Features
• Fast switching MOSFET for SMPS
• Optimized technology for DC/DC converters
• Qualified according to JEDEC
1)
for target applications
• Excellent gate charge x R
DS(on)
product (FOM)
• Very low on-resistance R
DS(on)
• Superior thermal resistance
• Avalanche rated
• Pb-free plating; RoHS compliant
• Halogen-free according to IEC61249-2-21
Maximum ratings, at T
j
=25 °C, unless otherwise specified
Parameter Symbol Conditions Unit
Continuous drain current
V
GS
=10 V, T
A
=25 °C,
R
thJA
=50 K/W
2)
Pulsed drain current
3)
I
D,pulse
T
C
=25 °C
372
Avalanche current, single pulse
4)
I
AS
T
C
=25 °C
50
Avalanche energy, single pulse
E
AS
I
D
=40 A, R
GS
=25 W
50 mJ
Reverse diode dv/dt dv /dt
I
D
=50 A, V
DS
=24 V,
di/dt =200 A/µs,
T
j,max
=150 °C
6 kV/µs
Gate source voltage
Rev. 2.1 page 1 2013-05-21