BSC118N10NS G INFINEON 英飞凌芯片 中文版规格书手册.pdf
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BSC118N10NS G
OptiMOS™2 Power-Transistor
Features
• N-channel, normal level
• Excellent gate charge x R
DS(on)
product (FOM)
• Very low on-resistance R
DS(on)
• 150 °C operating temperature
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC
1)
for target application
• Ideal for high-frequency switching and synchronous rectification
• Halogen-free according to IEC61249-2-21
Maximum ratings, at T
j
=25 °C, unless otherwise specified
Parameter Symbol Conditions Unit
Continuous drain current
I
D
T
C
=25 °C
71 A
T
C
=100 °C
44
T
A
=25 °C,
R
thJA
=45 K/W
2)
11
Pulsed drain current
3)
I
D,pulse
T
C
=25 °C
280
Avalanche energy, single pulse
E
AS
I
D
=50 A, R
GS
=25 Ω
155 mJ
Gate source voltage
V
GS
±20 V
Power dissipation
P
tot
T
C
=25 °C
114 W
Operating and storage temperature
T
j
, T
stg
-55 ... 150 °C
IEC climatic category; DIN IEC 68-1 55/150/56
Value
1)
J-STD20 and JESD22
V
DS
100 V
R
DS(on),max
11.8
mΩ
I
D
71 A
Product Summary
Type Package Marking
BSC118N10NS G PG-TDSON-8 118N10NS
PG-TDSON-8
Rev. 1.08 page 1 2009-11-03
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