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IPTC014N10NM5 INFINEON 英飞凌芯片 中文版规格书手册.pdf
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IPTC014N10NM5 INFINEON 英飞凌芯片 中文版规格书手册
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1
IPTC014N10NM5
Rev.2.0,2022-05-24Final Data Sheet
1
8
9
16
8
1
9
16
PG-HDSOP-16
Drain
Pin 9-16, Tab
Gate
Pin 8
Source
Pin 1-7
MOSFET
OptiMOS
TM
5Power-Transistor,100V
Features
•N-channel
•Verylowon-resistanceR
DS(on)
•Superiorthermalresistance
•100%avalanchetested
•Pb-freeleadplating;RoHScompliant
•Halogen-freeaccordingtoIEC61249-2-21
Productvalidation
FullyqualifiedaccordingtoJEDECforIndustrialApplications
Table1KeyPerformanceParameters
Parameter Value Unit
V
DS
100 V
R
DS(on),max
1.4 mΩ
I
D
365 A
Q
oss
213 nC
Q
G
168 nC
Type/OrderingCode Package Marking RelatedLinks
IPTC014N10NM5 PG-HDSOP-16 14N10NM5 -
2
OptiMOS
TM
5Power-Transistor,100V
IPTC014N10NM5
Rev.2.0,2022-05-24Final Data Sheet
TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
3
OptiMOS
TM
5Power-Transistor,100V
IPTC014N10NM5
Rev.2.0,2022-05-24Final Data Sheet
1Maximumratings
atT
A
=25°C,unlessotherwisespecified
Table2Maximumratings
Values
Min. Typ. Max.
Parameter Symbol Unit Note/TestCondition
Continuous drain current
1)
I
D
-
-
-
-
-
-
-
-
365
258
216
37
A
V
GS
=10V,T
C
=25°C
V
GS
=10V,T
C
=100°C
V
GS
=6V,T
C
=100°C
V
GS
=10V,T
A
=25°C,R
thJA
=40°C/W
2)
Pulsed drain current
3)
I
D,pulse
- - 1460 A T
A
=25°C
Avalanche energy, single pulse
4)
E
AS
- - 775 mJ I
D
=150A,R
GS
=25Ω
Gate source voltage V
GS
-20 - 20 V -
Power dissipation P
tot
-
-
-
-
375
3.8
W
T
C
=25°C
T
A
=25°C,R
thJA
=40°C/W
2)
Operating and storage temperature T
j
,T
stg
-55 - 175 °C
IEC climatic category; DIN IEC 68-1:
55/175/56
2Thermalcharacteristics
Table3Thermalcharacteristics
Values
Min. Typ. Max.
Parameter Symbol Unit Note/TestCondition
Thermal resistance, junction - case R
thJC
- 0.2 0.4 °C/W -
Thermal resistance, junction - ambient,
6 cm² cooling area
2)
R
thJA
- - 40 °C/W -
Thermal resistance, junction - ambient,
minimal footprint
R
thJA
- - 62 °C/W -
1)
Rating refers to the product only with datasheet specified absolute maximum values, maintaining case temperature
as specified. For other case temperatures please refer to Diagram 2. De-rating will be required based on the actual
environmental conditions.
2)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm
2
(one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
3)
See Diagram 3 for more detailed information
4)
See Diagram 13 for more detailed information
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