BSC020N03MS G
Opti
MOS
™3 M-Series Power-MOSFET
Features
• Optimized for 5V driver application (Notebook, VGA, POL)
• Low FOM
SW
for High Frequency SMPS
• 100% Avalanche tested
• N-channel
• Very low on-resistance R
DS(on)
@ V
GS
=4.5 V
• Excellent gate charge x R
DS(on)
product (FOM)
• Qualified according to JEDEC
1)
for target applications
• Superior thermal resistance
• Pb-free plating; RoHS compliant
• Halogen-free according to IEC61249-2-21
Maximum ratings, at T
j
=25 °C, unless otherwise specified
Parameter Symbol Conditions Unit
Continuous drain current
I
D
V
GS
=10 V, T
C
=25 °C
100 A
V
GS
=10 V, T
C
=100 °C
100
V
GS
=4.5 V, T
C
=25 °C
100
V
GS
=4.5 V,
T
C
=100 °C
100
V
GS
=4.5 V, T
A
=25 °C,
R
thJA
=50 K/W
2)
25
Pulsed drain current
3)
I
D,pulse
T
C
=25 °C
400
Avalanche current, single pulse
4)
I
AS
T
C
=25 °C
50
Avalanche energy, single pulse
E
AS
I
D
=50 A, R
GS
=25 Ω
200 mJ
Gate source voltage
V
GS
±20 V
Value
1)
J-STD20 and JESD22
PG-TDSON-8
Type Package Marking
BSC020N03MS G PG-TDSON-8 020N03MS
V
DS
30 V
R
DS(on),max
V
GS
=10 V 2
mΩ
V
GS
=4.5 V 2.5
I
D
100 A
Product Summary
Rev.1.16 page 1 2009-10-22
剩余9页未读，继续阅读
资源评论
