Extreme dv/dt rated
• Ultra low effective capacitances
• Improved transconductance
PG-TO247
Type Package Ordering Code
SPW24N60C3 PG-TO247 Q67040-S4640
Marking
24N60C3
Maximum Ratings
Parameter
Symbol Value Unit
Continuous drain current
T
C
= 25 °C
T
C
= 100 °C
I
D
24.3
15.4
A
Pulsed drain current, t
p
limited by T
j
ma
x
I
D
p
uls
72.9
Avalanche energy, single pulse
I
D
= 10 A, V
DD
= 50 V
E
AS
780 mJ
Avalanche energy, repetitive t
AR
limited by T
jmax
1
)
I
D
= 24.3 A, V
DD
= 50 V
E
AR
1
Avalanche current, repetitive t
AR
limited by T
j
ma
x
I
AR
24.3 A
Gate source voltage static V
GS
±20
V
Gate source voltage AC (f >1Hz)
V
GS
±30
Power dissipation, T
C
= 25°C P
tot
240 W
Operating and storage temperature T
j
, T
st
g
-55... +150
°C
Reverse diode dv/dt dv/dt 15 V/ns
4)
Please note the new package dimensions arccording to PCN 2009-134-A
2008-02-11Rev. 2.5
Page 2
SPW24N60C3
Maximum Ratings
Parameter
Symbol Value Unit
Drain Source voltage slope
V
DS
= 480 , I
D
= 24.3 , T
j
= 125 °C
dv/dt 50 V/ns
Thermal Characteristics
Parameter
Symbol Values Unit
min. typ. max.
Thermal resistance, junction - case
R
thJC
- - 0.52 K/W
Thermal resistance, junction - ambient, leaded
R
thJA
- - 62
Soldering temperature, wavesoldering
1.6 mm (0.063 in.) from case for 10s
T
sold
- - 260 °C
Electrical Characteristics, at Tj=25°C unless otherwise specified
Parameter
Symbol Conditions Values Unit
min. typ. max.
Drain-source breakdown voltage
V
(BR)DSS
V
GS
=0V, I
D
=0.25mA 600 - - V
Drain-Source avalanche
breakdown voltage
V
(BR)DS
V
GS
=0V, I
D
=24.3A - 700 -
Gate threshold voltage V
GS(th)
I
D
=1200µΑ, V
GS
=V
DS
2.1 3 3.9
Zero gate voltage drain current I
DSS
V
DS
=600V, V
GS
=0V,
T
j
=25°C,
T
j
=150°C
-
-
0.1
-
1
100
µA
Gate-source leakage current I
GSS
V
GS
=20, V
DS
=0V - - 100 nA
Drain-source on-state resistance R
DS(on)
V
GS
=10V, I
D
=15.4A,
T
j
=25°C
T
j
=150°C
-
-
0.14
0.34
0.16
-
Ω
Gate input resistance
R
G
f=1MHz, open Drain - 0.66 -
Please note the new package dimensions arccording to PCN 2009-134-A
2008-02-11Rev. 2.5
Page 3
SPW24N60C3
Electrical Characteristics , at T
j
= 25 °C, unless otherwise specified
Parameter
Symbol Conditions Values Unit
min. typ. max.
Transconductance g
fs
V
DS
≥2*I
D
*R
DS(on)max
,
I
D
=15.4A
- 21.5 - S
Input capacitance C
iss
V
GS
=0V, V
DS
=25V,
f=1MHz
- 3000 - pF
Output capacitance C
oss
- 1000 -
Reverse transfer capacitance C
rss
- 60 -
Effective output capacitance,
2)
energy related
C
o(er)
V
GS
=0V,
V
DS
=0V to 480V
- 141 - pF
Effective output capacitance,
3)
time related
C
o(tr)
- 224 -
Turn-on delay time t
d(on)
V
DD
=380V, V
GS
=0/10V,
I
D
=24.3A, R
G
=3.3
- 13 - ns
Rise time t
r
V
DD
=380V, V
GS
=0/10V,
I
D
=24.3A, R
G
=3.3Ω
- 21 -
Turn-off delay time t
d(off)
- 140 -
Fall time t
f
- 14 -
Gate Charge Characteristics
Gate to source charge
Q
gs
V
DD
=480, I
D
=24.3A - 12.7 - nC
Gate to drain charge Q
gd
- 45.8 -
Gate charge total Q
g
V
DD
=480V, I
D
=24.3A,
V
GS
=0 to 10V
- 104.9 135
Gate plateau voltage V
(plateau)
V
DD
=480V, I
D
=24.3A - 5 - V
1
Repetitve avalanche causes additional power losses that can be calculated as P
AV
=E
AR
*f.
2
C
o(er)
is a fixed capacitance that gives the same stored energy as C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
3
C
o(tr)
is a fixed capacitance that gives the same charging time as C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
4
I
SD
<=I
D
, di/dt<=200A/us, V
DClink
=400V, V
peak
<V
BR, DSS
, T
j
<T
j,max
.
Identical low-side and high-side switch.
Please note the new package dimensions arccording to PCN 2009-134-A
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