IRF9530N INFINEON 英飞凌芯片 中文版规格书手册.pdf
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IRF9530NPbF
HEXFET
®
Power MOSFET
PD - 94980
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power MOSFETs
are well known for, provides the designer with an extremely
efficient and reliable device for use in a wide variety of
applications.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 watts. The low thermal
resistance and low package cost of the TO-220 contribute
to its wide acceptance throughout the industry.
Parameter Max. Units
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ -10V -14
I
D
@ T
C
= 100°C Continuous Drain Current, V
GS
@ -10V -10 A
I
DM
Pulsed Drain Current -56
P
D
@T
C
= 25°C Power Dissipation 79 W
Linear Derating Factor 0.53 W/°C
V
GS
Gate-to-Source Voltage ± 20 V
E
AS
Single Pulse Avalanche Energy 250 mJ
I
AR
Avalanche Current -8.4 A
E
AR
Repetitive Avalanche Energy 7.9 mJ
dv/dt Peak Diode Recovery dv/dt -5.0 V/ns
T
J
Operating Junction and -55 to + 175
T
STG
Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
°C
Mounting torque, 6-32 or M3 screw 10 lbfin (1.1Nm)
Absolute Maximum Ratings
Parameter Typ. Max. Units
R
θJC
Junction-to-Case 1.9
R
θCS
Case-to-Sink, Flat, Greased Surface 0.50 °C/W
R
θJA
Junction-to-Ambient 62
Thermal Resistance
V
DSS
= -100V
R
DS(on)
= 0.20Ω
I
D
= -14A
T
O
-22
0
AB
l Advanced Process Technology
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
l P-Channel
l Fully Avalanche Rated
Description
02/04/04
S
D
G
l Lead-Free
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