IQE050N08NM5CGSC 英飞凌芯片规格书手册
本规格书手册介绍了 IQE050N08NM5CGSC 英飞凌芯片的详细规格和特性，该芯片是一款 N-Channel Power Transistor，工作电压为 80V，具有非常低的导通电阻 RDS(on) 和优异的热阻抗。
主要特性
* Optimized for synchronous rectification
* N-Channel, normal level
* Very low on-resistance RDS(on)
* Superior thermal resistance
* 100% avalanche tested
* Pb-free lead plating; RoHS compliant
* Halogen-free according to IEC61249-2-21
应用场景
* Synchronous rectification
* Power supplies
* DC-DC converters
* Motor control
* Industrial applications
规格参数
* Maximum ratings:
+ Drain-source voltage: 80V
+ Gate-source voltage: ±20V
+ Drain current: 99A
* Thermal characteristics:
+ Junction temperature: -55°C to 150°C
+ Storage temperature: -55°C to 150°C
* Electrical characteristics:
+ On-state resistance: 5.0mΩ
+ Gate-source threshold voltage: 2.5V
+ Drain-source leakage current: 100nA
包装信息
* Package: PG-WHTFN-9
* Marking: IQE050N08NM5CGSC
* Package outline: TO-263-7
相关链接
* Infineon Webseite: [www.infineon.com](http://www.infineon.com)
* IQE050N08NM5CGSC Datasheet: [www.infineon.com/IQE050N08NM5CGSC](http://www.infineon.com/IQE050N08NM5CGSC)
本规格书手册提供了 IQE050N08NM5CGSC 英飞凌芯片的详细规格和特性，为工程师和设计师提供了宝贵的参考资料。
